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    Memory cell with radial barrier
    1.
    发明授权
    Memory cell with radial barrier 有权
    具有径向屏障的记忆体

    公开(公告)号：US08440330B2

    公开(公告)日：2013-05-14

    申请号：US13278431

    申请日：2011-10-21

    申请人： Paul E. Anderson ,  Song S. Xue

    发明人： Paul E. Anderson ,  Song S. Xue

    IPC分类号： G11B5/39 ,  H01F10/08 ,  H01L43/08 ,  H01L43/12

    CPC分类号： H01L43/08 ,  H01L43/12 ,  Y10T428/1114 ,  Y10T428/1143

    摘要： Magnetic tunnel junction cells and methods of making magnetic tunnel junction cells that include a radially protective layer extending proximate at least the ferromagnetic free layer of the cell. The radially protective layer can be specifically chosen in thickness, deposition method, material composition, and/or extent along the cell layers to enhance the effective magnetic properties of the free layer, including the effective coercivity, effective magnetic anisotropy, effective dispersion in magnetic moment, or effective spin polarization.

    摘要翻译： 磁性隧道结电池和制造磁性隧道结电池的方法，其包括在电池的至少铁磁性自由层附近延伸的径向保护层。 径向保护层可以沿着电池层的厚度，沉积方法，材料组成和/或程度具体选择，以增强自由层的有效磁性，包括有效的矫顽力，有效的磁各向异性，磁矩中的有效分散 ，或有效的自旋极化。

    MEMORY CELL WITH RADIAL BARRIER
    2.
    发明申请
    MEMORY CELL WITH RADIAL BARRIER 有权
    带有径向障碍物的记忆体

    公开(公告)号：US20120061783A1

    公开(公告)日：2012-03-15

    申请号：US13278431

    申请日：2011-10-21

    申请人： Paul E. Anderson ,  Song S. Xue

    发明人： Paul E. Anderson ,  Song S. Xue

    IPC分类号： H01L29/82

    CPC分类号： H01L43/08 ,  H01L43/12 ,  Y10T428/1114 ,  Y10T428/1143

    摘要： Magnetic tunnel junction cells and methods of making magnetic tunnel junction cells that include a radially protective layer extending proximate at least the ferromagnetic free layer of the cell. The radially protective layer can be specifically chosen in thickness, deposition method, material composition, and/or extent along the cell layers to enhance the effective magnetic properties of the free layer, including the effective coercivity, effective magnetic anisotropy, effective dispersion in magnetic moment, or effective spin polarization.

    摘要翻译： 磁性隧道结电池和制造磁性隧道结电池的方法，其包括在电池的至少铁磁性自由层附近延伸的径向保护层。 径向保护层可以沿着电池层的厚度，沉积方法，材料组成和/或程度具体选择，以增强自由层的有效磁性，包括有效的矫顽力，有效的磁各向异性，磁矩中的有效分散 ，或有效的自旋极化。

    Spin-Torque Bit Cell With Unpinned Reference Layer and Unidirectional Write Current
    3.
    发明申请
    Spin-Torque Bit Cell With Unpinned Reference Layer and Unidirectional Write Current 有权
    具有未引脚参考层和单向写入电流的自旋转矩位单元

    公开(公告)号：US20110205788A1

    公开(公告)日：2011-08-25

    申请号：US13100953

    申请日：2011-05-04

    申请人： Daniel Seymour Reed ,  Yong Lu ,  Song S. Xue ,  Dimitar V. Dimitrov ,  Paul E. Anderson

    发明人： Daniel Seymour Reed ,  Yong Lu ,  Song S. Xue ,  Dimitar V. Dimitrov ,  Paul E. Anderson

    IPC分类号： G11C11/15

    CPC分类号： H01F10/329 ,  B82Y25/00 ,  G01R33/098 ,  G01R33/1284 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  H01F10/3254

    摘要： Method and apparatus for using a uni-directional write current to store different logic states in a non-volatile memory cell, such as a modified STRAM cell. In some embodiments, the memory cell has an unpinned ferromagnetic reference layer adjacent a cladded conductor, a ferromagnetic storage layer and a tunneling barrier between the reference layer and the storage layer. Passage of a current along the cladded conductor induces a selected magnetic orientation in the reference layer, which is transferred through the tunneling barrier for storage by the storage layer. Further, the orientation of the applying step is provided by a cladding layer adjacent a conductor along which a current is passed and the current induces a magnetic field in the cladding layer of the selected magnetic orientation.

    摘要翻译： 用于使用单向写入电流来存储非易失性存储器单元（诸如修改的STRAM单元）中的不同逻辑状态的方法和装置。 在一些实施例中，存储器单元具有与包层导体相邻的未固定的铁磁参考层，铁磁存储层和参考层与存储层之间的隧道势垒。 沿着包层导体的电流的通过在参考层中引入选定的磁取向，该参考层通过隧道势垒传递，以通过存储层进行存储。 此外，施加步骤的取向由邻近导体的包层提供，电流通过该导体，并且电流在所选择的磁方向的包层中感应出磁场。

    Spin-torque bit cell with unpinned reference layer and unidirectional write current
    4.
    发明授权
    Spin-torque bit cell with unpinned reference layer and unidirectional write current 有权
    具有未固定参考层和单向写入电流的自旋转矩位单元

    公开(公告)号：US07940592B2

    公开(公告)日：2011-05-10

    申请号：US12326314

    申请日：2008-12-02

    申请人： Daniel Seymour Reed ,  Yon Lu ,  Song S. Xue ,  Dimitar V. Dimitrov ,  Paul E. Anderson

    发明人： Daniel Seymour Reed ,  Yon Lu ,  Song S. Xue ,  Dimitar V. Dimitrov ,  Paul E. Anderson

    IPC分类号： G11C7/00

    CPC分类号： H01F10/329 ,  B82Y25/00 ,  G01R33/098 ,  G01R33/1284 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  H01F10/3254

    摘要： Method and apparatus for using a uni-directional write current to store different logic states in a non-volatile memory cell, such as a modified STRAM cell. In some embodiments, the memory cell has an unpinned ferromagnetic reference layer adjacent a cladded conductor, a ferromagnetic storage layer and a tunneling barrier between the reference layer and the storage layer. Passage of a current along the cladded conductor induces a selected magnetic orientation in the reference layer, which is transferred through the tunneling barrier for storage by the storage layer. Further, the orientation of the applying step is provided by a cladding layer adjacent a conductor along which a current is passed and the current induces a magnetic field in the cladding layer of the selected magnetic orientation.

    摘要翻译： 用于使用单向写入电流来存储非易失性存储器单元（诸如修改的STRAM单元）中的不同逻辑状态的方法和装置。 在一些实施例中，存储器单元具有与包层导体相邻的未固定的铁磁参考层，铁磁存储层和参考层与存储层之间的隧道势垒。 沿着包层导体的电流的通过在参考层中引入选定的磁取向，该参考层通过隧道势垒传递，以通过存储层进行存储。 此外，施加步骤的取向由邻近导体的包层提供，电流通过该导体，并且电流在所选择的磁方向的包层中感应出磁场。

    Reset device for biasing element in a magnetic sensor
    6.
    发明授权
    Reset device for biasing element in a magnetic sensor 有权
    用于磁传感器偏置元件的复位装置

    公开(公告)号：US07672091B2

    公开(公告)日：2010-03-02

    申请号：US11376014

    申请日：2006-03-15

    申请人： Song S. Xue ,  Paul E. Anderson ,  Kaizhong Gao ,  Kristin Duxstad

    发明人： Song S. Xue ,  Paul E. Anderson ,  Kaizhong Gao ,  Kristin Duxstad

    IPC分类号： G11B5/39

    CPC分类号： G11B5/3903 ,  G11B2005/0018

    摘要： A device resets a biasing magnetization of a biasing element in a magnetic sensor. The device includes a magnetic structure that is magnetically coupled to the biasing element. A conductive element is disposed around at least a portion of the magnetic structure. When a current is passed through the conductive element, a magnetic field is produced that resets the biasing magnetization of the biasing element.

    摘要翻译： 器件复位磁传感器中的偏置元件的偏置磁化强度。 该装置包括磁耦合到偏压元件的磁性结构。 导电元件围绕磁性结构的至少一部分设置。 当电流通过导电元件时，产生磁场，该磁场使偏置元件的偏置磁化复位。

    SPIN-TORQUE MEMORY WITH UNIDIRECTIONAL WRITE SCHEME
    7.
    发明申请
    SPIN-TORQUE MEMORY WITH UNIDIRECTIONAL WRITE SCHEME 失效
    具有单向写入方案的旋转扭矩记忆

    公开(公告)号：US20090262638A1

    公开(公告)日：2009-10-22

    申请号：US12106382

    申请日：2008-04-21

    申请人： Haiwen Xi ,  Dexin Wang ,  Dimitar V. Dimitrov ,  Paul E. Anderson ,  Song S. Xue

    发明人： Haiwen Xi ,  Dexin Wang ,  Dimitar V. Dimitrov ,  Paul E. Anderson ,  Song S. Xue

    IPC分类号： G11B9/00

    CPC分类号： G11C11/16 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/1284 ,  G06T11/001 ,  G11C11/161 ,  G11C11/1675

    摘要： Spin torque magnetic memory elements that have a pinned layer, two free layers, and a current-blocking insulating layer proximate to at least one of the free layers. The resistive state (e.g., low resistance or high resistance) of the memory elements is altered by passing electric current through the element in one direction. In other words, to change from a low resistance to a high resistance, the direction of electric current is the same as to change from a high resistance to a low resistance. The elements have a unidirectional write scheme.

    摘要翻译： 具有钉扎层，两个自由层和靠近至少一个自由层的电流阻挡绝缘层的自旋扭矩磁存储元件。 存储元件的电阻状态（例如，低电阻或高电阻）通过在一个方向上通过元件的电流来改变。 换句话说，为了从低电阻变为高电阻，电流的方向与从高电阻变为低电阻相同。 这些元素具有单向写入方案。

    Method of forming a feature having a high aspect ratio
    8.
    发明授权
    Method of forming a feature having a high aspect ratio 有权

    公开(公告)号：US07086138B2

    公开(公告)日：2006-08-08

    申请号：US09972699

    申请日：2001-10-05

    申请人： Paul E. Anderson

    发明人： Paul E. Anderson

    IPC分类号： G11B5/127 ,  H05K3/10

    CPC分类号： G11B5/3967 ,  G11B5/3116 ,  G11B5/3163 ,  Y10T29/49032 ,  Y10T29/49041 ,  Y10T29/49043

    摘要： A method for forming high aspect ratio metallization on a wafer is implemented in the formation of a disc drive recording head. The process involves patterning photoresist where metal is to be later deposited, milling around the photoresist perimeter, depositing insulating material in the milled region, around and over the photoresist, then dissolving the photoresist to be replaced with metal. The process features the ability to desirably increase the aspect ratio of height to width of a metallization on a wafer. An improved aspect ratio can be utilized to improve the quality of a write pole in a recording head, effectively increasing its achievable recording density.

    Remediation of fluorine and chlorine by-products in energetic formulations
    9.
    发明授权
    Remediation of fluorine and chlorine by-products in energetic formulations 有权
    在精力配方中氟和氯副产物的修复

    公开(公告)号：US08480825B1

    公开(公告)日：2013-07-09

    申请号：US13227807

    申请日：2011-09-08

    申请人： Paul E. Anderson

    发明人： Paul E. Anderson

    IPC分类号： D03D23/00

    CPC分类号： C06B23/02

    摘要： A method of in-situ remediation of chlorinated and fluorinated reaction by-products resulting from energetic detonations and/or burning of energetic mixtures comprising adding a quantity of Calcium disilicide (CaSi2), Calcium silicide (CaSi), Magnesium disilicide (MgSi2), Magnesium silicide, or Aluminum Calcium (Al2Ca) compounds to the energetic mixture prior to its detonation and/or burning. Advantageously, the in-situ production of more inert by-products results from this addition thereby preventing the formation of any less-desirable by-products.

    摘要翻译： 一种由能量爆炸和/或能量混合物燃烧产生的氯化和氟化反应副产物的原位修复方法，包括加入一量二硅酸钙（CaSi 2），硅化钙（CaSi），二硅化镁（MgSi 2），镁 硅化物或铝钙（Al2Ca）化合物在其爆炸和/或燃烧之前的能量混合物。 有利的是，由此添加导致更惰性的副产物的原位生产，从而防止形成任何不理想的副产物。

    DAMASCENE PROCESS USING PVD SPUTTER CARBON FILM AS CMP STOP LAYER FOR FORMING A MAGNETIC RECORDING HEAD
    10.
    发明申请
    DAMASCENE PROCESS USING PVD SPUTTER CARBON FILM AS CMP STOP LAYER FOR FORMING A MAGNETIC RECORDING HEAD 有权
    使用PVD溅射碳膜作为CMP停止层形成磁记录头的吸塑工艺

    公开(公告)号：US20120111826A1

    公开(公告)日：2012-05-10

    申请号：US12943835

    申请日：2010-11-10

    申请人： YANFENG CHEN ,  Yunjun Tang ,  Yana Qian ,  Ming M. Yang ,  Yunfei Li ,  Paul E. Anderson

    发明人： YANFENG CHEN ,  Yunjun Tang ,  Yana Qian ,  Ming M. Yang ,  Yunfei Li ,  Paul E. Anderson

    IPC分类号： G11B5/127

    CPC分类号： G11B5/3116 ,  G11B5/3163

    摘要： Damascene processes using physical vapor deposition (PVD) sputter carbon film as a chemical mechanical planarization (CMP) stop layer for forming a magnetic recording head are provided. In one embodiment, one such process includes providing an insulator, removing a portion of the insulator to form a trench within the insulator, depositing a carbon material on first portions of the insulator using a physical vapor deposition process, disposing at least one ferromagnetic material on second portions of the insulator to form a pole including a portion of the ferromagnetic material within the trench, and performing a chemical mechanical planarization on the at least one ferromagnetic material using at least a portion of the carbon material as a stop for the chemical mechanical planarization.

    摘要翻译： 提供使用物理气相沉积（PVD）溅射碳膜作为用于形成磁记录头的化学机械平面化（CMP）停止层的镶嵌工艺。 在一个实施例中，一种这样的方法包括提供绝缘体，去除绝缘体的一部分以在绝缘体内形成沟槽，使用物理气相沉积工艺在绝缘体的第一部分上沉积碳材料，将至少一种铁磁材料放置在 所述绝缘体的第二部分形成包括所述沟槽内的所述铁磁材料的一部分的极，以及使用所述碳材料的至少一部分作为所述化学机械平面化的停止层，对所述至少一种铁磁材料进行化学机械平坦化 。