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1.发明授权Method of self-aligning an oxide aperture with an annular intra-cavity contact in a long wavelength VCSEL 有权在长波长VCSEL中使氧化物孔径与环形腔内接触自对准的方法公开(公告)号：US06750071B2
公开(公告)日：2004-06-15
申请号：US10613652
申请日：2003-07-03
IPC分类号： H01L2100
CPC分类号： H01S5/18341 , H01S5/0421 , H01S5/0425 , H01S5/18311 , H01S5/18358 , H01S5/18369 , H01S5/2081 , H01S2301/166
摘要： A method of forming a vertical cavity surface emitting laser (100, 600, 900) includes process steps for self-aligning the p-type ohmic contact (118, 518, 932), an oxide current aperture (122, 926a), and a central puck of re-phase material (560a, 936) around the optical axis of the laser.
摘要翻译： 形成垂直腔表面发射激光器（100,600,900）的方法包括用于自对准p型欧姆接触（118,518,932），氧化物电流孔径（122,926a）和 围绕激光光轴的再相材料（560a，936）的中心圆盘。
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公开(公告)号：US06898215B2
公开(公告)日：2005-05-24
申请号：US10122707
申请日：2002-04-11
CPC分类号： B82Y20/00 , G02B6/4201 , G02B6/4202 , G02B6/4225 , G02B6/4237 , G02B6/424 , G02B6/4245 , G02B6/4263 , G02B6/4286 , H01L24/24 , H01S5/0208 , H01S5/02284 , H01S5/0421 , H01S5/0425 , H01S5/18311 , H01S5/18333 , H01S5/18341 , H01S5/18369 , H01S5/305 , H01S5/3054 , H01S5/32366 , H01S5/34306 , H01S2301/166 , H01S2301/176
摘要： Selectively oxidized vertical cavity lasers emitting at about 1290 nm using InGaAsN quantum wells that operate continuous wave below, at and above room temperature are reported. The lasers employ a semi-insulating GaAs substrate for reduced capacitance, high quality, low resistivity AlGaAs DBR mirror structures, and a strained active region based on InGaAsN. In addition, the design of the VCSEL reduces free carrier absorption of 1.3 μm light in the p-type materials by placing relatively higher p-type dopant concentrations near standing wave nulls.
摘要翻译： 报道了使用InGaAsN量子阱在大约1290nm发射的选择性氧化的垂直腔激光器，其在室温以下处于连续波。 激光器采用半绝缘GaAs衬底，用于降低电容，高质量，低电阻率AlGaAs DBR镜结构，以及基于InGaAsN的应变有源区。 此外，VCSEL的设计通过在驻波零点附近放置相对较高的p型掺杂剂浓度来减少p型材料中1.3μm光的自由载流子吸收。
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公开(公告)号：US06810065B1
公开(公告)日：2004-10-26
申请号：US09996009
申请日：2001-11-28
申请人： Ryan Likeke Naone
发明人： Ryan Likeke Naone
IPC分类号： H01S5183
CPC分类号： H01S5/18311 , H01S5/02284 , H01S5/0427 , H01S5/0683 , H01S5/18361 , H01S5/3054 , H01S5/3095 , H01S5/32366
摘要： An optoelectronic device having one or more DBR mirrors having a low voltage drop across the mirror layers and a high reflectivity for emission at a nominal wavelength of 1300 nm below, at and above room temperature. The low resistance DBR may be used as a top output mirror of a tunnel junction VCSEL that reduces resistance and optical losses by reducing the amount of p-type material within the device.
摘要翻译： 具有一个或多个DBR反射镜的光电子器件具有跨镜面层的低电压降，并且在室温以下或室温以上1300nm的额定波长处发射高反射率。 低电阻DBR可以用作隧道结VCSEL的顶部输出镜，其通过减少器件内的p型材料的量来降低电阻和光学损耗。
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公开(公告)号：US06720585B1
公开(公告)日：2004-04-13
申请号：US10044358
申请日：2002-01-11
IPC分类号： H01L3300
CPC分类号： H01L33/105 , H01S5/02284 , H01S5/02461 , H01S5/18308 , H01S5/18311 , H01S5/18333 , H01S5/18341 , H01S5/2063 , H01S2301/166
摘要： A low thermal impedance optoelectronic device includes an optical cavity adjacent a low thermal impedance DBR that provides improved heat dissipation and temperature performance. The thermal impedance of the DBR may be reduced by increasing the relative or absolute thickness of a layer of high thermal conductivity material relative to a layer of low thermal conductivity material for at least a portion of the mirror periods. The thermal impedance may also be reduced by increasing the distance between phonon scattering surfaces by increasing the thickness of the high thermal conductivity layer, the low thermal conductivity layer or both.
摘要翻译： 低热阻抗光电子器件包括邻近低热阻抗DBR的光学腔，其提供改善的散热和温度性能。 通过在镜面周期的至少一部分相对于低热导率材料层增加高导热材料层的相对或绝对厚度，可以减小DBR的热阻抗。 也可以通过增加高导热层，低热导率层或两者的厚度来增加声子散射表面之间的距离来减小热阻抗。
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公开(公告)号：US07020172B2
公开(公告)日：2006-03-28
申请号：US10842617
申请日：2004-05-10
IPC分类号： H01S5/00
CPC分类号： B82Y20/00 , G02B6/4201 , G02B6/4202 , G02B6/4225 , G02B6/4237 , G02B6/424 , G02B6/4245 , G02B6/4263 , G02B6/4286 , H01L24/24 , H01S5/0208 , H01S5/02284 , H01S5/0421 , H01S5/0425 , H01S5/18311 , H01S5/18333 , H01S5/18341 , H01S5/18369 , H01S5/305 , H01S5/3054 , H01S5/32366 , H01S5/34306 , H01S2301/166 , H01S2301/176
摘要： Selectively oxidized vertical cavity lasers emitting at about 1290 nm using InGaAsN quantum wells that operate continuous wave below, at and above room temperature are reported. The lasers employ a semi-insulating GaAs substrate for reduced capacitance, high quality, low resistivity AlGaAs DBR mirror structures, and a strained active region based on InGaAsN. In addition, the design of the VCSEL reduces free carrier absorption of 1.3 μm light in the p-type materials by placing relatively higher p-type dopant concentrations near standing wave nulls.
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6.发明授权Method of self-aligning an oxide aperture with an annular intra-cavity contact in a long wavelength VCSEL 失效在长波长VCSEL中使氧化物孔径与环形腔内接触自对准的方法公开(公告)号：US06916672B2
公开(公告)日：2005-07-12
申请号：US10811624
申请日：2004-03-29
CPC分类号： H01S5/18341 , H01S5/0421 , H01S5/0425 , H01S5/18311 , H01S5/18358 , H01S5/18369 , H01S5/2081 , H01S2301/166
摘要： A method of forming a vertical cavity surface emitting laser (100, 600, 900) includes process steps for self-aligning the p-type ohmic contact (118, 518, 932), an oxide current aperture (122, 926a), and a central puck of re-phase material (560a, 936) around the optical axis of the laser.
摘要翻译： 形成垂直腔表面发射激光器（100,600,900）的方法包括用于自对准p型欧姆接触（118,518,932），氧化物电流孔径（122,926a）和 围绕激光的光轴的再相材料（560a，936）的中心圆盘。
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