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12 条记录 (耗时 0.015 秒)

    Hybrid vertical cavity laser with buried interface
    3.
    发明授权
    Hybrid vertical cavity laser with buried interface 有权
    混合垂直腔激光器具有埋入界面

    公开(公告)号：US06618414B1

    公开(公告)日：2003-09-09

    申请号：US10105473

    申请日：2002-03-25

    申请人： John Wasserbauer ,  Leo M. F. Chirovsky

    发明人： John Wasserbauer ,  Leo M. F. Chirovsky

    IPC分类号： H01S308

    CPC分类号： H01S5/18358 ,  H01S5/02284 ,  H01S5/18308 ,  H01S5/18311 ,  H01S5/18333 ,  H01S5/18341 ,  H01S5/18369 ,  H01S5/18377

    摘要： A vertical cavity laser includes an optical cavity adjacent to a first mirror, the optical cavity having a semiconductor portion and a dielectric spacer layer. A dielectric DBR is deposited adjacent to the dielectric spacer layer. The interface between the semiconductor portion of the optical cavity and the dielectric spacer layer is advantageously located at or near a null in the optical standing wave intensity pattern of the vertical cavity laser to reduce the losses or scattering associated with that interface.

    摘要翻译： 垂直腔激光器包括与第一反射镜相邻的光学腔，光腔具有半导体部分和电介质隔离层。 电介质DBR沉积在电介质间隔层附近。 光腔的半导体部分和电介质隔离层之间的界面有利地位于垂直腔激光器的光驻波强度图中的零位或接近零位，以减少与该界面相关的损耗或散射。

    Method and apparatus for increasing the processing capacity of optical digital processing systems having optically bistable devices
    4.
    发明授权
    Method and apparatus for increasing the processing capacity of optical digital processing systems having optically bistable devices 失效
    具有光学双稳态器件的光学数字处理系统的处理能力增加的方法和装置

    公开(公告)号：US4914286A

    公开(公告)日：1990-04-03

    申请号：US340975

    申请日：1989-04-20

    申请人： Leo M. F. Chirovsky ,  Anthony L. Lentine ,  David A. B. Miller

    发明人： Leo M. F. Chirovsky ,  Anthony L. Lentine ,  David A. B. Miller

    IPC分类号： G02F3/02 ,  G06E1/00

    CPC分类号： G02F3/028

    摘要： An optically bistable device, such as a symmetric self electro-optic effect device (S-SEED), is forced into a metastable state prior to the incidence of an optical input signal thereto, thereby increasing the sensitivity of the optically bistable device to the optical input signal, reducing both the switching time and the optical input signal energy required to switch the device. The metastable state is entered into by one of three techniques: (1) turning off the bias voltage V.sub.0 of the device with optical bias beams on then turning on the bias voltage V.sub.0 with the optical bias beams off; (2) applying a predetermined voltage to a node in the device, the predetermined voltage being substantially the metastable state voltage or V.sub.0 /2; or (3) subjecting the device to equal intensity optical bias beams having a wavelength longer than the exciton wavelength. In the second case, optical bias beams and optical input signal beams may be applied simultaneously with the application of the predetermined voltage. In the last case, optical bias beams (at the exciton wavelength) and the optical input signal beams can be applied simultaneously after removal of the long-wavelength optical bias beams, thus saving switching time. In addition, the optically bistable device may be selectively placed in the metastable state and the optical input signal have sufficient energy to switch the device only when it is in the metastable state. This allows for multiple optically bistable devices to be selectively responsive to a common optical input signal, such as in a demultiplexer.

    Mesa vertical-cavity surface-emitting laser
    5.
    发明授权
    Mesa vertical-cavity surface-emitting laser 有权
    Mesa垂直腔表面发射激光器

    公开(公告)号：US08073034B2

    公开(公告)日：2011-12-06

    申请号：US12129839

    申请日：2008-05-30

    申请人： Leo M. F. Chirovsky ,  Ramana M. V. Murty

    发明人： Leo M. F. Chirovsky ,  Ramana M. V. Murty

    IPC分类号： H01S5/00

    CPC分类号： H01S5/18369 ,  H01S5/18308 ,  H01S5/18377

    摘要： The present invention provides an improved mesa vertical-cavity surface-emitting laser (VCSEL), in which a first distributed Bragg reflector (DBR) mesa of semiconductor material is disposed on a top surface of an active layer. A contact annulus is disposed on a contact region of a top surface of the first DBR mesa, such that an inner circumference of the contact annulus defines a window region of the top surface of the first DBR mesa. A second DBR mesa of dielectric material is disposed on the window region. Whereas the first DBR mesa has a first reflectance at a lasing wavelength that is insufficient to sustain lasing in the active layer, the first DBR mesa and the second DBR mesa together have a total reflectance at the lasing wavelength that is sufficient to sustain lasing in the active layer under the window region.

    摘要翻译： 本发明提供一种改进的台面垂直腔表面发射激光器（VCSEL），其中半导体材料的第一分布式布拉格反射器（DBR）台面设置在有源层的顶表面上。 接触环设置在第一DBR台面的顶表面的接触区域上，使得接触环的内周限定了第一DBR台面的顶表面的窗口区域。 电介质材料的第二DBR台面设置在窗口区域上。 而第一DBR台面在激光波长处具有不足以维持有源层中的激光的第一反射率，第一DBR台面和第二DBR台面在激光波长处具有足够的总反射率，足以在 窗口区域下的活动层。

    Diode-clamped optical receiver
    7.
    发明授权
    Diode-clamped optical receiver 失效
    二极管钳位光接收器

    公开(公告)号：US5343032A

    公开(公告)日：1994-08-30

    申请号：US45006

    申请日：1993-04-08

    申请人： Leo M. F. Chirovsky ,  Anthony L. Lentine

    发明人： Leo M. F. Chirovsky ,  Anthony L. Lentine

    IPC分类号： H03F3/08 ,  H01J40/14

    CPC分类号： H03F3/082

    摘要： An optical receiver, e.g., receiver 10 (FIG. 1), has differential optical input beams and generates an electrical output. The voltage at an electrical node between series-connected optical detector diodes is clamped within a predefined voltage range by series-connected clamping diodes, to prevent the voltage from increasing when consecutive logic one optical input beams are received. Variable bandwidth and low energy dissipation are achieved since the resistors of high input impedance and transimpedance receivers are not required. A second optical receiver, e.g., receiver 20 (FIG. 2) is a monolithic, diode-clamped S-SEED with complementary optical input beams and complementary optical output beams.

    摘要翻译： 诸如接收机10（图1）的光接收器具有差分光输入光束并产生电输出。 串联连接的光检测器二极管之间的电节点处的电压通过串联钳位二极管钳位在预定义的电压范围内，以防止在接收连续的逻辑一个光输入光束时电压增加。 实现了可变带宽和低能耗，因为不需要高输入阻抗和跨阻抗接收器的电阻。 第二光接收器，例如接收器20（图2）是具有互补光输入光束和互补光输出光束的单片二极管钳位S-SEED。