公开(公告)号：US06720585B1

公开(公告)日：2004-04-13

申请号：US10044358

申请日：2002-01-11

申请人： John Wasserbauer ,  Ryan Likeke Naone ,  Andrew William Jackson

发明人： John Wasserbauer ,  Ryan Likeke Naone ,  Andrew William Jackson

IPC分类号： H01L3300

CPC分类号： H01L33/105 ,  H01S5/02284 ,  H01S5/02461 ,  H01S5/18308 ,  H01S5/18311 ,  H01S5/18333 ,  H01S5/18341 ,  H01S5/2063 ,  H01S2301/166

摘要： A low thermal impedance optoelectronic device includes an optical cavity adjacent a low thermal impedance DBR that provides improved heat dissipation and temperature performance. The thermal impedance of the DBR may be reduced by increasing the relative or absolute thickness of a layer of high thermal conductivity material relative to a layer of low thermal conductivity material for at least a portion of the mirror periods. The thermal impedance may also be reduced by increasing the distance between phonon scattering surfaces by increasing the thickness of the high thermal conductivity layer, the low thermal conductivity layer or both.

摘要翻译： 低热阻抗光电子器件包括邻近低热阻抗DBR的光学腔，其提供改善的散热和温度性能。 通过在镜面周期的至少一部分相对于低热导率材料层增加高导热材料层的相对或绝对厚度，可以减小DBR的热阻抗。 也可以通过增加高导热层，低热导率层或两者的厚度来增加声子散射表面之间的距离来减小热阻抗。

公开(公告)号：US20130183798A1

公开(公告)日：2013-07-18

申请号：US13608902

申请日：2012-09-10

申请人： Daniel Francis ,  Felix Ejeckam ,  John Wasserbauer ,  Dubravko Babic

发明人： Daniel Francis ,  Felix Ejeckam ,  John Wasserbauer ,  Dubravko Babic

IPC分类号： H01L21/04

CPC分类号： H01L21/0405 ,  C30B7/005 ,  H01L21/02381 ,  H01L21/02447 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02527 ,  H01L23/3732 ,  H01L2924/0002 ,  H01L2924/00

摘要： Methods for integrating wide-gap semiconductors with synthetic diamond substrates are disclosed. Diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited or formed on a layered structure including at least one layer of gallium nitride, aluminum nitride, silicon carbide, or zinc oxide. The resulting structure is a low stress process compatible with wide-gap semiconductor films, and may be processed into optical or high-power electronic devices. The diamond substrates serve as heat sinks or mechanical substrates.

摘要翻译： 公开了将宽间隙半导体与合成金刚石基底集成的方法。 通过将沉积合成金刚石沉积到沉积或形成在包括至少一层氮化镓，氮化铝，碳化硅或氧化锌的分层结构的成核层上而形成金刚石基底。 所得到的结构是与宽间隙半导体膜兼容的低应力工艺，并且可以被加工成光学或大功率电子器件。 金刚石衬底用作散热器或机械衬底。

公开(公告)号：US20050026311A1

公开(公告)日：2005-02-03

申请号：US10926733

申请日：2004-08-26

申请人： John Wasserbauer ,  Stewart Feld

发明人： John Wasserbauer ,  Stewart Feld

IPC分类号： G01R31/26 ,  G01R31/28 ,  H01L21/66

CPC分类号： G01R31/2856 ,  G01R31/2635 ,  G01R31/2831

摘要： A method and apparatus for burning in a semiconductor wafer having a plurality of active devices utilizes temporary conductive interconnect layers to separately couple at least a portion of the anodes of the active devices together as well as at least a portion of the cathodes of the devices together. A simplified probed pad, having a reduced number of contacts may then be utilized to apply a substantially constant voltage or current to the devices. The temporary conductive interconnect layer may be patterned to include device level resistors or array level resistors that may be used to mitigate the effects of short circuits or open circuits on the processing of the devices.

摘要翻译： 用于在具有多个有源器件的半导体晶片中燃烧的方法和装置利用临时导电互连层将有源器件的至少一部分阳极以及器件的阴极的至少一部分一起分开连接在一起 。 然后可以使用具有减少的触点数量的简化的探测垫来向设备施加基本上恒定的电压或电流。 临时导电互连层可以被图案化以包括可用于减轻短路或开路对器件处理的影响的器件级电阻器或阵列电平电阻器。

公开(公告)号：US08945966B2

公开(公告)日：2015-02-03

申请号：US13608902

申请日：2012-09-10

申请人： Daniel Francis ,  Felix Ejeckam ,  John Wasserbauer ,  Dubravko Babic

发明人： Daniel Francis ,  Felix Ejeckam ,  John Wasserbauer ,  Dubravko Babic

IPC分类号： H01L21/00 ,  H01L21/336 ,  H01L21/04 ,  H01L21/02 ,  H01L23/373 ,  C30B7/00

CPC分类号： H01L21/0405 ,  C30B7/005 ,  H01L21/02381 ,  H01L21/02447 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02527 ,  H01L23/3732 ,  H01L2924/0002 ,  H01L2924/00

摘要： Methods for integrating wide-gap semiconductors with synthetic diamond substrates are disclosed. Diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited or formed on a layered structure including at least one layer of gallium nitride, aluminum nitride, silicon carbide, or zinc oxide. The resulting structure is a low stress process compatible with wide-gap semiconductor films, and may be processed into optical or high-power electronic devices. The diamond substrates serve as heat sinks or mechanical substrates.

摘要翻译： 公开了将宽间隙半导体与合成金刚石基底集成的方法。 通过将沉积合成金刚石沉积到沉积或形成在包括至少一层氮化镓，氮化铝，碳化硅或氧化锌的分层结构的成核层上而形成金刚石基底。 所得到的结构是与宽间隙半导体膜兼容的低应力工艺，并且可以被加工成光学或大功率电子器件。 金刚石衬底用作散热器或机械衬底。

公开(公告)号：US07943485B2

公开(公告)日：2011-05-17

申请号：US12018131

申请日：2008-01-22

申请人： Daniel Francis ,  Felix Ejeckam ,  John Wasserbauer ,  Firooz Faili ,  Dubravko Babic

发明人： Daniel Francis ,  Felix Ejeckam ,  John Wasserbauer ,  Firooz Faili ,  Dubravko Babic

IPC分类号： H01L21/30 ,  H01L21/46

CPC分类号： G01T1/24 ,  H01L21/02389 ,  H01L21/02444 ,  H01L21/0245 ,  H01L21/02488 ,  H01L21/02502 ,  H01L21/02527 ,  H01L21/02587 ,  H01L21/02664 ,  H01L21/76254 ,  H01L27/14694 ,  H01L33/0079 ,  Y10T428/30

摘要： Method for producing composite wafers with thin high-quality semiconductor films atomically attached to synthetic diamond wafers is disclosed. Synthetic diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited on bulk semiconductor wafer which has been prepared to allow separation of the thin semiconductor film from the remaining bulk semiconductor wafer. The remaining semiconductor wafer is available for reuse. The synthetic diamond substrate serves as heat spreader and a mechanical substrate.

摘要翻译： 公开了以合成金刚石晶片原子连接的薄的高质量半导体膜制造复合晶片的方法。 合成金刚石基底是通过将合成金刚石沉积到沉积在体半导体晶片上的成核层上而制成的，所述成核层已准备好允许将薄半导体膜与剩余的体半导体晶片分离。 剩下的半导体晶片可以重新使用。 合成金刚石基底用作散热器和机械基板。

公开(公告)号：US20100001293A1

公开(公告)日：2010-01-07

申请号：US12484098

申请日：2009-06-12

申请人： Daniel Francis ,  Felix Ejeckam ,  John Wasserbauer ,  Dubravko Babic

发明人： Daniel Francis ,  Felix Ejeckam ,  John Wasserbauer ,  Dubravko Babic

IPC分类号： H01L29/02

CPC分类号： H01L21/0405 ,  C30B7/005 ,  H01L21/02381 ,  H01L21/02447 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02527 ,  H01L23/3732 ,  H01L2924/0002 ,  H01L2924/00

摘要： Methods for integrating wide-gap semiconductors with synthetic diamond substrates are disclosed. Diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited or formed on a layered structure including at least one layer of gallium nitride, aluminum nitride, silicon carbide, or zinc oxide. The resulting structure is a low stress process compatible with wide-gap semiconductor films, and may be processed into optical or high-power electronic devices. The diamond substrates serve as heat sinks or mechanical substrates.

摘要翻译： 公开了将宽间隙半导体与合成金刚石基底集成的方法。 通过将沉积合成金刚石沉积到沉积或形成在包括至少一层氮化镓，氮化铝，碳化硅或氧化锌的分层结构的成核层上而形成金刚石基底。 所得到的结构是与宽间隙半导体膜兼容的低应力工艺，并且可以被加工成光学或大功率电子器件。 金刚石衬底用作散热器或机械衬底。

公开(公告)号：US20060176544A1

公开(公告)日：2006-08-10

申请号：US11386275

申请日：2006-03-22

申请人： John Wasserbauer

发明人： John Wasserbauer

IPC分类号： H01S3/00

CPC分类号： H01S5/50 ,  H01S5/041 ,  H01S5/18311 ,  H01S5/18327 ,  H01S5/18341 ,  H01S5/18361 ,  H01S5/1838 ,  H01S5/426

摘要： A folded cavity semiconductor optical amplifier is provided that includes a first mirror disposed on a substrate of semiconductor material and an active region formed thereon consisting of an optical cavity with a gain medium. The optical cavity being disposed adjacent the first mirror. A second mirror is formed and disposed on the active region on a surface opposite the first mirror. The active region of the amplifier includes input and output portions formed in one or both mirrors. The input and output portions formed from layers of reduced reflectivity relative to the first or second mirror and a longitudinal waveguide connecting the input and output portions to allow for light to be amplified to enter at the input port, travel through the vertical cavity and longitudinal waveguide, and exit as amplified light at the output portion of the waveguide structure.

摘要翻译： 提供了一种折叠腔半导体光放大器，其包括设置在半导体材料的衬底上的第一反射镜和形成在其上的有源区域，其由具有增益介质的光腔组成。 所述光腔邻近所述第一反射镜设置。 形成第二反射镜并且设置在与第一反射镜相对的表面上的有源区上。 放大器的有源区域包括形成在一个或两个反射镜中的输入和输出部分。 输入和输出部分由相对于第一或第二反射镜的反射率降低的层和连接输入和输出部分的纵向波导形成，以允许光被放大以进入输入端口，行进通过垂直腔和纵向波导 并且作为在波导结构的输出部分处的放大光退出。

公开(公告)号：US08283672B2

公开(公告)日：2012-10-09

申请号：US12484098

申请日：2009-06-12

申请人： Daniel Francis ,  Felix Ejeckam ,  John Wasserbauer ,  Dubravko Babic

发明人： Daniel Francis ,  Felix Ejeckam ,  John Wasserbauer ,  Dubravko Babic

IPC分类号： H01L31/0264 ,  H01L29/778 ,  H01L29/20

CPC分类号： H01L21/0405 ,  C30B7/005 ,  H01L21/02381 ,  H01L21/02447 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02527 ,  H01L23/3732 ,  H01L2924/0002 ,  H01L2924/00

摘要： Methods for integrating wide-gap semiconductors with synthetic diamond substrates are disclosed. Diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited or formed on a layered structure including at least one layer of gallium nitride, aluminum nitride, silicon carbide, or zinc oxide. The resulting structure is a low stress process compatible with wide-gap semiconductor films, and may be processed into optical or high-power electronic devices. The diamond substrates serve as heat sinks or mechanical substrates.

摘要翻译： 公开了将宽间隙半导体与合成金刚石基底集成的方法。 通过将沉积合成金刚石沉积到沉积或形成在包括至少一层氮化镓，氮化铝，碳化硅或氧化锌的分层结构的成核层上而形成金刚石基底。 所得到的结构是与宽间隙半导体膜兼容的低应力工艺，并且可以被加工成光学或大功率电子器件。 金刚石衬底用作散热器或机械衬底。

公开(公告)号：US20080296586A1

公开(公告)日：2008-12-04

申请号：US12018131

申请日：2008-01-22

申请人： Daniel Francis ,  Felix Ejeckam ,  John Wasserbauer ,  Firooz Faili ,  Dubravko Babic

发明人： Daniel Francis ,  Felix Ejeckam ,  John Wasserbauer ,  Firooz Faili ,  Dubravko Babic

IPC分类号： H01L29/12 ,  B32B9/00

CPC分类号： G01T1/24 ,  H01L21/02389 ,  H01L21/02444 ,  H01L21/0245 ,  H01L21/02488 ,  H01L21/02502 ,  H01L21/02527 ,  H01L21/02587 ,  H01L21/02664 ,  H01L21/76254 ,  H01L27/14694 ,  H01L33/0079 ,  Y10T428/30

摘要： Method for producing composite wafers with thin high-quality semiconductor films atomically attached to synthetic diamond wafers is disclosed. Synthetic diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited on bulk semiconductor wafer which has been prepared to allow separation of the thin semiconductor film from the remaining bulk semiconductor wafer. The remaining semiconductor wafer is available for reuse. The synthetic diamond substrate serves as heat spreader and a mechanical substrate.

摘要翻译： 公开了以合成金刚石晶片原子连接的薄的高质量半导体膜制造复合晶片的方法。 合成金刚石基底是通过将合成金刚石沉积到沉积在体半导体晶片上的成核层上而制成的，所述成核层已准备好允许将薄半导体膜与剩余的体半导体晶片分离。 剩下的半导体晶片可以重新使用。 合成金刚石基底用作散热器和机械基板。

公开(公告)号：US06830940B1

公开(公告)日：2004-12-14

申请号：US09991568

申请日：2001-11-16

申请人： John Wasserbauer ,  Stewart A. Feld

发明人： John Wasserbauer ,  Stewart A. Feld

IPC分类号： H01L2100

CPC分类号： G01R31/2856 ,  G01R31/2635 ,  G01R31/2831

摘要： A method and apparatus for burning in a semiconductor wafer having a plurality of active devices utilizes temporary conductive interconnect layers to separately couple at least a portion of the anodes of the active devices together as well as at least a portion of the cathodes of the devices together. A simplified probed pad, having a reduced number of contacts may then be utilized to apply a substantially constant voltage or current to the devices. The temporary conductive interconnect layer may be patterned to include device level resistors or array level resistors that may be used to mitigate the effects of short circuits or open circuits on the processing of the devices.

摘要翻译： 用于在具有多个有源器件的半导体晶片中燃烧的方法和装置利用临时导电互连层将有源器件的至少一部分阳极以及器件的阴极的至少一部分一起分开 。 然后可以使用具有减少的触点数量的简化的探测垫来向设备施加基本上恒定的电压或电流。 临时导电互连层可以被图案化以包括可用于减轻短路或开路对器件处理的影响的器件级电阻器或阵列电平电阻器。