公开(公告)号：US12288779B2

公开(公告)日：2025-04-29

申请号：US17613189

申请日：2020-08-20

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Kei Takahashi ,  Koji Kusunoki ,  Hajime Kimura

IPC: H01L25/18 ,  G06F3/041 ,  G06F3/042 ,  G06F3/044 ,  H10K65/00

Abstract: To achieve multifunctionality, a large number of components and the time and effort for implementing the components are required, which leads to an increase in the manufacturing cost and a reduction in yield. A matrix display portion and a matrix optical sensor portion are formed over one substrate. In addition, a driver circuit of the display portion and a driver circuit of the optical sensor portion formed over the same substrate as that for the display portion are built in one chip, whereby the number of components can be reduced. When the optical sensor is formed in a display panel, a barcode reader function or a scanner function can be given to the display panel. Furthermore, a function of authenticating fingerprints or the like or an input/output function of a touch sensor can be given to the display panel.

公开(公告)号：US20250133906A1

公开(公告)日：2025-04-24

申请号：US18574564

申请日：2022-07-08

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Hidetomo KOBAYASHI ,  Yuki OKAMOTO ,  Toshihiko SAITO ,  Tatsuya ONUKI ,  Hidekazu MIYAIRI ,  Ryo TAGASHIRA ,  Kazuko YAMAWAKI ,  Masami ENDO

IPC: H10K59/121 ,  G09G3/3233 ,  H10K59/131

Abstract: A semiconductor device with high manufacturing yield is provided. The semiconductor device includes a plurality of subpixels. Each of the subpixels includes a first transistor, a second transistor, a first capacitor to a third capacitor, a first insulating layer, and a wiring. Each of the first capacitor to the third capacitor includes a first conductive layer, a second conductive layer, and a second insulating layer sandwiched between the first conductive layer and the second conductive layer. The first insulating layer is provided over the first transistor and the second transistor. The first conductive layers of the first capacitor to the third capacitor and the wiring are each provided over the first insulating layer. In a top view, the proportion of the total area of the first conductive layers of the first capacitor to the third capacitor and the wiring to the area of the subpixel is greater than or equal to 15 percent. The area of the first conductive layer of the second capacitor and the area of the first conductive layer of the third capacitor are each greater than or equal to twice the area of the first conductive layer of the first capacitor.

公开(公告)号：US20250133903A1

公开(公告)日：2025-04-24

申请号：US18691935

申请日：2022-09-09

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Ryota HODO ,  Daiki NAKAMURA ,  Tomoya AOYAMA

IPC: H10K59/12 ,  H10K59/122

Abstract: A display device capable of performing display at high luminance is provided. A first layer containing a first light-emitting material emitting blue light is formed into an island shape over a first pixel electrode, and then a second layer containing a second light-emitting material emitting light having a longer wavelength than blue light is formed into an island shape over a second pixel electrode. After that, an insulating layer overlapping with a region interposed between the first pixel electrode and the second pixel electrode is formed, and a common electrode is formed to cover the first layer, the second layer, and the insulating layer.

公开(公告)号：US20250133835A1

公开(公告)日：2025-04-24

申请号：US18965260

申请日：2024-12-02

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Kiyoshi KATO

IPC: H10D88/00 ,  G11C16/04 ,  G11C16/08 ,  G11C16/10 ,  G11C16/26 ,  H10B12/00 ,  H10B41/20 ,  H10B41/30 ,  H10B41/70 ,  H10B99/00 ,  H10D86/00

Abstract: An object is to provide a semiconductor device with a novel structure in which stored data can be held even when power is not supplied and there is no limit on the number of write operations. The semiconductor device includes a first memory cell including a first transistor and a second transistor, a second memory cell including a third transistor and a fourth transistor, and a driver circuit. The first transistor and the second transistor overlap at least partly with each other. The third transistor and the fourth transistor overlap at least partly with each other. The second memory cell is provided over the first memory cell. The first transistor includes a first semiconductor material. The second transistor, the third transistor, and the fourth transistor include a second semiconductor material.

公开(公告)号：US20250133824A1

公开(公告)日：2025-04-24

申请号：US18834712

申请日：2023-01-27

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Tatsuya ONUKI ,  Kiyoshi KATO ,  Hitoshi KUNITAKE ,  Ryota HODO ,  Shunpei YAMAZAKI

IPC: H10D86/40 ,  H10D30/67 ,  H10D64/68

Abstract: A semiconductor device that can be miniaturized or highly integrated is provided. First to second transistors share a first metal oxide over a first insulator and a first conductor over the first metal oxide; the first transistor includes a second conductor and a second insulator which are over the first metal oxide and a third conductor over the second insulator; the second transistor includes a fourth conductor and a third insulator which are over the first metal oxide and a fifth conductor over the third insulator; a side surface of the first insulator includes a portion in contact with the fourth conductor; an end portion of the fourth conductor includes a portion positioned outward from an end portion of the first insulator; the second insulator is positioned between the first conductor and the second conductor; the metal oxide and the third conductor overlap with each other with the second insulator therebetween; the third insulator is positioned between the first conductor and the fourth conductor; and the metal oxide and the fifth conductor overlap with each other with the third insulator therebetween.

公开(公告)号：US20250132251A1

公开(公告)日：2025-04-24

申请号：US18989697

申请日：2024-12-20

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Akio SUZUKI ,  Atsushi MIYAGUCHI ,  Shunpei YAMAZAKI

IPC: H01L23/528 ,  H01L23/31 ,  H01L23/367 ,  H10D30/67

Abstract: A semiconductor device having a novel structure is provided. The semiconductor device includes a silicon substrate and a device provided above the silicon substrate. The device includes a transistor and a conductor. The transistor includes a metal oxide in a channel formation region. Conductivity is imparted to the silicon substrate. The conductor is electrically connected to each of a drain of the transistor and the silicon substrate through an opening provided in the device. Heat of the drain of the transistor can be efficiently released through the silicon substrate.

公开(公告)号：US12283634B2

公开(公告)日：2025-04-22

申请号：US18612650

申请日：2024-03-21

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Junichi Koezuka ,  Masami Jintyou ,  Yukinori Shima

IPC: H01L29/786 ,  H01L29/423 ,  H01L29/66

Abstract: The semiconductor device includes a first insulating layer, a second insulating layer, an oxide semiconductor layer, and first to third conductive layers. The first conductive layer and the second conductive layer are connected to the oxide semiconductor layer. The second insulating layer includes a region in contact with the oxide semiconductor layer, and the third conductive layer includes a region in contact with the second insulating layer. The oxide semiconductor layer includes first to third regions. The first region and the second region are separated from each other, and the third region is located between the first region and the second region. The third region and the third conductive layer overlap with each other with the second insulating layer located therebetween. The first region and the second region include a region having a higher carbon concentration than the third region.

公开(公告)号：US20250126968A1

公开(公告)日：2025-04-17

申请号：US18906491

申请日：2024-10-04

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Nobuharu OHSAWA ,  Toshiki SASAKI ,  Shinya FUKUZAKI ,  Hiromi SEO

IPC: H10K50/17 ,  H10K50/19 ,  H10K85/60 ,  H10K101/40

Abstract: A light-emitting device with favorable characteristics is provided. In a plurality of light-emitting devices each including an organic compound layer formed over the same insulating surface, the organic compound layer includes a first light-emitting layer, a second light-emitting layer, and an intermediate layer. The intermediate layer includes a first layer. The first layer includes a metal or metal compound, a first organic compound, and a second organic compound. The first organic compound includes a π-electron deficient heteroaromatic ring. The second organic compound includes two or more heteroaromatic rings that are bonded or condensed to each other and include three or more heteroatoms in total. The second organic compound interacts with the metal or metal compound by two or more of the three or more heteroatoms as a multidentate ligand.

公开(公告)号：US20250124962A1

公开(公告)日：2025-04-17

申请号：US19002110

申请日：2024-12-26

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Jun KOYAMA ,  Kiyoshi KATO

IPC: G11C11/405 ,  G11C16/04 ,  H10B12/00 ,  H10B41/20 ,  H10B41/70 ,  H10B69/00 ,  H10D30/60 ,  H10D30/67 ,  H10D62/40 ,  H10D62/80 ,  H10D62/83 ,  H10D84/03 ,  H10D84/90 ,  H10D86/40 ,  H10D86/60 ,  H10D87/00 ,  H10D88/00

Abstract: An object is to provide a semiconductor device with a novel structure. The semiconductor device includes a first wiring; a second wiring; a third wiring; a fourth wiring; a first transistor having a first gate electrode, a first source electrode, and a first drain electrode; and a second transistor having a second gate electrode, a second source electrode, and a second drain electrode. The first transistor is provided in a substrate including a semiconductor material. The second transistor includes an oxide semiconductor layer.

公开(公告)号：US20250123483A1

公开(公告)日：2025-04-17

申请号：US18985601

申请日：2024-12-18

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Yosuke TSUKAMOTO ,  Kiyoshi KATO ,  Tatsuya ONUKI ,  Yoshiaki OIKAWA ,  Kensuke YOSHIZUMI

IPC: G02B27/00 ,  G02B27/01

Abstract: Provided is a multifunctional display device or a multifunctional electronic device. Provided is a display device or electronic device with high visibility. Provided is a display device or electronic device with low power consumption. The electronic device includes a housing, a display device, a system unit, a camera, a secondary battery, a reflective surface, and a wearing tool. The system unit and the secondary battery are each positioned inside the housing. The system unit includes a charging circuit unit. The charging circuit unit is configured to control charging of the secondary battery. The system unit is configured to perform first processing based on imaging data of the camera. The first processing includes at least one of gesture operation, head tracking, and eye tracking. The system unit is configured to generate image data based on the first processing. The display device is configured to display the image data.