公开(公告)号：US20180122768A1

公开(公告)日：2018-05-03

申请号：US15852325

申请日：2017-12-22

Applicant: ABB Schweiz AG

Inventor： Franc Dugal

IPC: H01L23/00 ,  H01L25/11 ,  H01L25/07 ,  H01L25/18 ,  H01L23/492

CPC classification number: H01L24/72 ,  H01L23/492 ,  H01L25/071 ,  H01L25/072 ,  H01L25/074 ,  H01L25/11 ,  H01L25/112 ,  H01L25/115 ,  H01L25/117 ,  H01L25/18 ,  H01R12/714 ,  H01R12/73

Abstract: The present invention relates to a spring element for a power semiconductor module, wherein the spring element includes a first part made from a first material and a second part made from a second material, the first material being different from the second material, wherein the first part comprises both a first contact portion having a first contact and a second contact portion having a second contact, wherein the first part comprises an electrically conductive path formed from the first contact portion to the second contact portion, and wherein the second part is adapted for exerting a spring force (FS) onto the first contact portion and the second contact portion for pressing the first contact to a first contact area of a power semiconductor module and the second contact to a second contact area of a power semiconductor module. Such a spring element may form a press contact in a power semiconductor module and may be less bulky compared to solutions in the prior art and may be formed cost-sparingly.

公开(公告)号：US20190355633A1

公开(公告)日：2019-11-21

申请号：US16528791

申请日：2019-08-01

Applicant: ABB Schweiz AG

Inventor： Chunlei Liu ,  Franc Dugal ,  Munaf Rahimo ,  Peter Karl Steimer

IPC: H01L23/051 ,  H01L23/62 ,  H01L25/07 ,  H01L23/492 ,  H02H3/08 ,  H02H3/02

Abstract: A power semiconductor device includes a Si chip providing a Si switch and a wide bandgap material chip providing a wide bandgap material switch, wherein the Si switch and the wide bandgap material switch are electrically connected in parallel. A method for controlling a power semiconductor device includes: during a normal operation mode, controlling at least the wide bandgap material switch for switching a current through the power semiconductor device by applying corresponding gate signals to at least the wide bandgap material switch; sensing a failure in the power semiconductor device; and, in the case of a sensed failure, controlling the Si switch by applying a gate signal, such that a current is generated in the Si chip heating the Si chip to a temperature forming a permanent conducting path through the Si chip.

公开(公告)号：US10483244B2

公开(公告)日：2019-11-19

申请号：US14878466

申请日：2015-10-08

Applicant: ABB Schweiz AG

Inventor： Samuel Hartmann ,  Franc Dugal ,  Olle Ekwall ,  Erik Doré

IPC: H01L25/07 ,  H01L23/051 ,  H01L23/492

Abstract: A power semiconductor module includes a first main electrode, a second main electrode and a control terminal. The power semiconductor module includes controllable power semiconductor components arranged between the first main electrode and the second main electrode. At least some of the controllable power semiconductor components are arranged in a ring arrangement, wherein the controllable power semiconductor components of the ring arrangement are arranged at least approximately along a first circular line of the ring arrangement, and a control conductor track of the ring arrangement is arranged on the first main electrode, wherein the control conductor track runs at least approximately along a second circular line of the ring arrangement, and the second circular line runs concentrically relative to the first circular line.

公开(公告)号：US10573620B2

公开(公告)日：2020-02-25

申请号：US15852325

申请日：2017-12-22

Applicant: ABB Schweiz AG

Inventor： Franc Dugal

IPC: H01L23/00 ,  H01L25/07 ,  H01L25/11 ,  H01L25/18 ,  H01R12/73 ,  H01R12/71 ,  H01L23/492

Abstract: The present invention relates to a spring element for a power semiconductor module, wherein the spring element includes a first part made from a first material and a second part made from a second material, the first material being different from the second material, wherein the first part comprises both a first contact portion having a first contact and a second contact portion having a second contact, wherein the first part comprises an electrically conductive path formed from the first contact portion to the second contact portion, and wherein the second part is adapted for exerting a spring force (FS) onto the first contact portion and the second contact portion for pressing the first contact to a first contact area of a power semiconductor module and the second contact to a second contact area of a power semiconductor module. Such a spring element may form a press contact in a power semiconductor module and may be less bulky compared to solutions in the prior art and may be formed cost-sparingly.

公开(公告)号：US20190355634A1

公开(公告)日：2019-11-21

申请号：US16529295

申请日：2019-08-01

Applicant: ABB Schweiz AG

Inventor： Chunlei Liu ,  Juergen Schuderer ,  Franziska Brem ,  Munaf Rahimo ,  Peter Karl Steimer ,  Franc Dugal

IPC: H01L23/051 ,  H01L23/62 ,  H01L23/492 ,  H01L23/00 ,  H01L25/07 ,  H01L29/16

Abstract: A power semiconductor device includes a base plate; a Si chip including a Si substrate, the Si chip attached to the base plate; a first metal preform pressed with a first press pin against the Si chip; a wide bandgap material chip comprising a wide bandgap substrate and a semiconductor switch provided in the wide bandgap substrate, the wide bandgap material chip attached to the base plate; and a second metal preform pressed with a second press pin against the wide bandgap material chip; the Si chip and the wide bandgap material chip are connected in parallel via the base plate and via the first press pin and the second press pin; the first metal preform is adapted for forming a conducting path through the Si chip, when heated by an overcurrent; and the second metal preform is adapted for forming an temporary conducting path through the wide bandgap material chip or an open circuit, when heated by an overcurrent.