-
公开(公告)号：US09051655B2
公开(公告)日：2015-06-09
申请号：US14028099
申请日：2013-09-16
Applicant: Applied Materials, Inc.
Inventor： Kai Wu , Sang Ho Yu , Kie Jin Park , Glen T. Mori , Joshua Collins
CPC classification number: C23F4/00 , C23G5/00 , H01J37/32009 , H01J2237/334 , H01L21/02068
Abstract: Embodiments described herein generally provide a method for performing a semiconductor precleaning process. More specifically, embodiments provided herein relate to boron ionization for aluminum oxide etch enhancement. A process for removing native oxide from aluminum may utilize ionized boron alone or in combination with a halogen plasma. The ionized boron may provide improved aluminum oxide etching properties while being highly selective for native oxides more generally.
Abstract translation: 本文描述的实施例通常提供了一种用于执行半导体预清洗处理的方法。 更具体地，本文提供的实施方案涉及用于氧化铝蚀刻增强的硼电离。 从铝中除去天然氧化物的方法可以单独使用电离硼或与卤素等离子体组合使用。 电离硼可以提供改进的氧化铝蚀刻性质，同时更通常地对天然氧化物具有高选择性。
-
2.发明申请METHODS FOR FORMING A COBALT-RUTHENIUM LINER LAYER FOR INTERCONNECT STRUCTURES 有权形成用于互连结构的钴 - 钌衬层的方法公开(公告)号：US20150203961A1
公开(公告)日：2015-07-23
申请号：US14601685
申请日：2015-01-21
Applicant: APPLIED MATERIALS, INC.
Inventor： TAE HONG HA , Wei Lei , Kie Jin Park
CPC classification number: C23C16/045 , C23C16/0281 , C23C16/16 , C23C16/45523 , C23C16/56 , C23C28/021 , C23C28/023
Abstract: Methods for forming a liner layer are provided herein. In some embodiments, a method of forming a liner layer on a substrate disposed in a process chamber, the substrate having an opening formed in a first surface of the substrate, the opening having a sidewall and a bottom surface, the method includes exposing the substrate to a cobalt precursor gas and to a ruthenium precursor gas to form a cobalt-ruthenium liner layer on the first surface of the substrate and on the sidewall and bottom surface of the opening.
Abstract translation: 本文提供了形成衬垫层的方法。 在一些实施例中，一种在设置在处理室中的衬底上形成衬层的方法，所述衬底具有形成在衬底的第一表面中的开口，所述开口具有侧壁和底表面，所述方法包括使衬底 涉及一种钴前体气体和一种钌前驱体气体，以在该基底的第一表面和该开口的侧壁和底表面上形成钴 - 钌内衬层。
-
公开(公告)号：US09653352B2
公开(公告)日：2017-05-16
申请号：US14300773
申请日：2014-06-10
Applicant: APPLIED MATERIALS, INC.
Inventor： Liqi Wu , Sang Ho Yu , Kazuya Daito , Kie Jin Park , Kai Wu , David Thompson
IPC: H01L21/768 , H01L21/285 , C23C16/04 , C23C16/06 , C23C16/455
CPC classification number: H01L21/76877 , C23C16/045 , C23C16/06 , C23C16/45536 , H01L21/28556 , H01L21/76843 , H01L21/76876
Abstract: Methods for forming metal organic tungsten for middle-of-the-line (MOL) applications are provided herein. In some embodiments, a method of processing a substrate includes providing a substrate to a process chamber, wherein the substrate includes a feature formed in a first surface of a dielectric layer of the substrate; exposing the substrate to a plasma formed from a first gas comprising a metal organic tungsten precursor to form a tungsten barrier layer atop the dielectric layer and within the feature, wherein a temperature of the process chamber during formation of the tungsten barrier layer is less than about 225 degrees Celsius; and depositing a tungsten fill layer over the tungsten barrier layer to fill the feature to the first surface.
-
公开(公告)号：US09677172B2
公开(公告)日：2017-06-13
申请号：US14601685
申请日：2015-01-21
Applicant: APPLIED MATERIALS, INC.
Inventor： Tae Hong Ha , Wei Lei , Kie Jin Park
CPC classification number: C23C16/045 , C23C16/0281 , C23C16/16 , C23C16/45523 , C23C16/56 , C23C28/021 , C23C28/023
Abstract: Methods for forming a liner layer are provided herein. In some embodiments, a method of forming a liner layer on a substrate disposed in a process chamber, the substrate having an opening formed in a first surface of the substrate, the opening having a sidewall and a bottom surface, the method includes exposing the substrate to a cobalt precursor gas and to a ruthenium precursor gas to form a cobalt-ruthenium liner layer on the first surface of the substrate and on the sidewall and bottom surface of the opening.
-
-
-
Search Results
4
records
(took 0.01 seconds)
