公开(公告)号：US20250046602A1

公开(公告)日：2025-02-06

申请号：US18229884

申请日：2023-08-03

Applicant: Applied Materials, Inc.

Inventor： Bhaskar Jyoti Bhuyan ,  Mark J. Saly ,  Lakmal Charidu Kalutarage ,  Feng Q. Liu ,  Jeffrey W. Anthis ,  Abhijit Basu Mallick ,  Akhil Singhal

IPC: H01L21/02 ,  C23C14/00 ,  C23C14/04 ,  C23C14/06 ,  C23C14/10 ,  C23C14/34 ,  C23C14/58

Abstract: A method includes obtaining a base structure of an electronic device, the base structure including at least one opening, and forming, using a reactive-ion deposition process, a dielectric material within the at least one opening.

公开(公告)号：US11886120B2

公开(公告)日：2024-01-30

申请号：US17356304

申请日：2021-06-23

Applicant: Applied Materials, Inc

Inventor： Lakmal Charidu Kalutarage ,  Mark Joseph Saly ,  Bhaskar Jyoti Bhuyan ,  Thomas Joseph Knisley ,  Kelvin Chan ,  Regina Germanie Freed ,  David Michael Thompson ,  Susmit Singha Roy ,  Madhur Sachan

IPC: G03F7/16 ,  G03F7/004 ,  C23C16/50 ,  C23C16/455 ,  C23C16/40 ,  H01L21/027

CPC classification number: G03F7/167 ,  C23C16/40 ,  C23C16/45536 ,  C23C16/45553 ,  C23C16/50 ,  G03F7/0043 ,  G03F7/168 ,  H01L21/0274

Abstract: Embodiments disclosed herein include methods of depositing a metal oxo photoresist using dry deposition processes. In an embodiment, the method comprises forming a first metal oxo film on the substrate with a first vapor phase process including a first metal precursor vapor and a first oxidant vapor, and forming a second metal oxo film over the first metal oxo film with a second vapor phase process including a second metal precursor vapor and a second oxidant vapor.

公开(公告)号：US20220308453A1

公开(公告)日：2022-09-29

申请号：US17684329

申请日：2022-03-01

Applicant: Applied Materials, Inc.

Inventor： Lakmal Charidu Kalutarage ,  Aaron Dangerfield ,  Mark Joseph Saly

IPC: G03F7/16 ,  H01L21/027 ,  H01J37/32 ,  G03F7/039 ,  C23C16/455 ,  G03F7/20

Abstract: Embodiments disclosed herein include methods of depositing a positive tone photoresist using dry deposition and oxidation treatment processes. In an example, a method for forming a photoresist layer over a substrate in a vacuum chamber includes providing a metal precursor vapor into the vacuum chamber. The method further includes providing an oxidant vapor into the vacuum chamber, where a reaction between the metal precursor vapor and the oxidant vapor results in the formation of a positive tone photoresist layer on a surface of the substrate. The positive tone photoresist layer is a metal-oxo containing material. The method further includes performing a post anneal process of the metal-oxo containing material in an oxygen-containing environment.

公开(公告)号：US20220028691A1

公开(公告)日：2022-01-27

申请号：US16934730

申请日：2020-07-21

Applicant: Applied Materials, Inc.

Inventor： Lakmal Charidu Kalutarage ,  Mark Joseph Saly ,  Bhaskar Jyoti Bhuyan ,  Thomas Joseph Knisley ,  Kelvin Chan ,  Regina Germanie Freed ,  David Michael Thompson ,  Susmit Singha Roy ,  Madhur Sachan

IPC: H01L21/033 ,  H01L21/02

Abstract: Embodiments disclosed herein include methods of depositing a metal oxo photoresist using dry deposition processes. In an embodiment, the method comprises forming a first metal oxo film on the substrate with a first vapor phase process including a first metal precursor vapor and a first oxidant vapor, and forming a second metal oxo film over the first metal oxo film with a second vapor phase process including a second metal precursor vapor and a second oxidant vapor.

公开(公告)号：US20230386839A2

公开(公告)日：2023-11-30

申请号：US18082872

申请日：2022-12-16

Applicant: Applied Materials, Inc.

Inventor： Lakmal Charidu Kalutarage ,  Mark Joseph Saly ,  Bhaskar Jyoti Bhuyan ,  Thomas Joseph Knisley ,  Kelvin Chan ,  Regina Germanie Freed ,  David Michael Thompson ,  Susmit Singha Roy ,  Madhur Sachan

IPC: H01L21/033 ,  H01L21/02

CPC classification number: H01L21/0332 ,  H01L21/02172 ,  H01L21/0234 ,  H01L21/02205 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02271

Abstract: Embodiments disclosed herein include methods of depositing a metal oxo photoresist using dry deposition processes. In an embodiment, the method comprises forming a first metal oxo film on the substrate with a first vapor phase process including a first metal precursor vapor and a first oxidant vapor, and forming a second metal oxo film over the first metal oxo film with a second vapor phase process including a second metal precursor vapor and a second oxidant vapor.

公开(公告)号：US20230215736A1

公开(公告)日：2023-07-06

申请号：US18116556

申请日：2023-03-02

Applicant: Applied Materials, Inc.

Inventor： Lakmal Charidu Kalutarage ,  Mark Joseph Saly ,  Bhaskar Jyoti Bhuyan ,  Madhur Sachan ,  Regina Freed

IPC: H01L21/3213 ,  C23F4/02 ,  G03F7/004 ,  G03F7/26 ,  G03F7/36

CPC classification number: H01L21/32135 ,  C23F4/02 ,  G03F7/0043 ,  G03F7/265 ,  G03F7/0042 ,  G03F7/36

Abstract: Embodiments disclosed herein include methods of developing a metal oxo photoresist. In an embodiment, the method comprises providing a substrate with the metal oxo photoresist into a vacuum chamber, where the metal oxo photoresist comprises exposed regions and unexposed regions. In an embodiment, the unexposed regions comprise a higher carbon concentration than the exposed regions. The method may further comprise vaporizing a halogenating agent into the vacuum chamber, where the halogenating agent reacts with either the unexposed regions or the exposed regions to produce a volatile byproduct. In an embodiment, the method may further comprise purging the vacuum chamber.

公开(公告)号：US20230127535A1

公开(公告)日：2023-04-27

申请号：US18082872

申请日：2022-12-16

Applicant: Applied Materials, Inc.

Inventor： Lakmal Charidu Kalutarage ,  Mark Joseph Saly ,  Bhaskar Jyoti Bhuyan ,  Thomas Joseph Knisley ,  Kelvin Chan ,  Regina Gemanie Freed ,  David Michael Thompson ,  Susmit Singha Roy ,  Madhur Sachan

IPC: H01L21/033 ,  H01L21/02

Abstract: Embodiments disclosed herein include methods of depositing a metal oxo photoresist using dry deposition processes. In an embodiment, the method comprises forming a first metal oxo film on the substrate with a first vapor phase process including a first metal precursor vapor and a first oxidant vapor, and forming a second metal oxo film over the first metal oxo film with a second vapor phase process including a second metal precursor vapor and a second oxidant vapor.

公开(公告)号：US11621172B2

公开(公告)日：2023-04-04

申请号：US17348589

申请日：2021-06-15

Applicant: Applied Materials, Inc.

Inventor： Lakmal Charidu Kalutarage ,  Mark Joseph Saly ,  Bhaskar Jyoti Bhuyan ,  Madhur Sachan ,  Regina Freed

IPC: H01L21/3213 ,  C23F4/02 ,  G03F7/004 ,  G03F7/26 ,  G03F7/36

Abstract: Embodiments disclosed herein include methods of developing a metal oxo photoresist. In an embodiment, the method comprises providing a substrate with the metal oxo photoresist into a vacuum chamber, where the metal oxo photoresist comprises exposed regions and unexposed regions. In an embodiment, the unexposed regions comprise a higher carbon concentration than the exposed regions. The method may further comprise vaporizing a halogenating agent into the vacuum chamber, where the halogenating agent reacts with either the unexposed regions or the exposed regions to produce a volatile byproduct. In an embodiment, the method may further comprise purging the vacuum chamber.

公开(公告)号：US20220002882A1

公开(公告)日：2022-01-06

申请号：US17348589

申请日：2021-06-15

Applicant: Applied Materials, Inc.

Inventor： Lakmal Charidu Kalutarage ,  Mark Joseph Saly ,  Bhaskar Jyoti Bhuyan ,  Madhur Sachan ,  Regina Freed

IPC: C23F4/02 ,  H01L21/3213

Abstract: Embodiments disclosed herein include methods of developing a metal oxo photoresist. In an embodiment, the method comprises providing a substrate with the metal oxo photoresist into a vacuum chamber, where the metal oxo photoresist comprises exposed regions and unexposed regions. In an embodiment, the unexposed regions comprise a higher carbon concentration than the exposed regions. The method may further comprise vaporizing a halogenating agent into the vacuum chamber, where the halogenating agent reacts with either the unexposed regions or the exposed regions to produce a volatile byproduct. In an embodiment, the method may further comprise purging the vacuum chamber.

公开(公告)号：US12068170B2

公开(公告)日：2024-08-20

申请号：US18198743

申请日：2023-05-17

Applicant: Applied Materials, Inc.

Inventor： Lakmal Charidu Kalutarage ,  Mark Joseph Saly ,  Bhaskar Jyoti Bhuyan ,  Madhur Sachan ,  Regina Freed

IPC: H01L21/3213 ,  C23F4/02 ,  G03F7/004 ,  G03F7/26 ,  G03F7/36

CPC classification number: H01L21/32135 ,  C23F4/02 ,  G03F7/0042 ,  G03F7/0043 ,  G03F7/265 ,  G03F7/36

Abstract: Embodiments disclosed herein include methods of developing a metal oxo photoresist. In an embodiment, the method comprises providing a substrate with the metal oxo photoresist into a vacuum chamber, where the metal oxo photoresist comprises exposed regions and unexposed regions. In an embodiment, the unexposed regions comprise a higher carbon concentration than the exposed regions. The method may further comprise vaporizing a halogenating agent into the vacuum chamber, where the halogenating agent reacts with either the unexposed regions or the exposed regions to produce a volatile byproduct. In an embodiment, the method may further comprise purging the vacuum chamber.