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    TRANSITION METAL DEPOSITION METHOD
    3.
    发明申请
    TRANSITION METAL DEPOSITION METHOD 有权

    公开(公告)号：US20220195599A1

    公开(公告)日：2022-06-23

    申请号：US17554009

    申请日：2021-12-17

    Applicant: ASM IP Holding B.V.

    Inventor： Charles Dezelah ,  Jan Willem Maes ,  Elina Färm ,  Saima Ali ,  Antti Niskanen

    IPC: C23C16/455 ,  C23C16/18 ,  C23C16/54

    Abstract: The current disclosure relates to methods of depositing transition metal on a substrate. The disclosure further relates to a transition metal layer, to a structure and to a device comprising a transition metal layer. In the method, transition metal is deposited on a substrate by a cyclical deposition process, and the method comprises providing a substrate in a reaction chamber, providing a transition metal precursor to the reaction chamber in a vapor phase and providing a reactant to the reaction chamber in a vapor phase to form transition metal on the substrate. The transition metal precursor comprises a transition metal from any of groups 4 to 6, and the reactant comprises a group 14 element selected from Si, Ge or Sn.

    SELECTIVE DEPOSITION ON METAL OR METALLIC SURFACES RELATIVE TO DIELECTRIC SURFACES
    4.
    发明申请
    SELECTIVE DEPOSITION ON METAL OR METALLIC SURFACES RELATIVE TO DIELECTRIC SURFACES 有权

    公开(公告)号：US20220025513A1

    公开(公告)日：2022-01-27

    申请号：US17450742

    申请日：2021-10-13

    Applicant: ASM IP HOLDING B.V.

    Inventor： Suvi P. Haukka ,  Raija H. Matero ,  Elina Färm ,  Tom E. Blomberg

    IPC: C23C16/04 ,  H01L21/285 ,  H01L21/02 ,  C23C16/42 ,  C23C16/56 ,  C23C16/455

    Abstract: Methods are provided for selectively depositing a material on a first metal or metallic surface of a substrate relative to a second, dielectric surface of the substrate, or for selectively depositing metal oxides on a first metal oxide surface of a substrate relative to a second silicon oxide surface. The selectively deposited material can be, for example, a metal, metal oxide, metal nitride, metal silicide, metal carbide and/or dielectric material. In some embodiments a substrate comprising a first metal or metallic surface and a second dielectric surface is alternately and sequentially contacted with a first vapor-phase metal halide reactant and a second reactant. In some embodiments a substrate comprising a first metal oxide surface and a second silicon oxide surface is alternately and sequentially contacted with a first vapor phase metal fluoride or chloride reactant and water.

    Selective deposition using hydrophobic precursors
    5.
    发明授权
    Selective deposition using hydrophobic precursors 有权

    公开(公告)号：US12080548B2

    公开(公告)日：2024-09-03

    申请号：US17370263

    申请日：2021-07-08

    Applicant: ASM IP HOLDING B.V.

    Inventor： Elina Färm ,  Hidemi Suemori ,  Raija H. Matero ,  Antti Niskanen ,  Suvi P. Haukka ,  Eva Tois

    IPC: H01L21/02 ,  C23C16/40 ,  C23C16/455 ,  H01L21/32

    CPC classification number: H01L21/0228 ,  C23C16/40 ,  C23C16/405 ,  C23C16/45525 ,  C23C16/45553 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/32

    Abstract: Vapor deposition processes are provided in which a material is selectively deposited on a first surface of a substrate relative to a second organic surface. In some embodiments a substrate comprising a first surface, such as a metal, semi-metal or oxidized metal or semi-metal is contacted with a first vapor phase hydrophobic reactant and a second vapor phase reactant such that the material is deposited selectively on the first surface relative to the second organic surface. The second organic surface may comprise, for example, a self-assembled monolayer, a directed self-assembled layer, or a polymer, such as a polyimide, polyamide, polyurea or polystyrene. The material that is deposited may be, for example, a metal or metallic material. In some embodiments the material is a metal oxide, such as ZrO2 or HfO2. In some embodiments the vapor deposition process is a cyclic chemical vapor deposition (CVD) process or an atomic layer deposition (ALD) process. In some embodiments the material is deposited on the first surface relative to the second surface with a selectivity of greater than about 50%, greater than about 60%, greater than about 70%, greater than about 80%, greater than about 90% or greater than about 95%.

    TRANSITION METAL NITRIDE DEPOSITION METHOD
    7.
    发明申请
    TRANSITION METAL NITRIDE DEPOSITION METHOD 有权

    公开(公告)号：US20220411919A1

    公开(公告)日：2022-12-29

    申请号：US17849077

    申请日：2022-06-24

    Applicant: ASM IP Holding B.V.

    Inventor： Elina Färm ,  Jan Willem Maes ,  Charles Dezelah ,  Shinya Ishiwata

    IPC: C23C16/34 ,  C23C16/455 ,  C23C16/458

    Abstract: The present disclosure relates to methods and apparatuses for depositing a transition metal nitride-containing material on a substrate in the field of manufacturing semiconductor devices. Methods according to the current disclosure comprise a cyclic deposition process, in which a substrate is provided in a reaction chamber, an organometallic transition metal precursor is provided to the reaction chamber in a vapor phase, and a nitrogen precursor is provided into the reaction chamber in a vapor phase to form a transition metal nitride on the substrate. The disclosure further relates to a transition metal nitride layer, to a semiconductor structure and a device, as well as to a deposition assembly for depositing a transition metal nitride on a substrate.

    SELECTIVE DEPOSITION OF TRANSITION METAL-CONTAINING MATERIAL
    9.
    发明申请
    SELECTIVE DEPOSITION OF TRANSITION METAL-CONTAINING MATERIAL 有权

    公开(公告)号：US20220254642A1

    公开(公告)日：2022-08-11

    申请号：US17667013

    申请日：2022-02-08

    Applicant: ASM IP Holding B.V.

    Inventor： Elina Färm ,  Jan Willem Maes ,  Saima Ali

    IPC: H01L21/285 ,  C23C16/455 ,  C23C16/30

    Abstract: The current disclosure relates to methods and apparatuses for the manufacture of semiconductor devices In the disclosure, a transition metal-containing material is selectively deposited on a substrate by a cyclic deposition process. The deposition method comprises providing a substrate in a reaction chamber, wherein the substrate comprises a first surface comprising a first material, and a second surface comprising a second material. A transition metal precursor comprising a transition metal halide compound is provided in the reaction chamber in vapor phase and a second precursor is provided in the reaction chamber in vapor phase to deposit a transition metal-containing material on the first surface relative to the second surface. A transition metal compound may comprise an adduct-forming ligand. Further, a deposition assembly for depositing transition metal-comprising material is disclosed.

    MOLYBDENUM DEPOSITION METHOD
    10.
    发明申请
    MOLYBDENUM DEPOSITION METHOD 有权

    公开(公告)号：US20220139713A1

    公开(公告)日：2022-05-05

    申请号：US17511837

    申请日：2021-10-27

    Applicant: ASM IP Holding B.V.

    Inventor： Elina Färm ,  Jan Willem Maes ,  Charles Dezelah ,  Shinya Iwashita

    IPC: H01L21/285 ,  C23C16/18 ,  C23C16/455

    Abstract: The current disclosure relates to methods of depositing molybdenum on a substrate. The disclosure further relates to a molybdenum layer, to a structure and to a device comprising a molybdenum layer. In the method, molybdenum is deposited on a substrate by a cyclical deposition process, and the method comprises providing a substrate in a reaction chamber, providing a molybdenum precursor to the reaction chamber in a vapor phase and providing a reactant to the reaction chamber in a vapor phase to form molybdenum on the substrate. The molybdenum precursor comprises a molybdenum atom and a hydrocarbon ligand, and the reactant comprises a hydrocarbon comprising two or more halogen atoms, and at least two halogen atoms are attached to different carbon atoms.

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