公开(公告)号：US20220285211A1

公开(公告)日：2022-09-08

申请号：US17680711

申请日：2022-02-25

申请人： ASM IP Holding B.V.

发明人： Elina Färm ,  Shinya Iwashita ,  Charles Dezelah ,  Jan Willem Maes ,  Timothee Blanquart ,  René Henricus Jozef Vervuurt ,  Viljami Pore ,  Giuseppe Alessio Verni ,  Qi Xie ,  Ren-Jie Chang ,  Eric James Shero

IPC分类号： H01L21/768 ,  H01L21/02 ,  C23C16/455

摘要： Disclosed are methods and systems for filling a gap. An exemplary method comprises providing a substrate to a reaction chamber. The substrate comprises the gap. The method further comprises at least partially filling the gap with a gap filling fluid. The methods and systems are useful, for example, in the field of integrated circuit manufacture.

公开(公告)号：US20220139713A1

公开(公告)日：2022-05-05

申请号：US17511837

申请日：2021-10-27

申请人： ASM IP Holding B.V.

发明人： Elina Färm ,  Jan Willem Maes ,  Charles Dezelah ,  Shinya Iwashita

IPC分类号： H01L21/285 ,  C23C16/18 ,  C23C16/455

摘要： The current disclosure relates to methods of depositing molybdenum on a substrate. The disclosure further relates to a molybdenum layer, to a structure and to a device comprising a molybdenum layer. In the method, molybdenum is deposited on a substrate by a cyclical deposition process, and the method comprises providing a substrate in a reaction chamber, providing a molybdenum precursor to the reaction chamber in a vapor phase and providing a reactant to the reaction chamber in a vapor phase to form molybdenum on the substrate. The molybdenum precursor comprises a molybdenum atom and a hydrocarbon ligand, and the reactant comprises a hydrocarbon comprising two or more halogen atoms, and at least two halogen atoms are attached to different carbon atoms.

公开(公告)号：US20230096838A1

公开(公告)日：2023-03-30

申请号：US17953847

申请日：2022-09-27

申请人： ASM IP Holding B.V.

发明人： Jan Willem Maes ,  Elina Färm ,  Charles Dezelah ,  Shinya Iwashita

IPC分类号： H01L21/768 ,  H01L21/02 ,  C23C16/455 ,  C23C16/18

摘要： Disclosed are methods and systems for filling a gap. An exemplary method comprises providing a substrate to a reaction chamber. The substrate comprises the gap. The method comprises filling the gap with a metal-containing material.

公开(公告)号：US20220068634A1

公开(公告)日：2022-03-03

申请号：US17407839

申请日：2021-08-20

申请人： ASM IP Holding B.V.

发明人： Shaoren Deng ,  Andrea Illiberi ,  Daniele Chiappe ,  Eva Tois ,  Giuseppe Alessio Verni ,  Michael Givens ,  Varun Sharma ,  Chiyu Zhu ,  Shinya Iwashita ,  Charles Dezelah ,  Viraj Madhiwala ,  Jan Willem Maes ,  Marko Tuominen ,  Anirudhan Chandrasekaran

IPC分类号： H01L21/02 ,  H01L21/285 ,  B08B3/08 ,  B08B5/00 ,  C23C16/02 ,  C11D11/00 ,  C11D7/26 ,  C11D7/24 ,  C11D7/02

摘要： Methods for cleaning a substrate are disclosed. The substrate comprises a dielectric surface and a metal surface. The methods comprise providing a cleaning agent to the reaction chamber.

公开(公告)号：US20210193515A1

公开(公告)日：2021-06-24

申请号：US17110709

申请日：2020-12-03

申请人： ASM IP Holding B.V.

发明人： Chiyu Zhu ,  Shinya Iwashita ,  Jan Willem Maes ,  Jiyeon Kim

IPC分类号： H01L21/768 ,  H01L21/67 ,  C23C16/52 ,  C23C16/455 ,  C23C16/34 ,  C23C16/06 ,  C23C16/46

摘要： Systems and methods are described for depositing a TiN liner layer and a cobalt seed layer on a semiconductor wafer in a cobalt metallization process. In some embodiments the wafer is cooled after deposition of the TiN liner layer and/or the cobalt seed layer. In some embodiments the TiN liner layer and cobalt seed layer are deposited in process modules that are part of a semiconductor processing apparatus that also includes one or more modules for cooling the substrate. In some embodiments the cobalt seed layer may comprise a mixture of TiN and cobalt, a nanolaminate of TiN and cobalt layers or a graded TiN/Co layer.