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    Selective deposition using hydrophobic precursors
    2.
    发明授权
    Selective deposition using hydrophobic precursors 有权

    公开(公告)号：US11081342B2

    公开(公告)日：2021-08-03

    申请号：US15581726

    申请日：2017-04-28

    申请人： ASM IP HOLDING B.V.

    发明人： Elina Färm ,  Hidemi Suemori ,  Raija Matero ,  Antti Niskanen ,  Suvi P. Haukka ,  Eva Tois

    IPC分类号： H01L21/02 ,  C23C16/40 ,  C23C16/455 ,  H01L21/32

    摘要： Vapor deposition processes are provided in which a material is selectively deposited on a first surface of a substrate relative to a second organic surface. In some embodiments a substrate comprising a first surface, such as a metal, semi-metal or oxidized metal or semi-metal is contacted with a first vapor phase hydrophobic reactant and a second vapor phase reactant such that the material is deposited selectively on the first surface relative to the second organic surface. The second organic surface may comprise, for example, a self-assembled monolayer, a directed self-assembled layer, or a polymer, such as a polyimide, polyamide, polyuria or polystyrene. The material that is deposited may be, for example, a metal or metallic material. In some embodiments the material is a metal oxide, such as ZrO2 or HfO2. In some embodiments the vapor deposition process is a cyclic chemical vapor deposition (CVD) process or an atomic layer deposition (ALD) process. In some embodiments the material is deposited on the first surface relative to the second surface with a selectivity of greater than about 50%, greater than about 60%, greater than about 70%, greater than about 80%, greater than about 90% or greater than about 95%.

    TEMPERATURE-INDEXED THIN FILM DEPOSITION REACTORS
    4.
    发明申请
    TEMPERATURE-INDEXED THIN FILM DEPOSITION REACTORS 审中-公开

    公开(公告)号：US20200071828A1

    公开(公告)日：2020-03-05

    申请号：US16677446

    申请日：2019-11-07

    申请人： ASM IP Holding B.V.

    发明人： Bert Jongbloed ,  Delphine Longrie ,  Robin Roelofs ,  Lucian Jdira ,  Suvi Haukka ,  Antti Niskanen ,  Jun Kawahara ,  Yukihiro Mori

    IPC分类号： C23C16/455 ,  C23C16/458 ,  C23C16/52 ,  H01L21/02 ,  H01L21/285 ,  C23C16/54

    摘要： In accordance with some embodiments herein, methods and apparatuses for deposition of thin films are provided. In some embodiments, a deposition reactor is provided comprising: a first station configured to contain a substrate, the first station comprising a first heating element; a second station configured to contain the substrate, the second station comprising a second heating element, wherein the first station is configured to contact the substrate with a first reactant in the first station in substantial isolation from the second station such that a layer of the first reactant is deposited on the substrate, wherein the first heating element is configured to heat the first station to a first station temperature during contacting of the substrate with the first reactant, wherein the second station is configured to contact the substrate with a second reactant in the second station substantially in the absence of the first reactant, and wherein the second heating element is configured to heat the second station to a second station temperature during contacting of the substrate with the second reactant, a transfer system; and a controller set to control a cycle of: moving the substrate via the transfer system to the first station, directing the first station to contact the substrate with the first reactant at the first station temperature, moving the substrate to the second station via the transfer system, and directing the second station to contact the substrate with the second reactant at the second station temperature, and further set to repeat the cycle until a film of desired thickness is formed on a surface of the substrate.

    Container for efficient vaporization of precursor materials and method of using the same
    5.
    发明申请
    Container for efficient vaporization of precursor materials and method of using the same 有权

    公开(公告)号：US20220205088A1

    公开(公告)日：2022-06-30

    申请号：US17563158

    申请日：2021-12-28

    申请人： ASM IP Holding B.V.

    发明人： Antti Niskanen

    IPC分类号： C23C16/448 ,  C23C16/54 ,  C23C16/52 ,  C23C16/455

    摘要： A precursor vessel for a vapor deposition process is disclosed. The vessel includes a housing having an inlet, an outlet, and defining an interior volume. A tube is disposed within the interior volume and extends from the inlet to the outlet. The tube has sidewalls defining a flowpath there through. The sidewalls have an internal surface facing the flowpath having a plurality of depressions in the internal surface having a depth and a width. A solid precursor material may be loaded into the depressions. A system including the precursor vessel and a vapor deposition process are further disclosed herein.

    SELECTIVE DEPOSITION USING HYDROPHOBIC PRECURSORS
    10.
    发明申请
    SELECTIVE DEPOSITION USING HYDROPHOBIC PRECURSORS 有权

    公开(公告)号：US20210351031A1

    公开(公告)日：2021-11-11

    申请号：US17370263

    申请日：2021-07-08

    申请人： ASM IP HOLDING B.V.

    发明人： Elina Färm ,  Hidemi Suemori ,  Raija H. Matero ,  Antti Niskanen ,  Suvi P. Haukka ,  Eva Tois

    IPC分类号： H01L21/02 ,  C23C16/40 ,  H01L21/32 ,  C23C16/455

    摘要： Vapor deposition processes are provided in which a material is selectively deposited on a first surface of a substrate relative to a second organic surface. In some embodiments a substrate comprising a first surface, such as a metal, semi-metal or oxidized metal or semi-metal is contacted with a first vapor phase hydrophobic reactant and a second vapor phase reactant such that the material is deposited selectively on the first surface relative to the second organic surface. The second organic surface may comprise, for example, a self-assembled monolayer, a directed self-assembled layer, or a polymer, such as a polyimide, polyamide, polyurea or polystyrene. The material that is deposited may be, for example, a metal or metallic material. In some embodiments the material is a metal oxide, such as ZrO2 or HfO2. In some embodiments the vapor deposition process is a cyclic chemical vapor deposition (CVD) process or an atomic layer deposition (ALD) process. In some embodiments the material is deposited on the first surface relative to the second surface with a selectivity of greater than about 50%, greater than about 60%, greater than about 70%, greater than about 80%, greater than about 90% or greater than about 95%.