公开(公告)号：US12031206B2

公开(公告)日：2024-07-09

申请号：US17812488

申请日：2022-07-14

Applicant: ASM IP Holding, B.V.

Inventor： Maart van Druenen ,  Qi Xie ,  Charles Dezelah ,  Petro Deminskyi ,  Lifu Chen ,  Giuseppe Alessio Verni ,  Ren-Jie Chang

IPC: C23C16/14 ,  C23C16/18 ,  C23C16/44

CPC classification number: C23C16/14 ,  C23C16/18 ,  C23C16/4408

Abstract: Disclosed are methods and systems for depositing layers comprising a transition metal and a group 13 element. The layers are formed onto a surface of a substrate. The deposition process may be a cyclical deposition process. Exemplary structures in which the layers may be incorporated include field effect transistors, VNAND cells, metal-insulator-metal (MIM) structures, and DRAM capacitors.

公开(公告)号：US20220189775A1

公开(公告)日：2022-06-16

申请号：US17546186

申请日：2021-12-09

Applicant: ASM IP Holding B.V.

Inventor： Maart van Druenen ,  Charles Dezelah ,  Qi Xie ,  Petro Deminskyi ,  Giuseppe Alessio Verni ,  Ren-Jie Chang ,  Lifu Chen

IPC: H01L21/28 ,  H01L29/40 ,  H01L29/49 ,  C23C16/32

Abstract: Methods and systems for depositing rare earth metal carbide containing layers on a surface of a substrate and structures and devices formed using the methods are disclosed. An exemplary method includes using a cyclical deposition process such as an atomic layer deposition process for depositing a rare earth metal carbide containing layer onto a surface of the substrate.

公开(公告)号：US20250079156A1

公开(公告)日：2025-03-06

申请号：US18814949

申请日：2024-08-26

Applicant: ASM IP Holding B.V.

Inventor： Giuseppe Alessio Verni ,  Patricio Romero ,  Charles Dezelah ,  Suvidyakumar Vinod Homkar ,  Petro Deminskyi ,  Balaji Kannan ,  Michael Eugene Givens ,  Mikko Leander Nisula

IPC: H01L21/02 ,  C23C16/30 ,  C23C16/34 ,  C23C16/44 ,  C23C16/455 ,  C23C16/56 ,  H01L21/28

Abstract: The technology of the present disclosure generally relates to the field of semiconductor devices. More particularly, semiconductor structures comprising a dipole layer, which comprises a metal and nitrogen containing film, and a method for producing the same. Further described are related methods, deposition systems, and devices. The method for forming the semiconductor structure comprising a dipole layer, comprises the steps of providing a substrate to a reaction chamber; contacting one or more metal precursor on at least part of the substrate by introducing the metal precursor in the reaction chamber; and reacting the deposited metal precursor with a nitrogen reactant in the reaction chamber, thereby forming a metal and nitrogen containing film on at least part of the substrate.

公开(公告)号：US11873557B2

公开(公告)日：2024-01-16

申请号：US17504839

申请日：2021-10-19

Applicant: ASM IP Holding B.V.

Inventor： Charles Dezelah ,  Eric James Shero ,  Qi Xie ,  Giuseppe Alessio Verni ,  Petro Deminskyi

IPC: C23C16/06 ,  C23C16/455 ,  C23C16/52

CPC classification number: C23C16/45534 ,  C23C16/45553 ,  C23C16/52

Abstract: The manufacture of semiconductor devices may include methods of forming vanadium metal on a substrate. The methods comprise providing a substrate in a reaction chamber, providing a vanadium precursor to the reaction chamber in a vapor phase and providing a reducing agent to the reaction chamber in a vapor phase to form vanadium metal on the substrate.

公开(公告)号：US20220127724A1

公开(公告)日：2022-04-28

申请号：US17504839

申请日：2021-10-19

Applicant: ASM IP Holding B.V.

Inventor： Charles Dezelah ,  Eric James Shero ,  Qi Xie ,  Giuseppe Alessio Verni ,  Petro Deminskyi

IPC: C23C16/455 ,  C23C16/52

Abstract: The current disclosure relates to the manufacture of semiconductor devices, specifically to methods of forming vanadium metal on a substrate. The methods comprise providing a substrate in a reaction chamber, providing a vanadium precursor to the reaction chamber in a vapor phase and providing a reducing agent to the reaction chamber in a vapor phase to form vanadium metal on the substrate. The disclosure further relates to structures and devices formed by the methods, as well as to a deposition assembly.

公开(公告)号：US20250079182A1

公开(公告)日：2025-03-06

申请号：US18815935

申请日：2024-08-27

Applicant: ASM IP Holding B.V.

Inventor： Charles Dezelah ,  Petro Deminskyi

IPC: H01L21/311 ,  H01L21/32 ,  H01L21/3213 ,  H01L21/67

Abstract: The current disclosure relates to methods of etching a material. The method comprises method of etching material from a first surface of a material. In the method, the substrate having a first surface of a material is provided into a reaction chamber and an etching step is executed. The etching step comprises etching the first material by executing a plurality of etching cycles. Each etching cycle comprises an etching reactant pulse to expose the substrate to an etching reactant and an anneal pulse to expose the substrate to an anneal. The disclosure further relates to methods of forming a semiconductor device and to a semiconductor device. Further, the disclosure relates to a semiconductor processing system.

公开(公告)号：US12243747B2

公开(公告)日：2025-03-04

申请号：US17235985

申请日：2021-04-21

Applicant: ASM IP Holding B.V.

Inventor： Petro Deminskyi ,  Charles Dezelah ,  Jiyeon Kim ,  Giuseppe Alessio Verni ,  Maart Van Druenen ,  Qi Xie ,  Petri Räisänen

IPC: H01L21/28 ,  C23C16/38 ,  C23C16/455 ,  C23C16/50 ,  H01L29/49

Abstract: Methods and systems for depositing a layer, comprising one or more of vanadium boride and vanadium phosphide, onto a surface of a substrate and structures and devices formed using the methods are disclosed. An exemplary method includes using a deposition process. The deposition process can include providing a vanadium precursor to the reaction chamber and separately providing a reactant to the reaction chamber. Exemplary structures can include field effect transistor structures, such as gate all around structures. The layer comprising one or more of vanadium boride and vanadium phosphide can be used, for example, as barrier layers or liners, as work function layers, as dipole shifter layers, or the like.

公开(公告)号：US12159788B2

公开(公告)日：2024-12-03

申请号：US17546186

申请日：2021-12-09

Applicant: ASM IP Holding B.V.

Inventor： Maart van Druenen ,  Charles Dezelah ,  Qi Xie ,  Petro Deminskyi ,  Giuseppe Alessio Verni ,  Ren-Jie Chang ,  Lifu Chen

IPC: H01L21/28 ,  C23C16/32 ,  H01L29/40 ,  H01L29/49

Abstract: Methods and systems for depositing rare earth metal carbide containing layers on a surface of a substrate and structures and devices formed using the methods are disclosed. An exemplary method includes using a cyclical deposition process such as an atomic layer deposition process for depositing a rare earth metal carbide containing layer onto a surface of the substrate.

公开(公告)号：US20230015690A1

公开(公告)日：2023-01-19

申请号：US17812488

申请日：2022-07-14

Applicant: ASM IP Holding, B.V.

Inventor： Maart van Druenen ,  Qi Xie ,  Charles Dezelah ,  Petro Deminskyi ,  Lifu Chen ,  Giuseppe Alessio Verni ,  Ren-Jie Chang

IPC: C23C16/14 ,  C23C16/18 ,  C23C16/44

Abstract: Disclosed are methods and systems for depositing layers comprising a transition metal and a group 13 element. The layers are formed onto a surface of a substrate. The deposition process may be a cyclical deposition process. Exemplary structures in which the layers may be incorporated include field effect transistors, VNAND cells, metal-insulator-metal (MIM) structures, and DRAM capacitors.

公开(公告)号：US20250062128A1

公开(公告)日：2025-02-20

申请号：US18922849

申请日：2024-10-22

Applicant: ASM IP Holding B.V.

Inventor： Maart van Druenen ,  Charles Dezelah ,  Qi Xie ,  Petro Deminskyi ,  Giuseppe Alessio Verni ,  Ren-Jie Chang ,  Lifu Chen

IPC: H01L21/28 ,  C23C16/32 ,  H01L29/40 ,  H01L29/49

Abstract: Methods and systems for depositing rare earth metal carbide containing layers on a surface of a substrate and structures and devices formed using the methods are disclosed. An exemplary method includes using a cyclical deposition process such as an atomic layer deposition process for depositing a rare earth metal carbide containing layer onto a surface of the substrate.