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公开(公告)号：US10545410B2
公开(公告)日：2020-01-28
申请号：US16076743
申请日：2017-02-07
Applicant: ASML NETHERLANDS B.V.
Inventor： Hakki Ergun Cekli , Masashi Ishibashi , Leon Paul Van Dijk , Richard Johannes Franciscus Van Haren , Xing Lan Liu , Reiner Maria Jungblut , Cedric Marc Affentauschegg , Ronald Henricus Johannes Otten
Abstract: A lithographic process includes clamping a substrate onto a substrate support, measuring positions across the clamped substrate, and applying a pattern to the clamped substrate using the positions measured. A correction is applied to the positioning of the applied pattern in localized regions of the substrate, based on recognition of a warp-induced characteristic in the positions measured across the substrate. The correction may be generated by inferring one or more shape characteristics of the warped substrate using the measured positions and other information. Based on the one or more inferred shape characteristics, a clamping model is applied to simulate deformation of the warped substrate in response to clamping. A correction is calculated based on the simulated deformation.
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公开(公告)号：US12189308B2
公开(公告)日：2025-01-07
申请号：US18129169
申请日：2023-03-31
Applicant: ASML NETHERLANDS B.V.
Inventor： Richard Johannes Franciscus Van Haren , Leon Paul Van Dijk , Oktay Yildirim , Orion Jonathan Pierre Mouraille
Abstract: A method for determining a target feature in a model of a patterning process based on local electric fields estimated for the patterning process. The method includes obtaining a mask stack region of interest. The mask stack region of interest has one or more characteristics associated with propagation of electromagnetic waves through the mask stack region of interest. The mask stack region of interest includes the target feature. The method includes estimating a local electric field based on the one or more characteristics associated with the propagation of electromagnetic waves through the mask stack region of interest. The local electric field is estimated for a portion of the mask stack region of interest in proximity to the target feature. The method includes determining the target feature based on the estimated local electric field.
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公开(公告)号：US10788761B2
公开(公告)日：2020-09-29
申请号：US16344831
申请日：2017-10-17
Applicant: ASML NETHERLANDS B.V.
Inventor： Leon Paul Van Dijk , Victor Emanuel Calado , Xing Lan Liu , Richard Johannes Franciscus Van Haren
Abstract: A method of determining an optimal operational parameter setting of a metrology system is described. Free-form substrate shape measurements are performed. A model is applied, transforming the measured warp to modeled warp scaling values. Substrates are clamped to a chuck, causing substrate deformation. Alignment marks of the substrates are measured using an alignment system with four alignment measurement colors. Scaling values thus obtained are corrected with the modeled warp scaling values to determine corrected scaling values. An optimal alignment measurement color is determined, based on the corrected scaling values. Optionally, scaling values are selected that were measured using the optimal alignment measurement color and a substrate grid is determined using the selected scaling values. A substrate may be exposed using the determined substrate grid to correct exposure of the substrate.
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公开(公告)号：US11300889B2
公开(公告)日：2022-04-12
申请号：US17267974
申请日：2019-07-03
Applicant: ASML NETHERLANDS B.V.
Inventor： Leon Paul Van Dijk , Richard Johannes Franciscus Van Haren , Subodh Singh , Ilya Malakhovsky , Ronald Henricus Johannes Otten , Amandev Singh
IPC: G03F7/20
Abstract: Methods and apparatuses for determining in-plane distortion (IPD) across a substrate having a plurality of patterned regions. A method includes obtaining intra-region data indicative of a local stress distribution across one of the plurality of patterned regions; determining, based on the intra-region data, inter-region data indicative of a global stress distribution across the substrate; and determining, based on the inter-region data, the IPD across the substrate.
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公开(公告)号：US11226567B2
公开(公告)日：2022-01-18
申请号：US16638552
申请日：2018-08-08
Applicant: ASML NETHERLANDS B.V.
Inventor： Richard Johannes Franciscus Van Haren , Leon Paul Van Dijk , Ilya Malakhovsky , Ronald Henricus Johannes Otten , Mahdi Sadeghinia
Abstract: Methods and associated apparatus for reconstructing a free-form geometry of a substrate, the method including: positioning the substrate on a substrate holder configured to retain the substrate under a retaining force that deforms the substrate from its free-form geometry; measuring a height map of the deformed substrate; and reconstructing the free-form geometry of the deformed substrate based on an expected deformation of the substrate by the retaining force and the measured height map.
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Patent Agency Ranking
公开(公告)号：US10474045B2
公开(公告)日：2019-11-12
申请号：US15737990
申请日：2016-06-28
Applicant: ASML NETHERLANDS B.V.
Inventor： Franciscus Godefridus Casper Bijnen , Arie Jeffrey Den Boef , Richard Johannes Franciscus Van Haren , Patricius Aloysius Jacobus Tinnemans , Alexander Ypma , Irina Anatolievna Lyulina , Edo Maria Hulsebos , Hakki Ergün Cekli , Xing Lan Liu , Loek Johannes Petrus Verhees , Victor Emanuel Calado , Leon Paul Van Dijk
Abstract: A method of characterizing a deformation of a plurality of substrates is described. The method includes: measuring, for a plurality of n different alignment measurement parameters λ and for a plurality of substrates, a position of the alignment marks; determining a positional deviation as the difference between the n alignment mark position measurements and a nominal alignment mark position; grouping the positional deviations into data sets; determining an average data set; subtracting the average data set from the data sets to obtain a plurality of variable data sets; performing a blind source separation method on the variable data sets, thereby decomposing the variable data sets into a set of eigenwafers representing principal components of the variable data sets; and subdividing the set of eigenwafers into a set of mark deformation eigenwafers and a set of substrate deformation eigenwafers.
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公开(公告)号：US11619884B2
公开(公告)日：2023-04-04
申请号：US17298640
申请日：2019-11-12
Applicant: ASML NETHERLANDS B.V.
Inventor： Richard Johannes Franciscus Van Haren , Leon Paul Van Dijk , Oktay Yildirim , Orion Jonathan Pierre Mouraille
Abstract: A method for determining a target feature in a model of a patterning process based on local electric fields estimated for the patterning process is described. The method includes obtaining a mask stack region of interest. The mask stack region of interest has one or more characteristics associated with propagation of electromagnetic waves through the mask stack region of interest. The mask stack region of interest includes the target feature. The method includes estimating a local electric field based on the one or more characteristics associated with the propagation of electromagnetic waves through the mask stack region of interest. The local electric field is estimated for a portion of the mask stack region of interest in proximity to the target feature. The method includes determining the target feature based on the estimated local electric field.
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公开(公告)号：US11320750B2
公开(公告)日：2022-05-03
申请号：US17032249
申请日：2020-09-25
Applicant: ASML NETHERLANDS B.V.
Inventor： Leon Paul Van Dijk , Victor Emanuel Calado , Xing Lan Liu , Richard Johannes Franciscus Van Haren
Abstract: A method of determining an optimal operational parameter setting of a metrology system is described. Free-form substrate shape measurements are performed. A model is applied, transforming the measured warp to modeled warp scaling values. Substrates are clamped to a chuck, causing substrate deformation. Alignment marks of the substrates are measured using an alignment system with four alignment measurement colors. Scaling values thus obtained are corrected with the modeled warp scaling values to determine corrected scaling values. An optimal alignment measurement color is determined, based on the corrected scaling values. Optionally, scaling values are selected that were measured using the optimal alignment measurement color and a substrate grid is determined using the selected scaling values. A substrate may be exposed using the determined substrate grid to correct exposure of the substrate.
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公开(公告)号：US11300887B2
公开(公告)日：2022-04-12
申请号：US16463057
申请日：2017-11-06
Applicant: ASML NETHERLANDS B.V.
Inventor： Richard Johannes Franciscus Van Haren , Victor Emanuel Calado , Leon Paul Van Dijk , Roy Werkman , Everhardus Cornelis Mos , Jochem Sebastiaan Wildenberg , Marinus Jochemsen , Bijoy Rajasekharan , Erik Jensen , Adam Jan Urbanczyk
IPC: G03F7/20
Abstract: A method to change an etch parameter of a substrate etching process, the method including: making a first measurement of a first metric associated with a structure on a substrate before being etched; making a second measurement of a second metric associated with a structure on a substrate after being etched; and changing the etch parameter based on a difference between the first measurement and the second measurement.
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公开(公告)号：US12254392B2
公开(公告)日：2025-03-18
申请号：US17423658
申请日：2019-12-12
Applicant: ASML NETHERLANDS B.V.
Inventor： Faegheh Hasibi , Leon Paul Van Dijk , Maialen Larranaga , Alexander Ypma , Richard Johannes Franciscus Van Haren
IPC: G06F30/398 , G03F7/00 , G06F30/27 , G06N3/04 , G06F119/18 , G06N3/0464
Abstract: A method for predicting a property associated with a product unit. The method may include: obtaining a plurality of data sets, wherein each of the plurality of data sets includes data associated with a spatial distribution of a parameter across the product unit; representing each of the plurality of data sets as a multidimensional object; obtaining a convolutional neural network model trained with previously obtained multidimensional objects and properties of previous product units; and applying the convolutional neural network model to the plurality of multidimensional objects representing the plurality of data sets, to predict the property associated with the product unit.
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