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公开(公告)号：US11982946B2
公开(公告)日：2024-05-14
申请号：US17628668
申请日：2020-07-06
Applicant: ASML NETHERLANDS B.V. , ASML HOLDING N.V.
Inventor： Nikhil Mehta , Maurits Van Der Schaar , Markus Gerardus Martinus Maria Van Kraaij , Hugo Augustinus Joseph Cramer , Olger Victor Zwier , Jeroen Cottaar , Patrick Warnaar
IPC: G03F7/20 , G01N21/956 , G03F1/84 , G03F7/00
CPC classification number: G03F7/70625 , G01N21/956 , G03F1/84 , G03F7/70633
Abstract: A patterning device for patterning product structures onto a substrate and an associated substrate patterned using such a patterning device. The patterning device includes target patterning elements for patterning at least one target from which a parameter of interest can be inferred. The patterning device includes product patterning elements for patterning the product structures. The target patterning elements and product patterning elements are configured such that the at least one target has at least one boundary which is neither parallel nor perpendicular with respect to the product structures on the substrate.
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公开(公告)号：US20210325174A1
公开(公告)日：2021-10-21
申请号：US17314469
申请日：2021-05-07
Applicant: ASML Netherlands B.V.
Inventor： Patricius Aloysius Jacobus TINNEMANS , Vasco Tomas Tenner , Arie Jeffrey Den Boef , Hugo Augustinus Joseph Cramer , Patrick Warnaar , Grzegorz Grzela , Martin Jacobus Johan Jak
Abstract: Disclosed is a method and associated apparatus for measuring a characteristic of interest relating to a structure on a substrate. The method comprises calculating a value for the characteristic of interest directly from the effect of the characteristic of interest on at least the phase of illuminating radiation when scattered by the structure, subsequent to illuminating said structure with said illuminating radiation.
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公开(公告)号：US11003099B2
公开(公告)日：2021-05-11
申请号：US16593132
申请日：2019-10-04
Applicant: ASML Netherlands B.V.
Inventor： Maurits Van Der Schaar , Murat Bozkurt , Patrick Warnaar , Stefan Cornelis Theodorus Van Der Sanden
IPC: G03F9/00 , G03F7/20 , G01N21/956
Abstract: A method and apparatus are described for providing an accurate and robust measurement of a lithographic characteristic or metrology parameter. The method includes providing a range or a plurality of values for each of a plurality of metrology parameters of a metrology target, providing a constraint for each of the plurality of metrology parameters, and calculating, by a processor to optimize/modify these parameters within the range of the plurality of values, resulting in a plurality of metrology target designs having metrology parameters meeting the constraints.
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公开(公告)号：US10474043B2
公开(公告)日：2019-11-12
申请号：US15841811
申请日：2017-12-14
Applicant: ASML Netherlands B.V.
Inventor： Patrick Warnaar , Maurits Van Der Schaar , Grzegorz Grzela , Erik Johan Koop , Victor Emanuel Calado , Si-Han Zeng
Abstract: A method of measuring a property of a substrate, the substrate having a plurality of targets formed thereon, the method comprising: measuring N targets of the plurality of targets using an optical measurement system, where N is an integer greater than 2 and each of said N targets is measured Wt times, where Wt is an integer greater than 2 so as to obtain N*Wt measurement values; and determining R property values using Q equations and the N*Wt measurement values, where R
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公开(公告)号：US09869940B2
公开(公告)日：2018-01-16
申请号：US15133866
申请日：2016-04-20
Applicant: ASML Netherlands B.V.
Inventor： Si-Han Zeng , Yue-Lin Peng , Jen-Yu Fang , Arie Jeffrey Den Boef , Alexander Straaijer , Ching-Yi Hung , Patrick Warnaar
CPC classification number: G03F7/70633 , G01B11/24 , G01B11/272
Abstract: Disclosed are a method, computer program and associated apparatuses for measuring a parameter of a lithographic process. The method comprising the steps of: obtaining first measurements comprising measurements of structural asymmetry relating to a plurality of first structures, each of said plurality of measurements of structural asymmetry corresponding to a different measurement combination of measurement radiation and a value for at least a first parameter; obtaining a plurality of second measurements of target asymmetry relating to a plurality of targets, each of said plurality of measurements of target asymmetry corresponding to one of said different measurement combinations, determining a relationship function describing the relationship between said first measurements and said second measurements, for each of said measurement combinations; determining, from said relationship function, a corrected overlay value, said corrected overlay value being corrected for structural contribution due to structural asymmetry in at least said first structure.
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Patent Agency Ranking
公开(公告)号：US20160011523A1
公开(公告)日：2016-01-14
申请号：US14794013
申请日：2015-07-08
Applicant: ASML Netherlands B.V.
Inventor： Amandev SINGH , Henricus Petrus Maria Pellemans , Patrick Warnaar
CPC classification number: G03F7/70491 , G01J3/2823 , G01J3/45 , G01N21/4788 , G01N2201/06113 , G03F7/70625 , G03F7/70633
Abstract: Inspection apparatus (100) is used for measuring parameters of targets on a substrate. Coherent radiation follows an illumination path (solid rays) for illuminating target (T). A collection path (dashed rays) collects diffracted radiation from the target and delivers it to a lock-in image detector (112). A reference beam following a reference path (dotted rays). An acousto-optical modulator (108) shifts the optical frequency of the reference beam so that the intensity of radiation at the lock-in detector includes a time-varying component having a characteristic frequency corresponding to a difference between the frequencies of the diffracted radiation and the reference radiation. The lock-in image detector records two-dimensional image information representing both amplitude and phase of the time-varying component. A second reference beam with a different shift (110) follows a second reference path (dot-dash rays). Interference between the two reference beams can be used for intensity normalization.
Abstract translation: 检查装置（100）用于测量基板上的目标的参数。 相干辐射遵循用于照射目标（T）的照明路径（固体光线）。 收集路径（虚线）从目标物体收集衍射辐射并将其传送到锁定图像检测器（112）。 参考光束遵循参考路径（虚线）。 声光调制器（108）移动参考光束的光频率，使得锁定检测器处的辐射强度包括具有与衍射辐射的频率之间的差异相对应的特征频率的时变分量，以及 参考辐射。 锁定图像检测器记录表示时变分量的幅度和相位的二维图像信息。 具有不同偏移（110）的第二参考光束遵循第二参考路径（点划线）。 两个参考光束之间的干涉可用于强度归一化。
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公开(公告)号：US11650047B2
公开(公告)日：2023-05-16
申请号：US17314469
申请日：2021-05-07
Applicant: ASML Netherlands B.V.
Inventor： Patricius Aloysius Jacobus Tinnemans , Vasco Tomas Tenner , Arie Jeffrey Den Boef , Hugo Augustinus Joseph Cramer , Patrick Warnaar , Grzegorz Grzela , Martin Jacobus Johan Jak
CPC classification number: G01B11/2536 , G02B27/4233 , G02B27/4272 , G03F7/705 , G03F7/7065 , G03F7/7085 , G03F7/70508 , G03F7/70633 , G03H1/0005 , G03H1/0443 , G03H2001/0445
Abstract: Disclosed is a method and associated apparatus for measuring a characteristic of interest relating to a structure on a substrate. The method comprises calculating a value for the characteristic of interest directly from the effect of the characteristic of interest on at least the phase of illuminating radiation when scattered by the structure, subsequent to illuminating said structure with said illuminating radiation.
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公开(公告)号：US11513442B2
公开(公告)日：2022-11-29
申请号：US16644206
申请日：2018-08-22
Applicant: ASML NETHERLANDS B.V.
Inventor： Wim Tjibbo Tel , Mark John Maslow , Koenraad Van Ingen Schenau , Patrick Warnaar , Abraham Slachter , Roy Anunciado , Simon Hendrik Celine Van Gorp , Frank Staals , Marinus Jochemsen
IPC: G03F7/00 , G03F1/00 , G06T7/00 , H01L21/00 , G06F30/20 , G21K5/00 , G03F7/20 , H01L21/66 , G06F119/18
Abstract: A method for determining a metric of a feature on a substrate obtained by a semiconductor manufacturing process involving a lithographic process, the method including: obtaining an image of at least part of the substrate, wherein the image includes at least the feature; determining a contour of the feature from the image; determining a plurality of segments of the contour; determining respective weights for each of the plurality of segments; determining, for each of the segments, an image-related metric; and determining the metric of the feature in dependence on the weights and the calculated image-related metric of each of the segments.
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公开(公告)号：US11181828B2
公开(公告)日：2021-11-23
申请号：US16601778
申请日：2019-10-15
Applicant: ASML NETHERLANDS B.V.
Inventor： Patrick Warnaar , Hilko Dirk Bos , Hendrik Jan Hidde Smilde , Mohammadreza Hajiahmadi , Lukasz Jerzy Macht , Karel Hendrik Wouter Van Den Bos , Sergei Sokolov , Lucas Tijn Kunneman
Abstract: Techniques for determining a value of a parameter of interest of a patterning process are described. One such technique involves obtaining a plurality of calibration data units from one or more targets in a metrology process. Each calibration data unit of at least two of the calibration data units represents detected radiation obtained using different respective polarization settings in the metrology process, each polarization setting defining a polarization property of incident radiation of the metrology process and of detected radiation of the metrology process. The calibration data units are used to obtain calibration information about the metrology process. A measurement data unit representing detected radiation scattered from a further target is obtained, the further target having a structure formed using the patterning process on the substrate or on a further substrate. A value of the parameter of interest is determined using the measurement data unit and the obtained calibration information.
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10.发明授权公开(公告)号：US10816909B2
公开(公告)日：2020-10-27
申请号：US16150879
申请日：2018-10-03
Applicant: ASML Netherlands B.V.
Inventor： Patricius Aloysius Jacobus Tinnemans , Arie Jeffrey Den Boef , Armand Eugene Albert Koolen , Nitesh Pandey , Vasco Tomas Tenner , Willem Marie Julia Marcel Coene , Patrick Warnaar
Abstract: Described is a metrology system for determining a characteristic of interest relating to at least one structure on a substrate, and associated method. The metrology system comprises a processor being configured to computationally determine phase and amplitude information from a detected characteristic of scattered radiation having been reflected or scattered by the at least one structure as a result of illumination of said at least one structure with illumination radiation in a measurement acquisition, and use the determined phase and amplitude to determine the characteristic of interest.
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