公开(公告)号：US20140239494A1

公开(公告)日：2014-08-28

申请号：US14192029

申请日：2014-02-27

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Kuo-Hua CHEN ,  Tzu-Hua LIN ,  Kuan-Neng CHEN ,  Yan-Pin HUANG

IPC: H01L23/498 ,  H01L23/00 ,  H01L23/532

CPC classification number: H01L24/11 ,  H01L21/563 ,  H01L23/3128 ,  H01L23/49816 ,  H01L23/49827 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/05022 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05572 ,  H01L2224/13082 ,  H01L2224/13111 ,  H01L2224/13118 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13149 ,  H01L2224/13155 ,  H01L2224/13157 ,  H01L2224/13164 ,  H01L2224/13166 ,  H01L2224/13169 ,  H01L2224/13176 ,  H01L2224/13178 ,  H01L2224/16146 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2224/16501 ,  H01L2224/73204 ,  H01L2224/75251 ,  H01L2224/75252 ,  H01L2224/81193 ,  H01L2224/81203 ,  H01L2224/8183 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06568 ,  H01L2924/15788 ,  H01L2924/00014 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/00

Abstract: The disclosure relates to a semiconductor bonding structure and process and a semiconductor chip. The semiconductor bonding structure includes a first pillar, a first interface, an intermediate area, a second interface and a second pillar in sequence. The first pillar, the second pillar and the intermediate area include a first metal. The first interface and the second interface include the first metal and an oxide of a second metal. The content percentage of the first metal in the first interface and the second interface is less than that of the first metal in the intermediate area.

Abstract translation: 本公开涉及半导体接合结构和工艺以及半导体芯片。 半导体接合结构依次包括第一柱，第一界面，中间区域，第二界面和第二柱。 第一支柱，第二支柱和中间区域包括第一金属。 第一界面和第二界面包括第一金属和第二金属的氧化物。 第一界面和第二界面中的第一金属的含量百分比小于中间区域中的第一金属的含量百分比。