公开(公告)号：US20160240503A1

公开(公告)日：2016-08-18

申请号：US14622494

申请日：2015-02-13

申请人： Advanced Semiconductor Engineering, Inc.

发明人： Min-Fong Shu ,  Yi-Hsiu TSENG ,  Kuan-Neng CHEN ,  Shu-Chiao KUO

IPC分类号： H01L23/00 ,  H01L23/31 ,  H01L23/498

CPC分类号： H01L24/81 ,  H01L21/4853 ,  H01L21/563 ,  H01L23/13 ,  H01L23/3142 ,  H01L23/3185 ,  H01L23/49811 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/49833 ,  H01L23/49838 ,  H01L23/564 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L24/32 ,  H01L24/73 ,  H01L24/83 ,  H01L2224/0401 ,  H01L2224/05558 ,  H01L2224/05609 ,  H01L2224/05611 ,  H01L2224/05618 ,  H01L2224/05623 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05657 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/05671 ,  H01L2224/05672 ,  H01L2224/05676 ,  H01L2224/05678 ,  H01L2224/1182 ,  H01L2224/13026 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/13582 ,  H01L2224/13609 ,  H01L2224/13611 ,  H01L2224/13618 ,  H01L2224/13623 ,  H01L2224/13624 ,  H01L2224/13639 ,  H01L2224/13644 ,  H01L2224/13655 ,  H01L2224/13657 ,  H01L2224/13663 ,  H01L2224/13664 ,  H01L2224/13666 ,  H01L2224/13676 ,  H01L2224/13678 ,  H01L2224/13687 ,  H01L2224/1607 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2224/16237 ,  H01L2224/16238 ,  H01L2224/16501 ,  H01L2224/32225 ,  H01L2224/73104 ,  H01L2224/73204 ,  H01L2224/81096 ,  H01L2224/8114 ,  H01L2224/81191 ,  H01L2224/81203 ,  H01L2224/81385 ,  H01L2224/81395 ,  H01L2224/81409 ,  H01L2224/81411 ,  H01L2224/81418 ,  H01L2224/81423 ,  H01L2224/81424 ,  H01L2224/81439 ,  H01L2224/81444 ,  H01L2224/81447 ,  H01L2224/81455 ,  H01L2224/81457 ,  H01L2224/81463 ,  H01L2224/81464 ,  H01L2224/81466 ,  H01L2224/81476 ,  H01L2224/81478 ,  H01L2224/81487 ,  H01L2224/81815 ,  H01L2224/8183 ,  H01L2224/81898 ,  H01L2224/83104 ,  H01L2224/83193 ,  H01L2224/92125 ,  H01L2924/00015 ,  H01L2924/15311 ,  H01L2924/20103 ,  H01L2924/20104 ,  H01L2924/20105 ,  H01L2924/3511 ,  H01L2924/381 ,  H01L2224/8109 ,  H01L2924/00014 ,  H01L2924/01076 ,  H01L2924/014 ,  H01L2924/00012 ,  H01L2924/053

摘要： The present disclosure relates to bonding structures useful in semiconductor packages and methods of manufacturing the same. In an embodiment, the bonding structure comprises a substrate, having a top surface and including at least one bonding pad, wherein each bonding pad is disposed adjacent to the top surface of the substrate and has a sloped surface; and a semiconductor element including at least one pillar, wherein each pillar is bonded to a portion of the sloped surface of a corresponding bonding pad, and a gap is formed between a sidewall of the pillar and the sloped surface of the corresponding bonding pad.

摘要翻译： 本公开涉及可用于半导体封装的结合结构及其制造方法。 在一个实施例中，接合结构包括具有顶表面并且包括至少一个焊盘的衬底，其中每个接合焊盘邻近衬底的顶表面设置并具有倾斜表面; 以及包括至少一个柱的半导体元件，其中每个柱结合到相应焊盘的倾斜表面的一部分，并且在所述柱的侧壁和相应的焊盘的倾斜表面之间形成间隙。

公开(公告)号：US20140239494A1

公开(公告)日：2014-08-28

申请号：US14192029

申请日：2014-02-27

申请人： Advanced Semiconductor Engineering, Inc.

发明人： Kuo-Hua CHEN ,  Tzu-Hua LIN ,  Kuan-Neng CHEN ,  Yan-Pin HUANG

IPC分类号： H01L23/498 ,  H01L23/00 ,  H01L23/532

CPC分类号： H01L24/11 ,  H01L21/563 ,  H01L23/3128 ,  H01L23/49816 ,  H01L23/49827 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/05022 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05572 ,  H01L2224/13082 ,  H01L2224/13111 ,  H01L2224/13118 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13149 ,  H01L2224/13155 ,  H01L2224/13157 ,  H01L2224/13164 ,  H01L2224/13166 ,  H01L2224/13169 ,  H01L2224/13176 ,  H01L2224/13178 ,  H01L2224/16146 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2224/16501 ,  H01L2224/73204 ,  H01L2224/75251 ,  H01L2224/75252 ,  H01L2224/81193 ,  H01L2224/81203 ,  H01L2224/8183 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06568 ,  H01L2924/15788 ,  H01L2924/00014 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/00

摘要： The disclosure relates to a semiconductor bonding structure and process and a semiconductor chip. The semiconductor bonding structure includes a first pillar, a first interface, an intermediate area, a second interface and a second pillar in sequence. The first pillar, the second pillar and the intermediate area include a first metal. The first interface and the second interface include the first metal and an oxide of a second metal. The content percentage of the first metal in the first interface and the second interface is less than that of the first metal in the intermediate area.

摘要翻译： 本公开涉及半导体接合结构和工艺以及半导体芯片。 半导体接合结构依次包括第一柱，第一界面，中间区域，第二界面和第二柱。 第一支柱，第二支柱和中间区域包括第一金属。 第一界面和第二界面包括第一金属和第二金属的氧化物。 第一界面和第二界面中的第一金属的含量百分比小于中间区域中的第一金属的含量百分比。