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    Ceramic substrate and preparation of the same
    1.
    发明授权
    Ceramic substrate and preparation of the same 失效
    陶瓷基材及其制备方法相同

    公开(公告)号：US5165981A

    公开(公告)日：1992-11-24

    申请号：US746093

    申请日：1991-08-12

    申请人： Akira Yamakawa ,  Tadashi Igarashi

    发明人： Akira Yamakawa ,  Tadashi Igarashi

    IPC分类号： G11B5/31 ,  H01F10/28 ,  H01F41/20

    CPC分类号： H01F10/28 ,  G11B5/31 ,  H01F41/20 ,  Y10T428/24355 ,  Y10T428/24942 ,  Y10T428/24983 ,  Y10T428/263 ,  Y10T428/265

    摘要： A ceramic substrate which comprises a ceramic base material having porosity of not more than 5% and surface roughness R.sub.max of not larger than 0.1 .mu.m, and an amorphous aluminum oxide film having thickness of 1 to 50 .mu.m formed on a surface of said ceramic base material, has high reliability and can be easily surface finished with high accuracy and can be used to form a thin film magnetic circuit.

    摘要翻译： 一种陶瓷基板，其特征在于，具有孔隙率为5％以下，表面粗糙度Rmax为0.1μm以下的陶瓷基材，以及形成在所述陶瓷的表面上的厚度为1〜50μm的无定形氧化铝膜 基材，具有高可靠性，可以高精度地进行表面精加工，可用于形成薄膜磁路。

    Ceramic porous bodies and method of producing the same
    4.
    发明授权
    Ceramic porous bodies and method of producing the same 失效

    公开(公告)号：US5759460A

    公开(公告)日：1998-06-02

    申请号：US820133

    申请日：1997-03-19

    申请人： Koichi Niihara ,  Akira Yamakawa

    发明人： Koichi Niihara ,  Akira Yamakawa

    IPC分类号： C04B35/571 ,  C04B35/589 ,  C04B38/00 ,  C04B38/06 ,  B29C67/04

    CPC分类号： C04B38/0051 ,  C04B38/00 ,  C04B38/0022

    摘要： A ceramic porous body composed principally of silicon carbide or silicon nitride which has higher strength, higher heat resistance and higher thermal shock resistance and has a large number of fine pores, and a method of producing the same. The ceramic porous body, comprised principally of silicon carbide or silicon nitride, has a pore diameter of not more than 1 .mu.m, with a porosity of not less than 35%, and has a flexural strength of not less than 100 MPa. The ceramic porous body is produced by using a silicon oligomer which is capable of producing silicon carbide or silicon nitride when calcined, mixing the silicon oligomer with a silicon carbide powder or silicon nitride powder, and/or other ceramic powder which has a mean particle diameter of not more than 1.0 .mu.m, molding the mixture into shape, then sintering the molding in a suitable atmosphere at temperatures of not less than 1200.degree. C.

    Ceramic porous bodies and method of producing the same
    5.
    发明授权
    Ceramic porous bodies and method of producing the same 失效
    陶瓷多孔体及其制造方法

    公开(公告)号：US5750449A

    公开(公告)日：1998-05-12

    申请号：US771431

    申请日：1996-12-20

    申请人： Koichi Niihara ,  Akira Yamakawa

    发明人： Koichi Niihara ,  Akira Yamakawa

    IPC分类号： C04B35/571 ,  C04B35/589 ,  C04B38/00 ,  C04B38/06 ,  C04B35/56 ,  C04B35/58

    CPC分类号： C04B38/0051 ,  C04B38/00 ,  C04B38/0022

    摘要： A ceramic porous body composed principally of silicon carbide or silicon nitride which has higher strength, higher heat resistance and higher thermal shock resistance and has a large number of fine pores, and a method of producing the same. The ceramic porous body, comprised principally of silicon carbide or silicon nitride, has a pore diameter of not more than 1 .mu.m, with a porosity of not less than 35%, and has a flexural strength of not less than 100 MPa. The ceramic porous body is produced by using a silicon oligomer which is capable of producing silicon carbide or silicon nitride when calcined, mixing the silicon oligomer with a silicon carbide powder or silicon nitride powder, and/or other ceramic powder which has a mean particle diameter of not more than 1.0 .mu.m, molding the mixture into shape, then sintering the molding in a suitable atmosphere at temperatures of not less than 1200.degree. C.

    摘要翻译： 主要由碳化硅或氮化硅组成的陶瓷多孔体及其制造方法，该陶瓷多孔体具有较高的强度，较高的耐​​热性和较高的耐热冲击性，并且具有大量的细孔。 主要由碳化硅或氮化硅组成的陶瓷多孔体的孔径不大于1μm，孔隙率不小于35％，弯曲强度不低于100MPa。 陶瓷多孔体是通过使用能够在煅烧时制造碳化硅或氮化硅的硅低聚物来制造的，所述硅低聚物与碳化硅粉末或氮化硅粉末混合，和/或具有平均粒径的其它陶瓷粉末 不大于1.0μm，将混合物成形，然后在不低于1200℃的温度下在合适的气氛中烧结成型。

    Ceramic porous body and method for preparing the same
    6.
    发明授权
    Ceramic porous body and method for preparing the same 失效
    陶瓷多孔体及其制备方法

    公开(公告)号：US5696042A

    公开(公告)日：1997-12-09

    申请号：US531668

    申请日：1995-09-21

    申请人： Takahiro Matsuura ,  Chihiro Kawai ,  Akira Yamakawa

    发明人： Takahiro Matsuura ,  Chihiro Kawai ,  Akira Yamakawa

    IPC分类号： F01N3/02 ,  B01D39/20 ,  C04B35/626 ,  C04B38/00 ,  C04B35/584

    CPC分类号： C04B38/00 ,  C04B38/0051 ,  C04B2111/00793 ,  C04B2111/0081

    摘要： A ceramic porous body for a filter or a catalyst carrier, having a structure in which voids each having the same volume as that of a sphere of 10 .mu.m to 500 .mu.m in diameter are formed and the voids are communicated with each other through smaller fine pores, the ceramic porous body having a volume fraction of the voids and the fine pores of from 15% to 60% and being formed of components 70% or higher by volume of which is silicon nitride. The ceramic porous body is prepared by mixing coarse silicon nitride powder with fine silicon nitride powder(s) at a mixing ratio by volume of the fine silicon nitride powder to the combined volume of the fine and coarse silicon nitride powders in the range of 1/99 to 1/2; adding one or more compounds of the group IIa elements, the group IIIa elements, transition metals, Al and Si in a range of 1% to 30% by volume as their oxides to the silicon nitride powder mixture; molding the resultant powder mixture; and sintering the molded body in a non-oxidizing atmosphere of at least 0.9 atm at a temperature ranging from 1100.degree. C. to 2000.degree. C.

    摘要翻译： 一种用于过滤器或催化剂载体的陶瓷多孔体，其结构是形成具有与直径为10μm至500μm的球体相同体积的空隙，并且空隙通过较小的相互连通 细孔，陶瓷多孔体的空隙体积分数和细孔为15％〜60％，由体积为70％以上的成分形成为氮化硅。 陶瓷多孔体是通过将氮化硅粉末与氮化硅微粉末的混合比例与氮化硅细粉末的体积比与在+ E范围内的微细和粗大的氮化硅粉末的组合体积进行混合来制备的 ，1/99 + EE至+ E，fra 1/2 + EE; 将一种或多种IIa族元素，IIIa族元素，过渡金属，Al和Si的化合物作为其氧化物以1体积％至30体积％的范围添加到氮化硅粉末混合物中; 模制所得粉末混合物; 并在1100〜2000℃的温度下在至少0.9atm的非氧化性气氛中烧结成型体。

    Combination of adjusting shim and cam
    7.
    发明授权
    Combination of adjusting shim and cam 失效
    调整垫片和凸轮的组合

    公开(公告)号：US5647313A

    公开(公告)日：1997-07-15

    申请号：US327313

    申请日：1994-10-21

    申请人： Hiromu Izumida ,  Kaoru Murabe ,  Takao Nishioka ,  Akira Yamakawa ,  Kenji Matsunuma

    发明人： Hiromu Izumida ,  Kaoru Murabe ,  Takao Nishioka ,  Akira Yamakawa ,  Kenji Matsunuma

    IPC分类号： F01L1/04 ,  F01L1/047 ,  F01L1/14 ,  F01L1/16 ,  F01L1/20 ,  F02F7/00 ,  F16H53/06

    CPC分类号： F02F7/0087 ,  F01L1/047 ,  F01L1/16 ,  F01L1/205 ,  F01L2009/0411 ,  F05C2253/16

    摘要： A combination of an adjusting shim and a cam used in a valve train in an internal combustion engine for automobiles, the adjusting shim composed of a ceramic material which sets the surface roughness of a sliding surface of the adjusting shim with respect to a cam to not more than 0.1 .mu.m in ten-point mean roughness Rz, and which contains not less than 60 vol. % of silicon nitride or sialon, and the cam composed of cast iron a surface of which is chill hardened and then provided with a phosphate film thereon. The combination of an adjusting shim and a cam is capable of smoothing a sliding surface of the cam by the break-in of the part even if the cam is not subjected to a super-precision finishing process; preventing the seizure and abnormal abrasion of sliding surfaces; stabilizing a smoothed condition of the sliding surfaces of the cam and shim for a long period of time; and providing excellent sliding characteristics of the sliding surfaces owing to a decrease in the friction coefficient thereof.

    摘要翻译： 用于汽车内燃机的气门机构中使用的调节垫片和凸轮的组合，由陶瓷材料组成的调节垫片，其将调节垫片的滑动表面的表面粗糙度相对于凸轮设置为不 十点平均粗糙度Rz超过0.1μm，含有不低于60vol。 ％的氮化硅或赛隆，以及由铸铁组成的凸轮，其表面被冷却硬化，然后在其上提供磷酸盐膜。 调整垫片和凸轮的组合能够通过零件的插入来平滑凸轮的滑动表面，即使凸轮不经受超精密精加工过程; 防止滑动表面的卡住和异常磨损; 稳定凸轮和垫片的滑动表面的平滑状态长时间; 并且由于其摩擦系数的降低而提供滑动表面的优异的滑动特性。

    Method of manufacturing a ceramics-type vacuum vessel
    8.
    发明授权
    Method of manufacturing a ceramics-type vacuum vessel 失效
    制造陶瓷型真空容器的方法

    公开(公告)号：US5603788A

    公开(公告)日：1997-02-18

    申请号：US457013

    申请日：1995-06-01

    申请人： Tetsuya Abe ,  Yoshio Murakami ,  Hisao Takeuchi ,  Akira Yamakawa ,  Masaya Miyake

    发明人： Tetsuya Abe ,  Yoshio Murakami ,  Hisao Takeuchi ,  Akira Yamakawa ,  Masaya Miyake

    IPC分类号： C04B37/00 ,  F16J12/00 ,  H05H7/14 ,  B32B31/12 ,  B32B31/26

    CPC分类号： H05H7/14

    摘要： A vacuum vessel is provided in which the majority of a vessel wall including an annular wall portion (1) and a plate-wall portion (2) is formed of ceramic material such as silicon nitride, for example. To bond the plural wall members together, bonding faces having a surface flatness of not more than 1 .mu.m are prepared thereon, and then a ceramic powder bonding substance with an average particle diameter of not more than 1 .mu.m is interposed between adjacent bonding faces and subjected to heating. Because the generation of gas, such as hydrogen, from the wall of the ceramic vessel is reduced, extremely high vacuum can be generated and maintained in the interior of the vacuum vessel. Also, because the wall of the vacuum vessel has a high permeability with respect to a magnetic field and an electric field, the vacuum vessel can be used as a vessel in a particle accelerator that allows the high precision control of charged particles therein by means of an electromagnetic field.

    摘要翻译： 提供一种真空容器，其中包括环形壁部分（1）和板壁部分（2）的容器壁的大部分由诸如氮化硅的陶瓷材料形成。 为了将多个壁构件结合在一起，在其上制备具有不大于1μm的表面平坦度的接合面，然后将平均粒径不大于1μm的陶瓷粉末粘合物置于相邻的接合面 并进行加热。 因为从陶瓷容器的壁产生气体，例如氢气，所以可以在真空容器的内部产生极高的真空度并维持真空。 此外，由于真空容器的壁相对于磁场和电场具有高磁导率，所以真空容器可以用作粒子加速器中的容器，其允许通过以下方式对带电粒子进行高精度控制： 电磁场。

    Method of producing silicon nitride ceramic component
    9.
    发明授权
    Method of producing silicon nitride ceramic component 失效
    氮化硅陶瓷部件的制造方法

    公开(公告)号：US5599493A

    公开(公告)日：1997-02-04

    申请号：US429067

    申请日：1995-04-26

    申请人： Yasushi Ito ,  Takehisa Yamamoto ,  Takao Nishioka ,  Akira Yamakawa ,  Osamu Komura

    发明人： Yasushi Ito ,  Takehisa Yamamoto ,  Takao Nishioka ,  Akira Yamakawa ,  Osamu Komura

    IPC分类号： C04B41/80 ,  B24B1/00 ,  C04B35/584 ,  C04B35/593 ,  C04B35/599 ,  C04B35/63 ,  C04B41/00 ,  B29C71/02

    CPC分类号： C04B41/009 ,  C04B35/5935 ,  C04B41/00

    摘要： A method of producing a silicon nitride ceramic component, comprising: grinding a silicon nitride sintered body comprising .alpha.--Si.sub.3 N.sub.4 having an average grain size of 0.5 .mu.m or smaller and .beta.'-sialon having an average grain size of 3 .mu.m or smaller in major axis and 1 .mu.m or smaller in minor axis into a predetermined size with a surface roughness of 1-7 .mu.m in ten-point mean roughness; heat treating the same at temperature range of 800.degree.-1200.degree. C. in the air; and standing it to allow to be cooled, whereby providing a residual stress in the ground surface before and after the heat treating as a residual compressive stress at a ratio of 1 or higher of the residual compressive stress after the heat treating to that before the heat treating (residual compressive stress after the heat treating/residual compressive stress before the heat treating), preferably 5 or more.

    摘要翻译： 一种氮化硅陶瓷成分的制造方法，其特征在于，包括：研磨包含平均粒径为0.5μm以下的α-Si 3 N 4，平均粒径为3μm以下的β'赛隆的氮化硅烧结体 长轴和1μm或更小的短轴成预定尺寸，十点平均粗糙度的表面粗糙度为1-7μm; 在空气中在800〜1200℃的温度范围进行热处理; 并将其放置以允许冷却，由此在热处理之前和之后的地面中提供作为残余压应力的残余应力在热处理后的剩余压缩应力为1或更高的比例 处理（热处理后的残余压应力/热处理前的残余压应力）优选为5以上。

    Aluminum nitride sintered body and method of producing the same
    10.
    发明授权
    Aluminum nitride sintered body and method of producing the same 失效
    氮化铝烧结体及其制造方法

    公开(公告)号：US5529962A

    公开(公告)日：1996-06-25

    申请号：US406242

    申请日：1995-03-14

    申请人： Seiji Nakahata ,  Takahiro Matsuura ,  Kouichi Sogabe ,  Akira Yamakawa

    发明人： Seiji Nakahata ,  Takahiro Matsuura ,  Kouichi Sogabe ,  Akira Yamakawa

    IPC分类号： C04B35/581 ,  C04B35/58

    CPC分类号： C04B35/581

    摘要： An aluminum nitride sintered body comprising aluminum nitride crystals belonging to a Wurtzite hexagonal crystal system wherein the 3 axes a, b and c of the unit lattice of the crystal are defined such that the ratio b/a of the lengths of the axes b and a is 1,000 near the center of the crystal grain and lies within the range 0.997-1.003 in the vicinity of the grain boundary phase. Aluminum nitride sintered body is produced by sintering a molded body of a raw material powder having aluminum and nitrogen as its principal components at a temperature of 1700.degree.-1900.degree. C. in a non-oxidizing atmosphere having a partial pressure of carbon monoxide or carbon of not more than 200 ppm and then cooling the sintered body to 1500.degree. C. or a lower temperature at a rate of 5.degree. C./min or less. The aluminum nitride sintered body has a greatly improved thermal conductivity and, therefore, is suitable for heat slingers, substrates or the like for semiconductor devices.

    摘要翻译： 一种氮化铝烧结体，其包含属于纤锌矿六方晶系的氮化铝晶体，其中晶体的单位晶格的3轴a，b和c被定义为使得轴b和a的长度的比率b / a 在晶粒中心附近为1,000，位于晶界相附近的0.997-1.003范围内。 氮化铝烧结体通过在具有一氧化碳或碳分压的非氧化性气氛中，在1700〜1900℃的温度下烧结以铝和氮为主要成分的原料粉末的成型体 不超过200ppm，然后以5℃/分钟以下的速度将烧结体冷却至1500℃或更低温度。 氮化铝烧结体具有大大提高的导热性，因此适用于半导体器件的热引脚，基板等。