公开(公告)号：US06903009B2

公开(公告)日：2005-06-07

申请号：US10364070

申请日：2003-02-11

Applicant: Alexander Ruf ,  Manfred Schneegans

Inventor： Alexander Ruf ,  Manfred Schneegans

IPC: G11C5/06 ,  H01L21/283 ,  H01L21/4763 ,  H01L21/768 ,  H01L23/485 ,  H01L23/522 ,  H01L31/0336

CPC classification number: H01L21/76843 ,  H01L21/76849 ,  H01L21/76867 ,  H01L21/76877 ,  H01L23/485 ,  H01L23/5226 ,  H01L2924/0002 ,  H01L2924/00

Abstract: According to one embodiment, a method for fabricating a contact is provided. The method can include a step of depositing a Ti layer in order to completely fill a contact hole and on a surrounding surface of an insulation layer. The method can also include a step of partially converting the Ti layer into a TiN layer in such a manner that a TiN layer is provided on the top side in the contact hole. Further, the method can include a step of polishing back the Ti layer and any remaining TiN layer on the surrounding surface of the insulation layer in a single-stage polishing step.

Abstract translation: 根据一个实施例，提供了一种用于制造触点的方法。 该方法可以包括沉积Ti层以完全填充接触孔和绝缘层的周围表面的步骤。 该方法还可以包括将Ti层部分地转化为TiN层的步骤，即在接触孔的顶侧设置有TiN层。 此外，该方法可以包括在单级抛光步骤中抛光Ti层和在绝缘层的周围表面上的任何剩余的TiN层的步骤。

公开(公告)号：US06855630B1

公开(公告)日：2005-02-15

申请号：US10614430

申请日：2003-07-07

Applicant: Alexander Ruf ,  Norbert Urbansky ,  Wilhelm Claussen ,  Thomas Gärtner ,  Sven Schmidbauer

Inventor： Alexander Ruf ,  Norbert Urbansky ,  Wilhelm Claussen ,  Thomas Gärtner ,  Sven Schmidbauer

IPC: H01L21/285 ,  H01L21/768 ,  H01L21/44 ,  H01L21/336

CPC classification number: H01L21/76843 ,  H01L21/28518 ,  H01L21/76856

Abstract: A method makes contact with a doping region formed at a substrate surface of a substrate. An insulating layer is applied on the substrate surface and a contact hole is formed in the insulating layer. A metal-containing layer is subsequently deposited on the insulating layer and the surface region of the doping region that is uncovered by the contact hole. In a subsequent thermal process having two steps, first the metal-containing layer is reacted with the silicon of the doping region to form a metal silicide layer and then the rest of the metal-containing layer is converted into a metal-nitride-containing layer in a second thermal step.

Abstract translation: 一种方法与形成在衬底的衬底表面上的掺杂区域接触。 绝缘层被施加在基板表面上，并且在绝缘层中形成接触孔。 随后，在绝缘层和未被接触孔覆盖的掺杂区域的表面区域上沉积含金属层。 在具有两个步骤的随后的热处理中，首先使含金属层与掺杂区的硅反应形成金属硅化物层，然后将其余的含金属层转化为含金属氮化物的层 在第二热步骤中。

公开(公告)号：US06649441B2

公开(公告)日：2003-11-18

申请号：US10267224

申请日：2002-10-09

Applicant: Alexander Ruf

Inventor： Alexander Ruf

IPC: H01L2100

CPC classification number: G01R3/00 ,  G01R1/06727 ,  G01R1/06744 ,  H01L23/48 ,  H01L2224/48463

Abstract: The invention relates to a method for fabricating a microcontact spring on a substrate (1) with at least one contact pad (2) and a first insulator layer (13) with a window above the contact pad (2). In order to enable the cost-effective contact-connection or wiring of a plurality of silicon chips at the wafer level simultaneously, the method according to the invention comprises the steps of: a) producing a via opening (19) in a second insulator layer (16) above a location to be contact-connected; b) producing a depression (20) in the second insulator layer (16); c) filling the via opening (19) and the depression (20) in the second insulator layer (16) with a metal; d) leveling the surface produced by the preceding steps, so that excess metal and insulator material are removed; e) selectively etching back a first predetermined thickness of the second insulator layer (16), so that the second insulator layer (16) remains with a second predetermined thickness, so that a section of the via opening (19) is maintained and serves as mechanical retention for the resulting microcontact spring.

Abstract translation: 本发明涉及一种用于在具有至少一个接触焊盘（2）和在接触焊盘（2）上方具有窗口的第一绝缘体层（13）的衬底（1）上制造微接触弹簧的方法。为了使 成本有效的接触连接或晶片级的多个硅芯片的布线同时进行，根据本发明的方法包括以下步骤：a）在第二绝缘体层（16）的上方形成通孔（19） 要联系的位置; b）在第二绝缘体层（16）中产生凹陷（20）; c）用金属填充第二绝缘体层（16）中的通孔开口（19）和凹陷（20）; d）调整由前述步骤产生的表面，以便除去多余的金属和绝缘体材料; e）选择性地回蚀第二绝缘体层（16）的第一预定厚度，使得第二绝缘体层（16）保持第二预定厚度，使得通孔开口（19）的一部分保持并用作 所得微接触弹簧的机械保持力。

公开(公告)号：US06579786B2

公开(公告)日：2003-06-17

申请号：US09992977

申请日：2001-11-19

Applicant: Sven Schmidbauer ,  Alexander Ruf

Inventor： Sven Schmidbauer ,  Alexander Ruf

IPC: H01L2120

CPC classification number: H01L21/76843

Abstract: A method for depositing a two-layer diffusion barrier on a semiconductor wafer consisting of a TaN layer and a Ta layer serving as a carrier layer for copper interconnects. The TaN layer is inventively deposited at temperatures above 200° C. in a first step, and the Ta layer is deposited in a second step while cooling the semiconductor wafer to a temperature below 50° C.

公开(公告)号：US20110233232A1

公开(公告)日：2011-09-29

申请号：US13065658

申请日：2011-03-25

Applicant: Juergen Greiner-Perth ,  Alexander Ruf

Inventor： Juergen Greiner-Perth ,  Alexander Ruf

IPC: B65D33/36

CPC classification number: A61M15/0028 ,  A61J7/0053 ,  A61M5/2425 ,  A61M11/007 ,  A61M15/0036 ,  A61M15/08 ,  B05B11/0054 ,  B05B11/02

Abstract: A discharging device for pharmaceutical liquids having an actuator for carrying out a discharging operation of a pharmaceutical liquid. A first subordinate unit of the actuator has a discharge orifice, and a second subordinate unit is displaceable relative to the first subordinate unit for carrying out the discharging operation. The two subordinate units together delimit a buffer chamber from which a liquid passageway leads to the discharge orifice. A liquid-containing bag is accommodated in the buffer chamber and has film-like walls. The actuator and the bag are coordinated such that displacement of the subordinate units of the actuator relative to each other causes opening of the bag and reduction in the volume of the buffer chamber with consequent volume reduction of the liquid-containing bag and discharge of liquid through the discharge orifice.

Abstract translation: 一种用于制药液体的排出装置，具有用于进行药液的排出操作的致动器。 致动器的第一从属单元具有排出孔，并且第二从属单元相对于第一从属单元可移位，用于执行排放操作。 两个下属单元一起限定缓冲室，液体通道从该缓冲室通向排放孔。 含液袋容纳在缓冲室中并具有膜状壁。 致动器和袋被协调，使得致动器的下属单元相对于彼此的位移导致袋的打开和缓冲室的体积的减小，从而使含液袋的体积减小并且液体的排出通过 排气口。

公开(公告)号：US5966482A

公开(公告)日：1999-10-12

申请号：US890738

申请日：1997-07-11

Applicant: Wilfried Noell ,  Alexander Ruf ,  Karsten Mayr ,  Peter Guthner

Inventor： Wilfried Noell ,  Alexander Ruf ,  Karsten Mayr ,  Peter Guthner

IPC: G01B11/30 ,  G01N37/00 ,  G01Q60/18 ,  G01Q60/22 ,  G02B6/02 ,  G02B6/26

CPC classification number: G01Q60/22 ,  B82Y20/00 ,  B82Y35/00

Abstract: An optical near-field probe (1) includes a carrier component (10), which carries a tip (40), and has only one membrane (11, 20), transparent at least in the area of the tip (40), which is mounted on the light emission surface (9) of an optical waveguide (2) that is made of a rigid material such as glass or plastic. The dimensions of the membrane (11, 20), at least in one direction in the membrane plane, are less than or equal to the diameter of the optical waveguide (2). To position the tip (40) over the core (3) of the optical waveguide (2), optical methods can be used or the membrane and optical waveguide can be provided with locating elements.

Abstract translation: 光学近场探针（1）包括载体部件（10），其承载尖端（40），并且仅具有至少在尖端（40）的区域中透明的一个膜（11,20），其中 安装在由诸如玻璃或塑料的刚性材料制成的光波导（2）的发光表面（9）上。 至少在膜平面中的一个方向上的膜（11,20）的尺寸小于或等于光波导（2）的直径。 为了将尖端（40）定位在光波导（2）的芯（3）上，可以使用光学方法，或者可以为膜和光波导设置定位元件。

公开(公告)号：US06403473B1

公开(公告)日：2002-06-11

申请号：US09315329

申请日：1999-05-20

Applicant: Sven Schmidbauer ,  Alexander Ruf ,  Oliver Gehring

Inventor： Sven Schmidbauer ,  Alexander Ruf ,  Oliver Gehring

IPC: H01L2144

CPC classification number: C23C14/586 ,  C23C14/165 ,  C23C14/58 ,  H01L21/28518 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76856

Abstract: A process for producing metal-containing layers, in particular metal-containing diffusion barriers, contact layers and/or antireflection layers. The process according to the invention has a first step in which a metal layer having a predetermined thickness at an elevated temperature is applied to a semiconductor structure. Next, the metal layer is cooled in a nitrogen-containing atmosphere, resulting in a metal nitride layer being formed.

Abstract translation: 一种生产含金属层，特别是含金属的扩散阻挡层，接触层和/或抗反射层的方法。 根据本发明的方法具有第一步骤，其中在升高的温度下具有预定厚度的金属层被施加到半导体结构。 接着，将金属层在含氮气氛中冷却，形成金属氮化物层。

公开(公告)号：US06221757B1

公开(公告)日：2001-04-24

申请号：US09234341

申请日：1999-01-20

Applicant: Sven Schmidbauer ,  Alexander Ruf ,  Florian Schnabel ,  Mark Hoinkis ,  Stefan Weber

Inventor： Sven Schmidbauer ,  Alexander Ruf ,  Florian Schnabel ,  Mark Hoinkis ,  Stefan Weber

IPC: H01L214763

CPC classification number: H01L23/485 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A microelectronic structure is formed on a first layer or a substrate. The first layer or substrate is formed with grooves and contact openings. A metal nitride layer of TiN or WN covers the first layer or the substrate at least partially. An alpha-phase tantalum layer is deposited on top of the metal nitride layer. Finally, a metal is deposited to completely fill the grooves and the contact openings.

Abstract translation: 在第一层或衬底上形成微电子结构。 第一层或衬底形成有凹槽和接触开口。 TiN或WN的金属氮化物层至少部分地覆盖第一层或衬底。 将α相钽层沉积在金属氮化物层的顶部。 最后，沉积金属以完全填充凹槽和接触开口。

公开(公告)号：US20070257389A1

公开(公告)日：2007-11-08

申请号：US11741603

申请日：2007-04-27

Applicant: Alexander Ruf

Inventor： Alexander Ruf

IPC: B29C41/02 ,  B29C41/52

CPC classification number: B81C1/0046 ,  B81C2201/0153 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  G03F9/00 ,  G03F9/7042 ,  G03F9/7053

Abstract: An imprint mask for defining a structure on a substrate is provided with a probe which generates a signal as a function of the displacement of the probe by a force with a lateral component. The imprint mask is aligned relative to a substrate with an alignment mark based upon an interaction of the probe and the alignment mark.

Abstract translation: 用于在衬底上限定结构的压印掩模设置有探针，其通过具有侧向分量的力产生作为探针的位移的函数的信号。 基于探针和对准标记的相互作用，压印掩模相对于具有对准标记的基板对准。

公开(公告)号：US06649521B2

公开(公告)日：2003-11-18

申请号：US10208415

申请日：2002-07-29

Applicant: Alfred Kersch ,  Alexander Ruf

Inventor： Alfred Kersch ,  Alexander Ruf

IPC: H01L2144

CPC classification number: C23C14/542

Abstract: A method for determining relevant deposition parameters in i-PVD processes, includes, first calculating the reaction rates for desired reagents of the gas plasma and of a metal and/or metal compound to be deposited, then simulating the edge coverage of a predetermined structure with the deposited metal based upon the calculated reaction rates with systematic variation of the relevant deposition parameters, and compiling variant tables therefrom. By comparing an experimental verification of the simulated edge coverage by imaging the edge coverage of the metal layer deposited over the determined structure, e.g., using a TEM cross-section, with the simulated deposition parameters for the edge coverages that have been recorded in the variant table, it is possible to read the deposition parameters that are of relevance to the process from the variant table.

Abstract translation: 用于确定i-PVD工艺中相关沉积参数的方法包括首先计算待沉积的气体等离子体和金属和/或金属化合物的所需试剂的反应速率，然后模拟预定结构的边缘覆盖率， 基于所计算的反应速率和相关沉积参数的系统变化的沉积金属，以及从其编译变体表。 通过对所确定的结构上沉积的金属层的边缘覆盖进行成像（例如，使用TEM横截面）对已经记录在变体中的边缘覆盖物的模拟沉积参数进行成像来比较模拟边缘覆盖的实验验证 表中，可以从变体表中读取与过程相关的沉积参数。