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公开(公告)号：US5321290A
公开(公告)日：1994-06-14
申请号：US178556
申请日：1980-07-29
IPC分类号： H01L27/146 , H01L31/0352 , H01L31/09 , H01L25/00 , G01T1/22 , G02C26/10
CPC分类号： H01L31/09 , H01L27/14669 , H01L31/035281 , Y02E10/50
摘要： A thermal imaging device having both serial and parallel content is provided by a number of infra-red radiation detector strips supported side by side on an insulating substrate, each strip having a number of read-out regions. To allow connection from the side of the device to the innermost detector strips, conductors err end across outer strips. These conductors may extend over the strips and over insulating material therebetween. Alternatively the conductors may be in the form of conductive tracks embodied in a substrate of semiconductor material. The strips may be indented at the read-out regions to provide, with very close spacing, sufficient room for contact between the read-out regions and the conductive tracks. Preformed aluminium contact pads may be used between bridging links to the read-out regions and the conductive tracks the contact pads and preformed tracks being centered during preformation to ensure a good ohmic contact.
摘要翻译： 具有串行和并行内容的热成像装置由在绝缘基板上并排支撑的多个红外辐射检测器带提供，每个条带具有多个读出区域。 为了允许从设备的侧面到最内侧的检测器条的连接，导体绕着外部条纹结束。 这些导体可以在条带之间延伸并且在它们之间的绝缘材料上方延伸。 或者，导体可以是实现在半导体材料的衬底中的导电轨迹的形式。 条带可以在读出区域上缩进，以非常紧密的间距提供读出区域和导电轨迹之间的足够的接触空间。 预成形的铝接触焊盘可以在与读出区域和导电轨道的桥接部分之间用于接触焊盘和预成型轨道在预形成过程中居中以确保良好的欧姆接触。
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2.发明授权High frequency field effect transistor with carrier extraction to reduce intrinsic conduction 有权具有载波提取的高频场效应晶体管，以减少内在导通公开(公告)号：US06624451B2
公开(公告)日：2003-09-23
申请号：US09860770
申请日：2001-05-21
IPC分类号： H01L310328
CPC分类号： H01L29/66522 , H01L29/1033 , H01L29/105 , H01L29/1079 , H01L29/205
摘要： A field effect transistor (FET) is of the type which employs base biasing to depress the intrinsic contribution to conduction and reduce leakage current. It incorporates four successive layers (102 to 108): a p+ InSb base layer (102), a p+ InAlSb barrier layer (104), a &pgr; intrinsic layer (106) and an insulating SiO2 layer (108); p+ source and drain regions (110, 112) are implanted in the intrinsic layer (106). The FET is an enhancement mode MISFET (100) in which biasing establishes the FET channel in the intrinsic layer (106). The insulating layer (108) has a substantially flat surface supporting a gate contact (116). This avoids or reduces departures from channel straightness caused by intrusion of a gate groove, and enables a high value of current gain cut-off frequency to be obtained. In FETs with layers that are not flat, departures from channel straightness should not be more than 50 nm in extent, preferably less than 5 nm.
摘要翻译： 场效应晶体管（FET）是采用基极偏置来降低对传导的固有贡献并减少漏电流的类型。 它包括四个连续的层（102至108）：一个p + InSb基层（102），一个p + InAlSb阻挡层（104），一个本征层（106）和一个绝缘的SiO 2层（108）; p + +源区和漏区（110,112）被注入本征层（106）中。 FET是其中偏置在本征层（106）中建立FET沟道的增强型MISFET（100）。 绝缘层（108）具有支撑栅极触点（116）的基本平坦的表面。 这避免或减少了由于栅极沟槽侵入而导致的通道平直度的偏离，并且能够获得高的电流增益截止频率值。 在层不平坦的FET中，通道平直度的偏离不应该在50nm以上，优选小于5nm。
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公开(公告)号：US06359283B1
公开(公告)日：2002-03-19
申请号：US09451111
申请日：1999-11-30
IPC分类号： G01T124
CPC分类号： H01L27/14649 , H01L27/1462 , H01L27/14625
摘要： A noise reduced photon detector incorporates an array (10) of semiconductor diode detector elements (12). Each element (12) has an extrinsic active layer (20) sandwiched between two layers (18, 22) of wider bandgap and mutually opposite conductivity type. These layers are in turn sandwiched between two further layers (16, 24) of wider bandgap than the active layer (20) and of higher doping than the other layers (18, 22). A mirror (34) extends round much the array (10) and isolates each element (12) from photons emitted by other elements (12). In operation the elements (12) are reverse biased and exhibit negative luminescence which reduces their photon emission. These two effects reduce unwanted photon generation and absorption, and consequently photon noise is also reduced.
摘要翻译： 噪声降低的光子检测器包括半导体二极管检测器元件（12）的阵列（10）。 每个元件（12）具有夹在更宽带隙和相互相反导电类型的两层（18,22）之间的外在有源层（20）。 这些层又被夹在比有源层（20）更宽的带隙的两个另外的层（16,24）之间，并且比其它层（18,22）具有更高的掺杂。 反射镜（34）围绕阵列（10）延伸并且将每个元件（12）与由其它元件（12）发射的光子隔离。 在操作中，元件（12）被反向偏置并且表现出负的发光，这降低了它们的光子发射。 这两种效应减少了不必要的光子产生和吸收，因此光子噪声也降低了。
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公开(公告)号：US5382814A
公开(公告)日：1995-01-17
申请号：US084280
申请日：1993-08-12
IPC分类号： H01L29/73 , H01L21/331 , H01L21/336 , H01L29/10 , H01L29/205 , H01L29/737 , H01L29/78 , H01L29/861 , H01L27/14
CPC分类号： H01L29/66522 , H01L29/1033 , H01L29/1037 , H01L29/1079 , H01L29/1087 , H01L29/205 , H01L29/7371 , H01L29/861
摘要： A semiconductor device in the form of a metal insulator field effect transistor (MISFET) (200) is constructed as a heterostructure of narrow bandgap In.sub.1-x Al.sub.x Sb semiconductor materials. The MISFET (200) is formed from four semiconducting layers (112 to 118) arranged in series as follows: a heavily doped p-type first layer (112), a heavily doped relatively wider bandgap p-type second layer (114), a lightly doped p-type third layer (116) and a heavily doped n-type fourth layer (118). A source (202) and a drain (204) are formed in the fourth layer (118) and a gate (116/205) in the third layer. An n.sup.+ p.sup.- junction (124) is formed between the third and fourth layers and a p.sup.+ p.sup.- junction (122) between the second and third layers. The second layer (114) provides a conduction band potential energy barrier to minority carrier (electron) flow to the gate (116/205), and is sufficiently wide to prevent tunnelling of minority carriers therebetween. The first and second layers (112, 114) in combination provide a p.sup.+ p.sup.+ excluding contact to the third layer (116). The n.sup.+ p.sup.- junction (124) between the third and fourth layers (116, 118) is an extracting contact; when reverse biased in operation, this junction (124) extracts minority carriers from the region of the third layer (116) adjacent the collector (118/204). In operation, the third layer (116) incorporating the gate (205) becomes depleted of charge carriers and therefore exhibits greatly reduced leakage current. In consequence, the MISFET (200) has good dynamic range in terms of controllable drain current. The invention also provides bipolar transistors (300, 400 ) and related devices.
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5.发明授权Photoconductive detector arranged for bias field concentration at the output bias contact 失效光电导检测器设置在输出偏置触点处的偏置场浓度
公开(公告)号：US4926228A
公开(公告)日：1990-05-15
申请号：US811304
申请日：1985-12-16
IPC分类号： H01L27/146 , H01L31/0224 , H01L31/09
CPC分类号： H01L27/14669 , H01L31/0224 , H01L31/09
摘要： A detector, of photosensitive semiconductor material with input and output bias contacts. To improve both frequency response and spatial resolution, minority carriers having tendency to accumulate in the vicinity of the output bias contact are instead rapidly swept out, being driven towards this contact by a concentrated electric field. To produce a local field concentration, the output bias contact may be extended towards the input bias contact, or the detector material near this contact may be configured by slotting or tapering.
摘要翻译： 具有输入和输出偏置触点的感光半导体材料的检测器。 为了改善频率响应和空间分辨率，具有积累在输出偏置接触附近的倾向的少数载流子被快速地扫过，被集中的电场驱向该接触。 为了产生局部场浓度，输出偏置触点可以朝向输入偏置触点延伸，或者该触点附近的检测器材料可以通过开槽或渐缩来配置。
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公开(公告)号：US4883962A
公开(公告)日：1989-11-28
申请号：US276202
申请日：1981-06-23
申请人： Charles T. Elliott
发明人： Charles T. Elliott
IPC分类号： H01L27/146 , H01L31/0352 , H01L31/09
CPC分类号： H01L31/09 , H01L27/14669 , H01L31/035281 , Y02E10/50
摘要： A thermal imaging system including a biassed elongate detector element of photoconductive material, over which an image of a thermal scene is scanned at a velocity that is matched to the drift velocity of photocarriers generated in the element. In order to improve responsivity and detectivity the length of the detector element or the magnitudes of bias and scan velocity are selected so that the time taken to scan the detector element from one end to a read-out region of the detector element is greater than the lifetime of the photocarriers generated in the element. In order to avoid loss of resolution by photocarrier diffusion the photocarrier lifetime of the detector material is of relatively low value. The system may include one detector element only, or it may include several detector elements arranged in parallel. Furthermore, one or more additional read-out regions, each formed by a pair of conductors, may be included in the detector element between the bias contact at one end of the element and the read-out region already mentioned.
摘要翻译： 一种热成像系统，其包括光导材料的偏置的细长检测器元件，在该场景上以与元件中产生的光载流子的漂移速度相匹配的速度扫描热场景的图像。 为了提高响应性和检测性，选择检测器元件的长度或偏置和扫描速度的大小，使得从检测器元件的一端扫描到读出区域所需的时间大于 在元件中产生的光载流子的寿命。 为了避免光载流子扩散的分辨率损失，检测器材料的光载流子寿命具有相对较低的值。 该系统可以仅包括一个检测器元件，或者其可以包括并行布置的几个检测器元件。 此外，每个由一对导体形成的一个或多个附加读出区域可以被包括在元件的一端的偏置触点和已经提到的读出区域之间的检测器元件中。
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公开(公告)号：US06420707B1
公开(公告)日：2002-07-16
申请号：US09297176
申请日：1999-07-21
申请人： Carl J. Anthony , Kevin M. Brunson , Charles T. Elliott , Neil T. Gordon , Timothy J. Phillips , Michael J. Uren
发明人： Carl J. Anthony , Kevin M. Brunson , Charles T. Elliott , Neil T. Gordon , Timothy J. Phillips , Michael J. Uren
IPC分类号： H01L31113
CPC分类号： H01L31/1136
摘要： An infra-red detector (10) comprises a detector region (38) and a collector region separated by a barrier region. Operation of these regions is controlled by potentials applied to respective gate electrodes (30, 34, 32), insulated from the detector, barrier and collector regions by an insulating oxide layer (36). The detector, barrier, and collector regions may be arranged on a silicon substrate (24). In operation, photo-excited electrons are generated in the detector region and these cross the barrier region for readout from the collector region.
摘要翻译： 红外检测器（10）包括检测器区域（38）和由屏障区域分隔的收集区域。 这些区域的操作由施加到通过绝缘氧化物层（36）与检测器，阻挡层和集电极区绝缘的各个栅极（30,34,32）的电位控制。 检测器，阻挡层和集电极区域可以布置在硅衬底（24）上。 在操作中，在检测器区域中产生光激发电子，并且这些电子跨越势垒区域以从集电极区域读出。
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公开(公告)号：US06175113B1
公开(公告)日：2001-01-16
申请号：US09043496
申请日：1998-03-27
IPC分类号： G01J530
CPC分类号： H04N5/33 , G01J5/522 , H04N5/3651
摘要： A thermal imaging system (10) which is accoupled and by scanning recreates a thermal image by superimposing measured variations in infrared emission from a scene (22) onto a reference level supplied by a light emitting diode (28). The diode (28) is both a positive and negative luminescent emitter. Emitted flux is current controlled to be equivalent to black body radiation at a range of temperatures which may be colder or hotter than ambient. A signal generated with the system (10) switches between scene and diode observation is a measure of the difference between the mean scene temperature and the diode effective temperature. In response to this digital, control means adjust the bias current through the diode (28) in order to reduce the temperature difference. The reference temperature converges towards the mean scene temperature as this process is repeated. Absolute temperature is thus restored and some image defects removed.
摘要翻译： 通过将来自场景（22）的红外发射中的测量变化叠加到由发光二极管（28）提供的参考电平上而被耦合并通过扫描重新产生热图像的热成像系统（10）。 二极管（28）既是正的和负的发光发射器。 电流通量控制在相当于在比环境温度更冷或更热的温度范围内的黑体辐射。 通过系统（10）产生的信号在场景和二极管观测之间切换是平均场景温度和二极管有效温度之间差异的度量。 响应于该数字，控制装置调节通过二极管（28）的偏置电流，以便降低温度差。 当该过程重复时，参考温度趋向于平均场景温度。 因此恢复绝对温度并消除一些图像缺陷。
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公开(公告)号：US4572953A
公开(公告)日：1986-02-25
申请号：US485888
申请日：1983-04-18
摘要： An infra red photo detector system comprises a piece of detector material, such as Cd.sub.x Hg.sub.1-x Te, InSb, InAs, etc, carrying at least a pair of spaced electrodes. An optical arrangement directs a small spot of radiation onto the detector. The position of the small spot on the much larger detector is found by applying an electrical bias between the electrodes causing a drift of photo carriers. The bias may be of alternating polarity and the detector output measured at each polarity. Alternatively a high frequency bias may be applied and the A.C. offset from the detector used to indicate spot position. Alternatively the spot position may be modulated or swept along the detector by a mirror moving in a sawtooth scanning action.
摘要翻译： 红外光电检测器系统包括一块检测器材料，例如CdxHg1-xTe，InSb，InAs等，其携带至少一对隔开的电极。 光学装置将小的辐射点引导到检测器上。 通过在电极之间施加电偏压导致光载体的漂移，可以发现较大检测器上的小斑点的位置。 该偏压可以是交替极性，并且在每个极性处测量检测器输出。 或者，可以施加高频偏置，并且来自检测器的交流偏移用于指示光斑位置。 或者，斑点位置可以通过以锯齿扫描动作移动的反射镜沿检测器被调制或扫掠。
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公开(公告)号：US5248884A
公开(公告)日：1993-09-28
申请号：US700925
申请日：1984-09-20
IPC分类号： H01L31/0296 , H01L31/09 , H01Q3/26
CPC分类号： H01Q3/2676 , H01L31/02966 , H01L31/09 , G01J5/0837
摘要： An infrared detector comprises a thin film of photo-responsive material on transparent dielectric material with an array of planar antennae adjacent to the film surface. The antennae are separate from ohmic contacts arranged to connect the film to an external circuit. The antennae concentrate radiation in fringe fields at antenna edges and extremities interacting with the photo-responsive material. The detectors may be photovoltaic or photoconductive. The antennae may be rectangular, bow-tie, cruciform, elliptic, circular or square, and are dimensioned for resonance (preferably half-wavelength resonance) at frequencies within the photo-responsive material absorption band. Half-wavelength resonant antennae are best matched by F/0.7 optics. The detector may be a reticulated array. The dielectric material may be formed as a lens.
摘要翻译： 红外检测器包括在透明电介质材料上的光响应材料薄膜，具有与膜表面相邻的平面天线阵列。 天线与被布置为将膜连接到外部电路的欧姆接触体分开。 天线将天线边缘和末端的边缘区域中的辐射集中在与光响应材料相互作用的位置。 检测器可以是光电或光电导。 天线可以是矩形，弓形，十字形，椭圆形，圆形或正方形，并且在光响应材料吸收带内的频率处的尺寸用于共振（优选为半波长共振）。 半波长谐振天线与F / 0.7光学器件最匹配。 检测器可以是网状阵列。 电介质材料可以形成为透镜。
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