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公开(公告)号：US5382814A
公开(公告)日：1995-01-17
申请号：US084280
申请日：1993-08-12
IPC分类号： H01L29/73 , H01L21/331 , H01L21/336 , H01L29/10 , H01L29/205 , H01L29/737 , H01L29/78 , H01L29/861 , H01L27/14
CPC分类号： H01L29/66522 , H01L29/1033 , H01L29/1037 , H01L29/1079 , H01L29/1087 , H01L29/205 , H01L29/7371 , H01L29/861
摘要： A semiconductor device in the form of a metal insulator field effect transistor (MISFET) (200) is constructed as a heterostructure of narrow bandgap In.sub.1-x Al.sub.x Sb semiconductor materials. The MISFET (200) is formed from four semiconducting layers (112 to 118) arranged in series as follows: a heavily doped p-type first layer (112), a heavily doped relatively wider bandgap p-type second layer (114), a lightly doped p-type third layer (116) and a heavily doped n-type fourth layer (118). A source (202) and a drain (204) are formed in the fourth layer (118) and a gate (116/205) in the third layer. An n.sup.+ p.sup.- junction (124) is formed between the third and fourth layers and a p.sup.+ p.sup.- junction (122) between the second and third layers. The second layer (114) provides a conduction band potential energy barrier to minority carrier (electron) flow to the gate (116/205), and is sufficiently wide to prevent tunnelling of minority carriers therebetween. The first and second layers (112, 114) in combination provide a p.sup.+ p.sup.+ excluding contact to the third layer (116). The n.sup.+ p.sup.- junction (124) between the third and fourth layers (116, 118) is an extracting contact; when reverse biased in operation, this junction (124) extracts minority carriers from the region of the third layer (116) adjacent the collector (118/204). In operation, the third layer (116) incorporating the gate (205) becomes depleted of charge carriers and therefore exhibits greatly reduced leakage current. In consequence, the MISFET (200) has good dynamic range in terms of controllable drain current. The invention also provides bipolar transistors (300, 400 ) and related devices.
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公开(公告)号：US06175113B1
公开(公告)日：2001-01-16
申请号：US09043496
申请日：1998-03-27
IPC分类号： G01J530
CPC分类号： H04N5/33 , G01J5/522 , H04N5/3651
摘要： A thermal imaging system (10) which is accoupled and by scanning recreates a thermal image by superimposing measured variations in infrared emission from a scene (22) onto a reference level supplied by a light emitting diode (28). The diode (28) is both a positive and negative luminescent emitter. Emitted flux is current controlled to be equivalent to black body radiation at a range of temperatures which may be colder or hotter than ambient. A signal generated with the system (10) switches between scene and diode observation is a measure of the difference between the mean scene temperature and the diode effective temperature. In response to this digital, control means adjust the bias current through the diode (28) in order to reduce the temperature difference. The reference temperature converges towards the mean scene temperature as this process is repeated. Absolute temperature is thus restored and some image defects removed.
摘要翻译： 通过将来自场景（22）的红外发射中的测量变化叠加到由发光二极管（28）提供的参考电平上而被耦合并通过扫描重新产生热图像的热成像系统（10）。 二极管（28）既是正的和负的发光发射器。 电流通量控制在相当于在比环境温度更冷或更热的温度范围内的黑体辐射。 通过系统（10）产生的信号在场景和二极管观测之间切换是平均场景温度和二极管有效温度之间差异的度量。 响应于该数字，控制装置调节通过二极管（28）的偏置电流，以便降低温度差。 当该过程重复时，参考温度趋向于平均场景温度。 因此恢复绝对温度并消除一些图像缺陷。
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3.发明授权High frequency field effect transistor with carrier extraction to reduce intrinsic conduction 有权具有载波提取的高频场效应晶体管，以减少内在导通公开(公告)号：US06624451B2
公开(公告)日：2003-09-23
申请号：US09860770
申请日：2001-05-21
IPC分类号： H01L310328
CPC分类号： H01L29/66522 , H01L29/1033 , H01L29/105 , H01L29/1079 , H01L29/205
摘要： A field effect transistor (FET) is of the type which employs base biasing to depress the intrinsic contribution to conduction and reduce leakage current. It incorporates four successive layers (102 to 108): a p+ InSb base layer (102), a p+ InAlSb barrier layer (104), a &pgr; intrinsic layer (106) and an insulating SiO2 layer (108); p+ source and drain regions (110, 112) are implanted in the intrinsic layer (106). The FET is an enhancement mode MISFET (100) in which biasing establishes the FET channel in the intrinsic layer (106). The insulating layer (108) has a substantially flat surface supporting a gate contact (116). This avoids or reduces departures from channel straightness caused by intrusion of a gate groove, and enables a high value of current gain cut-off frequency to be obtained. In FETs with layers that are not flat, departures from channel straightness should not be more than 50 nm in extent, preferably less than 5 nm.
摘要翻译： 场效应晶体管（FET）是采用基极偏置来降低对传导的固有贡献并减少漏电流的类型。 它包括四个连续的层（102至108）：一个p + InSb基层（102），一个p + InAlSb阻挡层（104），一个本征层（106）和一个绝缘的SiO 2层（108）; p + +源区和漏区（110,112）被注入本征层（106）中。 FET是其中偏置在本征层（106）中建立FET沟道的增强型MISFET（100）。 绝缘层（108）具有支撑栅极触点（116）的基本平坦的表面。 这避免或减少了由于栅极沟槽侵入而导致的通道平直度的偏离，并且能够获得高的电流增益截止频率值。 在层不平坦的FET中，通道平直度的偏离不应该在50nm以上，优选小于5nm。
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公开(公告)号：US5949081A
公开(公告)日：1999-09-07
申请号：US43792
申请日：1998-03-27
申请人： Timothy Ashley , Charles T Elliott , Neil T Gordon
发明人： Timothy Ashley , Charles T Elliott , Neil T Gordon
CPC分类号： H01L33/28
摘要： A dynamic infrared scene projector for use infrared detections systems which has particular, although not exclusive, use in thermal imaging or seeker systems. In such systems, a dynamic infrared scene projector is used to simulate the thermal scene for testing and calibration purposes. The device comprises an array of electroluminescent semiconductor diode structures, capable of emitting both positiveand negative luminescence, and electronic circuitry for supplying currents of both polarity to each diode independently so that the emission of positive and negative luminescence can be controlled. The diode structures in the array are based on narrow bandgap semiconductor materials, for example, the Hg.sub.1-x Cd.sub.x Te, In.sub.1-x Al.sub.x Sb, Hg.sub.1-x Zn.sub.x Te or In.sub.1-x Tl.sub.x Sb materials systems (where x is the composition). In a preferred embodiment, the diodes are capable of emitting infrared radiation in the wavelength regions between 3-5 .mu.m or 8-13 .mu.m. By utilizing the negative luminescence properties of the diode structures, the dynamic infrared scene projector can simulate a wide range of temperatures, and in particular low temperatures, without external cryogenic cooling. The dynamic infrared scene projector also permits the use of fasterthermal imager frame rates than are achievable with existing systems.
摘要翻译： PCT No.PCT / GB96 / 02374 Sec。 371日期：1998年3月27日 102（e）1998年3月27日PCT PCT 1996年9月26日PCT公布。 出版物WO97 / 13282 日期1997年4月10日一种用于红外线检测系统的动态红外场景投影仪，其具有特别但非排他性，用于热成像或探测器系统。 在这样的系统中，使用动态红外场景投影仪来模拟用于测试和校准目的的热场景。 该器件包括能够发射正和负发光的电致发光半导体二极管结构的阵列和用于独立地向每个二极管提供两极性的电流的电子电路，从而可以控制正和负发光的发射。 阵列中的二极管结构基于窄带隙半导体材料，例如Hg1-xCdxTe，In1-xAlxSb，Hg1-xZnxTe或In1-xTlxSb材料系统（其中x是组成）。 在优选实施例中，二极管能够在3-5μm或8-13μm之间的波长区域中发射红外辐射。 通过利用二极管结构的负发光特性，动态红外场景投影仪可以模拟宽范围的温度，特别是低温，无需外部低温冷却。 动态红外场景投影机还允许使用比现有系统可实现的更快的热像仪帧速率。
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公开(公告)号：US5016073A
公开(公告)日：1991-05-14
申请号：US600126
申请日：1990-10-22
申请人： Charles T. Elliott , Timothy Ashley
发明人： Charles T. Elliott , Timothy Ashley
IPC分类号： G01J1/02 , H01L31/10 , H01L31/101 , H01L31/103 , H01L31/109
CPC分类号： H01L31/1032 , H01L31/101 , H01L31/109
摘要： A photodetector of semiconductor material includes a photosensitive region adjacent to a minority carrier extraction region arranged when biased to depress the photosensitive region minority carrier concentraction, and means for inhibiting injection of minority carriers to the photosensitive region. Depression of the minority carrier concentration produces low noise and high responsivity properties as obtained by cooling, but without the need for cooling equipment. The minority carrier extraction region may be a pn homo- or heterojunction. Minority carrier injection may be inhibited by a homo- or hetero-structure excluding contact to the photosensitive region, or alternatively by providing the photosensitive region with at least one subsidiary pn junction biasable to inhibit minority carrier flow. The photosensitive region may have an array of extraction regions spaed by less than a minority carrier diffusion length. The extraction regions may have separate outputs to provide respective pixels in a display.
摘要翻译： 半导体材料的光电检测器包括与被偏压以抑制感光区域少数载流子浓度时排列的少数载流子提取区域相邻的感光区域，以及用于抑制向感光区域注入少数载流子的装置。 少数载流子浓度的抑制通过冷却产生低噪声和高响应性，但不需要冷却设备。 少数载流子提取区可以是pn同 - 或异质结。 少数载流子注入可以通过不包括与感光区域的接触的均匀或异质结构来抑制，或者通过为光敏区域提供至少一个可以抑制少数载流子流动的辅助pn结。 感光区域可以具有由小于少数载流子扩散长度而调节的提取区域阵列。 提取区域可以具有单独的输出以在显示器中提供相应的像素。
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公开(公告)号：US6127679A
公开(公告)日：2000-10-03
申请号：US983349
申请日：1998-01-09
申请人： Timothy Ashley , Charles T Elliott , Neil T Gordon , Ralph S Hall
发明人： Timothy Ashley , Charles T Elliott , Neil T Gordon , Ralph S Hall
CPC分类号： H04N5/3651 , F41G7/001 , F41G7/2253 , F41G7/2293 , H04N5/33
摘要： A thermal sensing system (10) including an array of photon detectors (14) produces a detector-dependent response to irradiation. Variations in individual detector characteristics produce a fixed pattern noise which degrades an image or other response. A switchable mirror (M1) may at one position (P.sub.cal) direct infrared radiation from a light emitting diode (20) onto the detector array (14). The diode (20) is both a negative and positive luminescent emitter, the flux emitted is current controlled to be equivalent to black body radiation at a range of temperatures both colder and hotter than ambient. Calibration relationships comprising transfer functions relating incident intensity to signal response are derived for each detector. Alternatively the mirror (M1) may be at an observation position (P.sub.obs) and infrared radiation from a remote scene reaches the detector array (14). Resulting detector signals are converted into corrected fluxes using individual calibration relationships previously derived and an image or response with reduced fixed pattern noise is obtained.
摘要翻译： PCT No.PCT / GB96 / 01805 Sec。 371日期1998年1月9日 102（e）1998年1月9日PCT PCT 1996年7月29日PCT公布。 出版物WO97 / 05742 日期1997年2月13日包括光子检测器（14）阵列的热感测系统（10）产生对照射的检测器相关响应。 单个检测器特性的变化产生固定模式噪声，降低图像或其他响应。 可切换镜（M1）可以在从发光二极管（20）到检测器阵列（14）的一个位置（Pcal）的直接红外辐射。 二极管（20）都是负极和正极的发光发射器，所发射的电流被电流控制在相当于在比环境温度更冷和更热的温度范围内的黑体辐射。 对于每个检测器导出包括将入射强度与信号响应相关联的传递函数的校准关系。 或者，反射镜（M1）可以在观察位置（Pobs）处，并且来自远程场景的红外辐射到达检测器阵列（14）。 所得到的检测器信号使用先前导出的各个校准关系转换成校正通量，并且获得具有降低的固定模式噪声的图像或响应。
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7.发明授权Photoconductive detector arranged for bias field concentration at the output bias contact 失效光电导检测器设置在输出偏置触点处的偏置场浓度
公开(公告)号：US4926228A
公开(公告)日：1990-05-15
申请号：US811304
申请日：1985-12-16
IPC分类号： H01L27/146 , H01L31/0224 , H01L31/09
CPC分类号： H01L27/14669 , H01L31/0224 , H01L31/09
摘要： A detector, of photosensitive semiconductor material with input and output bias contacts. To improve both frequency response and spatial resolution, minority carriers having tendency to accumulate in the vicinity of the output bias contact are instead rapidly swept out, being driven towards this contact by a concentrated electric field. To produce a local field concentration, the output bias contact may be extended towards the input bias contact, or the detector material near this contact may be configured by slotting or tapering.
摘要翻译： 具有输入和输出偏置触点的感光半导体材料的检测器。 为了改善频率响应和空间分辨率，具有积累在输出偏置接触附近的倾向的少数载流子被快速地扫过，被集中的电场驱向该接触。 为了产生局部场浓度，输出偏置触点可以朝向输入偏置触点延伸，或者该触点附近的检测器材料可以通过开槽或渐缩来配置。
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8.发明授权Magnetic field sensor including carrier excluding for reducing an instrinsic contribution to carrier concentration in the active region 失效磁场传感器包括载流子排除或提取，用于减少活性区域中载流子浓度的固有贡献公开(公告)号：US06809514B2
公开(公告)日：2004-10-26
申请号：US10258852
申请日：2002-10-29
IPC分类号： G01R3306
CPC分类号： G01R33/07 , Y10T428/1107 , Y10T428/1186
摘要： The invention provides a Hall effect magnetic field sensor (10, 50) including carrier excluding or extracting means (36, 66) for reducing an intrinsic contribution to carrier concentration in the active region (14e, 53c) to provide for the sensor to be operative in an extrinsic saturated regime. This provides an advantage that magnetic field measurement sensitivity of the sensor (10, 50) can be made substantially insensitive to sensor temperature thereby improving measurement accuracy.
摘要翻译： 本发明提供了一种霍尔效应磁场传感器（10,50），其包括载体排除或提取装置（36,66），用于降低对有源区域（14e，53c）中的载流子浓度的固有贡献，以提供传感器的操作 在一个外在饱和的制度。 这提供了传感器（10,50）的磁场测量灵敏度对传感器温度基本上不敏感的优点，从而提高测量精度。
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公开(公告)号：US6133590A
公开(公告)日：2000-10-17
申请号：US68943
申请日：1998-05-21
申请人： Timothy Ashley , Graham J Pryce
发明人： Timothy Ashley , Graham J Pryce
IPC分类号： H01L29/43 , H01L21/28 , H01L29/20 , H01L29/205 , H01L31/0216 , H01L33/40 , H01S5/00 , H01S5/183 , H01S5/20 , H01S5/223 , H01S5/32 , H01L33/00 , H01L31/0296 , H01L31/0304 , H01L31/101 , H01L29/89
CPC分类号： H01L33/40 , H01L29/205 , H01L31/02161 , H01S5/183 , H01S5/2004 , H01S5/2009 , H01S5/223 , H01S5/3095
摘要： A semiconductor device wherein the layer of highly doped p-type material typically found in devices of the prior art is replaced with a layer of doped n-type material, having a doping concentration of between 1.times.10.sup.18 cm.sup.-3 and less than 1.times.10.sup.19 cm.sup.-3, and a thin layer of doped p type material thus facilitating low resistance contact, transparency to radiation produced by the device and confinement with low loss of radiation produced by laser devices.
摘要翻译： PCT No.PCT / GB96 / 02914 Sec。 371日期1998年5月21日 102（e）日期1998年5月21日PCT提交1996年11月27日PCT公布。 出版物WO97 / 20353 日期1996年6月5日一种半导体器件，其中通常在现有技术的器件中发现的高掺杂p型材料的层被掺杂的n型材料层替代，掺杂的n型材料的掺杂浓度在1×10 18 cm -3以下 比1×1019cm-3薄，并且掺杂p型材料的薄层因此有利于低电阻接触，对由器件产生的辐射的透明度以及由激光器件产生的低辐射损失。
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公开(公告)号：US20120175677A1
公开(公告)日：2012-07-12
申请号：US13496362
申请日：2010-09-21
IPC分类号： H01L31/109 , H01L31/0352
CPC分类号： H01L31/1828 , H01L31/073 , Y02E10/543
摘要： A photocell which operates at multiple wavelengths for efficient power generation from broadband incident radiation. According to a preferred embodiment, the photocell is a multi-layer device that includes a first outer layer, a middle layer and an inner layer disposed on a substrate. All three layers are formed from II-VI semiconductor layers. The device is arranged such that the outer layer has a high band gap, the middle layer has a band gap which is less than half the band gap of the outer layer and the inner layer has a band gap which is less than half that of the substrate. Thus, there is a step change in band gap between various layers.
摘要翻译： 一种在多个波长下工作的光电管，用于从宽带入射辐射有效发电。 根据优选实施例，光电池是包括设置在基板上的第一外层，中间层和内层的多层器件。 所有三层由II-VI半导体层形成。 该装置被布置成使得外层具有高带隙，中间层具有小于外层的带隙的一半的带隙，并且内层具有小于外层的一半的带隙 基质。 因此，各层之间的带隙具有阶跃变化。
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