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    FILM FORMATION VIA PULSED RF PLASMA
    1.
    发明申请
    FILM FORMATION VIA PULSED RF PLASMA 审中-公开

    公开(公告)号：US20200258720A1

    公开(公告)日：2020-08-13

    申请号：US16785331

    申请日：2020-02-07

    Applicant: Applied Materials, Inc.

    Inventor： Krishna NITTALA ,  Diwakar N. KEDLAYA ,  Karthik JANAKIRAMAN ,  Yi YANG ,  Rui CHENG

    IPC: H01J37/32 ,  H01L21/02 ,  C23C16/505 ,  C23C16/515

    Abstract: Systems and methods of using pulsed RF plasma to form amorphous and microcrystalline films are discussed herein. Methods of forming films can include (a) forming a plasma in a process chamber from a film precursor and (b) pulsing an RF power source to cause a duty cycle on time (TON) of a duty cycle of a pulse generated by the RF power source to be less than about 20% of a total cycle time (TTOT) of the duty cycle to form the film. The methods can further include (c) depositing a first film interlayer on a substrate in the process chamber; (d) subsequent to (c), purging the process chamber; and (e) subsequent to (d), introducing a hydrogen plasma to the process chamber. Further in the method, (b)-(e) are repeated to form a film. The film can have an in-film hydrogen content of less than about 10%.

    HARDMASKS AND PROCESSES FOR FORMING HARDMASKS BY PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION
    7.
    发明申请
    HARDMASKS AND PROCESSES FOR FORMING HARDMASKS BY PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION 有权

    公开(公告)号：US20220119953A1

    公开(公告)日：2022-04-21

    申请号：US17075812

    申请日：2020-10-21

    Applicant: Applied Materials, Inc.

    Inventor： Jui-Yuan HSU ,  Krishna NITTALA ,  Pramit MANNA ,  Karthik JANAKIRAMAN

    IPC: C23C16/50 ,  H01J37/32 ,  C23C16/26 ,  C23C16/458 ,  C23C16/56

    Abstract: Embodiments of the present disclosure generally relate to hardmasks and to processes for forming hardmasks by plasma-enhanced chemical vapor deposition (PECVD). In an embodiment, a process for forming a hardmask layer on a substrate is provided. The process includes introducing a substrate to a processing volume of a PECVD chamber, the substrate on a substrate support, the substrate support comprising an electrostatic chuck, and flowing a process gas into the processing volume within the PECVD chamber, the process gas comprising a carbon-containing gas. The process further includes forming, under plasma conditions, an energized process gas from the process gas in the processing volume, electrostatically chucking the substrate to the substrate support, depositing a first carbon-containing layer on the substrate while electrostatically chucking the substrate, and forming the hardmask layer by depositing a second carbon-containing layer on the substrate.

    POLYSILICON LINERS
    8.
    发明申请
    POLYSILICON LINERS 审中-公开

    公开(公告)号：US20200266052A1

    公开(公告)日：2020-08-20

    申请号：US16795191

    申请日：2020-02-19

    Applicant: Applied Materials, Inc.

    Inventor： Krishna NITTALA ,  Rui CHENG ,  Karthik JANAKIRAMAN ,  Praket Prakash JHA ,  Jinrui GUO ,  Jingmei LIANG

    IPC: H01L21/02

    Abstract: Aspects of the disclosure provide a method including depositing an underlayer comprising silicon oxide over a substrate, depositing a polysilicon liner on the underlayer, and depositing an amorphous silicon layer on the polysilicon liner. Aspects of the disclosure provide a device intermediate including a substrate, an underlayer comprising silicon oxide formed over the substrate, a polysilicon liner disposed on the underlayer, and an amorphous silicon layer disposed on the polysilicon liner.

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