公开(公告)号：US20240254624A1

公开(公告)日：2024-08-01

申请号：US18122506

申请日：2023-03-16

Applicant: Applied Materials, Inc.

Inventor： Ala MORADIAN ,  Manjunath SUBBANNA

IPC: C23C16/455 ,  C23C16/458 ,  C23C16/46

CPC classification number: C23C16/45502 ,  C23C16/4583 ,  C23C16/46

Abstract: Embodiments of the present disclosure relate to plate assemblies, process kits, processing chambers, and related components and methods for semiconductor manufacturing. In one implementation, a plate assembly for disposition in a processing chamber includes an inner section that includes an opaque material. The inner section has an outer diameter. The plate assembly includes a first outer section that is arcuate in shape and includes the opaque material. The first outer section includes a first inner shoulder, and a first inner lip extending inwardly relative to the first inner shoulder.

公开(公告)号：US20240141498A1

公开(公告)日：2024-05-02

申请号：US18085402

申请日：2022-12-20

Applicant: Applied Materials, Inc.

Inventor： Zuoming ZHU ,  Ala MORADIAN ,  Shu-Kwan LAU ,  Manjunath SUBBANNA ,  Errol Antonio C. SANCHEZ ,  Abhishek DUBE ,  Erika R. WARRICK ,  Martin Jeffrey SALINAS ,  Chandra MOHAPATRA

IPC: C23C16/52 ,  C23C16/448 ,  C23C16/455

CPC classification number: C23C16/52 ,  C23C16/4481 ,  C23C16/45561

Abstract: The present disclosure relates to methods of correlating zones of processing chambers, and related systems and methods. In one implementation, a method of correlating zones of a processing chamber includes partitioning the processing volume into a plurality of zones along a first direction of the processing volume and a second direction of the processing volume. The second direction intersects the first direction. The plurality of zones have a first zone number (m), and a second zone number (n). The method includes determining a group number. The determining of the group number includes multiplying a first value by a second value. The first value correlates to a first zone number (m) of a plurality of zones and the second value correlates to a second zone number (n) of the plurality of zones. The method includes grouping the zones into groups having a number that is equal to the group number.

公开(公告)号：US20240018658A1

公开(公告)日：2024-01-18

申请号：US18085371

申请日：2022-12-20

Applicant: Applied Materials, Inc.

Inventor： Zuoming ZHU ,  Ala MORADIAN ,  Shu-Kwan LAU ,  John TOLLE ,  Manjunath SUBBANNA ,  Martin Jeffrey SALINAS ,  Chia Cheng CHIN ,  Thomas KIRSCHENHEITER ,  Saurabh CHOPRA

IPC: C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  C30B25/14 ,  C30B25/12 ,  C30B25/10 ,  C30B25/08

CPC classification number: C23C16/45591 ,  C23C16/458 ,  C23C16/46 ,  C30B25/14 ,  C30B25/12 ,  C30B25/10 ,  C30B25/08

Abstract: The present disclosure relates to flow guide structures and heat shield structures, and related methods, for deposition uniformity and process adjustability. In one implementation, an apparatus for substrate processing includes a chamber body that includes a processing volume. The apparatus includes one or more heat sources. The apparatus includes a flow guide structure positioned in the processing volume. The flow guide structure includes one or more first flow dividers that divide the processing volume into a plurality of flow levels, and one or more second flow dividers oriented to intersect the one or more first flow dividers and divide each flow level of the plurality of flow levels into a plurality of flow sections. The flow guide structure includes one or more third flow dividers oriented to intersect the one or more second flow dividers and divide the plurality of flow sections into a plurality of flow zones.

公开(公告)号：US20220364229A1

公开(公告)日：2022-11-17

申请号：US17317565

申请日：2021-05-11

Applicant: Applied Materials, Inc.

Inventor： Tetsuya ISHIKAWA ,  Swaminathan T. SRINIVASAN ,  Matthias BAUER ,  Manjunath SUBBANNA ,  Ala MORADIAN ,  Kartik Bhupendra SHAH ,  Errol Antonio C SANCHEZ ,  Michael R. RICE ,  Peter REIMER ,  Marc SHULL

IPC: C23C16/44 ,  C23C16/458 ,  C23C16/46 ,  C30B25/12 ,  C30B25/16 ,  C30B25/10 ,  C23C16/52

Abstract: Embodiments described herein include processes and apparatuses relate to epitaxial deposition. A method for epitaxially depositing a material is provided and includes positioning a substrate on a substrate support surface of a susceptor within a process volume of a chamber body, where the process volume contains upper and lower chamber regions. The method includes flowing a process gas containing one or more chemical precursors from an upper gas inlet on a first side of the chamber body, across the substrate, and to an upper gas outlet on a second side of the chamber body, flowing a purge gas from a lower gas inlet on the first side of the chamber body, across the lower surface of the susceptor, and to a lower gas outlet on the second side of the chamber body, and maintaining a pressure of the lower chamber region greater than a pressure of the upper chamber region.

公开(公告)号：US20240337020A1

公开(公告)日：2024-10-10

申请号：US18747687

申请日：2024-06-19

Applicant: Applied Materials, Inc.

Inventor： Tetsuya ISHIKAWA ,  Swaminathan T. SRINIVASAN ,  Matthias BAUER ,  Ala MORADIAN ,  Manjunath SUBBANNA ,  Kartik Bhupendra SHAH ,  Errol Antonio C. SANCHEZ ,  Sohrab ZOKAEI ,  Michael R. RICE ,  Peter REIMER

IPC: C23C16/455 ,  B01J4/00 ,  C23C16/44

CPC classification number: C23C16/4558 ,  B01J4/005 ,  B01J4/008 ,  C23C16/4412 ,  C23C16/45587

Abstract: The present disclosure generally relates to gas inject apparatus for a process chamber for processing of semiconductor substrates. The gas inject apparatus include one or more gas injectors which are configured to be coupled to the process chamber. Each of the gas injectors are configured to receive a process gas and distribute the process gas across one or more gas outlets. The gas injectors include a plurality of pathways, a fin array, and a baffle array. The gas injectors are individually heated. A gas mixture assembly is also utilized to control the concentration of process gases flown into a process volume from each of the gas injectors. The gas mixture assembly enables the concentration as well as the flow rate of the process gases to be controlled.

公开(公告)号：US20230290614A1

公开(公告)日：2023-09-14

申请号：US17690644

申请日：2022-03-09

Applicant: Applied Materials, Inc.

Inventor： Dinkesh HUDERI SOMANNA ,  Ala MORADIAN ,  Colin John DICKINSON ,  Manjunath SUBBANNA

IPC: H01J37/32 ,  C23C14/34

CPC classification number: H01J37/32477 ,  C23C14/34 ,  H01J2237/332

Abstract: Embodiments of heat shield assemblies for a processing chamber are provided herein. In some embodiments, a heat shield assembly for a processing chamber includes: a first shield comprising a circular plate; a second shield coupled to the first shield and in a parallel configuration with the first shield, wherein the second shield has an outer diameter greater than an outer diameter of the first shield and the second shield includes a central opening having a diameter smaller than an outer diameter of the first shield; and a third shield coupled to and in a parallel configuration with the second shield, wherein an outer diameter of the third shield is greater than the diameter of the central opening of the second shield.

公开(公告)号：US20220364261A1

公开(公告)日：2022-11-17

申请号：US17317363

申请日：2021-05-11

Applicant: Applied Materials, Inc.

Inventor： Tetsuya ISHIKAWA ,  Swaminathan T. SRINIVASAN ,  Kartik Bhupendra SHAH ,  Ala MORADIAN ,  Manjunath SUBBANNA ,  Matthias BAUER ,  Peter REIMER ,  Michael R. RICE

IPC: C30B25/08 ,  C30B25/12 ,  C30B25/14 ,  C30B25/10 ,  C23C16/458 ,  C23C16/46 ,  C23C16/455

Abstract: The present disclosure generally relates to a process chamber for processing of semiconductor substrates. The process chamber includes an upper lamp assembly, a lower lamp assembly, a substrate support, an upper window disposed between the substrate support and the upper lamp assembly, a lower window disposed between the lower lamp assembly and the substrate support, an inject ring, and a base ring. Each of the upper lamp assembly and the lower lamp assembly include vertically oriented lamp apertures for the placement of heating lamps therein. The inject ring includes gas injectors disposed therethrough and the base ring includes a substrate transfer passage, a lower chamber exhaust passage, and one or more upper chamber exhaust passages. The gas injectors are disposed over the substrate transfer passage and across from the lower chamber exhaust passage and the one or more upper chamber exhaust passages.

公开(公告)号：US20250003112A1

公开(公告)日：2025-01-02

申请号：US18634248

申请日：2024-04-12

Applicant: Applied Materials, Inc.

Inventor： Ala MORADIAN ,  Zhepeng CONG ,  Vishwas Kumar PANDEY ,  Tao SHENG ,  Nimrod SMITH ,  Karthik RAMANATHAN ,  Manjunath SUBBANNA

IPC: C30B25/16 ,  C30B25/10 ,  G01K1/02 ,  G01K3/08

Abstract: A method and apparatus for virtually sensing a temperature of a hardware component of semiconductor processing chamber are disclosed. In one or more embodiments, a method of operation for a processing chamber suitable for use in semiconductor manufacturing includes receiving a process recipe for a manufacturing process and monitoring a first temperature of a first hardware component of the processing chamber using a sensor. The method further includes synthesizing, using a model of the processing chamber, a first virtual temperature of a second hardware component of the processing chamber based on the received process recipe and the first temperature of the first hardware component.

公开(公告)号：US20240021444A1

公开(公告)日：2024-01-18

申请号：US18074239

申请日：2022-12-02

Applicant: Applied Materials, Inc.

Inventor： Manjunath SUBBANNA ,  Ala MORADIAN ,  Errol Antonio C. SANCHEZ ,  Zuoming ZHU ,  Peydaye Saheli GHAZAL ,  Martin Jeffrey SALINAS ,  Aniketnitin PATIL ,  Raja Murali DHAMODHARAN ,  Shu-Kwan LAU

IPC: H01L21/67 ,  H01L21/20 ,  C23C16/44 ,  C23C16/455

CPC classification number: H01L21/67017 ,  H01L21/67103 ,  H01L21/20 ,  C23C16/4412 ,  C23C16/455 ,  H01L21/67739

Abstract: The present disclosure relates to batch processing apparatus, systems, and related methods and structures for epitaxial deposition operations. In one implementation, an apparatus for substrate processing includes a cassette. The cassette is at least partially supported by a pedestal assembly. The cassette includes a plurality of levels arranged vertically with respect to each other, each level of the plurality of levels including a support surface configured to support a substrate. A level spacing between adjacent levels of the plurality of levels is 25 mm or higher, and the level spacing is defined between the support surfaces of the adjacent levels.

公开(公告)号：US20220367216A1

公开(公告)日：2022-11-17

申请号：US17317684

申请日：2021-05-11

Applicant: Applied Materials, Inc.

Inventor： Tetsuya ISHIKAWA ,  Swaminathan T. SRINIVASAN ,  Matthias BAUER ,  Ala MORADIAN ,  Manjunath SUBBANNA ,  Kartik Bhupendra SHAH ,  Kostiantyn ACHKASOV ,  Errol Antonio C. SANCHEZ ,  Michael R. RICE ,  Marc SHULL ,  Ji-Dih HU

IPC: H01L21/67 ,  C23C16/44

Abstract: The present disclosure generally relates to an epitaxial chamber for processing of semiconductor substrates. In one example, the epitaxial chamber has a chamber body assembly. The chamber body assembly includes a lower window and an upper window, wherein chamber body assembly, the lower window and the upper window enclose an internal volume. A susceptor assembly is disposed in the internal volume. The epitaxial chamber also has a plurality of temperature control elements. The plurality of temperature control elements include one or more of an upper lamp module, a lower lamp module, an upper heater, a lower heater, or a heated gas passage.