公开(公告)号：US20040065645A1

公开(公告)日：2004-04-08

申请号：US10267711

申请日：2002-10-08

申请人： Applied Materials, Inc.

发明人： Michael Welch ,  Paul E. Luscher ,  Siamak Salimian ,  Rolf Guenther ,  Zhong Qiang Hua ,  Son Phi ,  Peter Loewenhardt

IPC分类号： B23K010/00 ,  H05B001/02

CPC分类号： H01L21/67248 ,  H01J37/32458 ,  H01J37/32522 ,  H01L21/67109

摘要： The temperature of a plasma chamber of a semiconductor fabrication tool is maintained substantially constant utilizing a variety of techniques, separately or in combination. One technique is to provide the exterior surface of the plasma chamber dome with a plurality of fins projecting into high velocity regions of an overlying airflow in order to dissipate heat from the chamber. Ducting defined by cover overlying the exposed exterior surface of the dome may also feature projecting lips or an airfoil to place high velocity components of the airflow into contact within the exterior dome surface and the fins. Other techniques include employing a high speed fan to control airflow circulation, and the use of temperature sensors in communication the fan through a processor to control fan speed and thereby regulate chamber temperature.

公开(公告)号：US20040231798A1

公开(公告)日：2004-11-25

申请号：US10825831

申请日：2004-04-16

申请人： Applied Materials, Inc.

发明人： Sudhir Gondhalekar ,  Padmanabhan Krishnaraj ,  Tom K. Cho ,  Muhammad Rasheed ,  Hemant Mungekar ,  Thanh N. Pham ,  Zhong Qiang Hua

IPC分类号： C23F001/00

CPC分类号： H01L21/67109 ,  H01L21/67017

摘要： A replaceable gas nozzle is insertable in a gas distributor ring of a substrate processing chamber and that can be shielded within the chamber. The replaceable gas nozzle has a longitudinal ceramic body having a channel to direct the flow of the gas into the chamber. The ceramic body includes a first external thread to mate with the gas distributor ring, and a second external thread to receive a heat shield. The channel has an inlet to receive the gas from the gas distributor ring and a pinhole outlet to release the gas into the chamber. A heat shield can be used to shield the nozzle extending into the chamber. The heat shield has a hollow member configured to be coupled with the nozzle that has an internal dimension sufficiently large to be disposed around at least a portion of the nozzle. The hollow member also has an extension which projects distally of the outlet of the nozzle and a heat shield opening for the process gas to flow therethrough from the nozzle outlet.

摘要翻译： 可替换的气体喷嘴可插入基板处理室的气体分配器环中并且可以在室内被屏蔽。 可更换气体喷嘴具有纵向陶瓷体，该纵向陶瓷体具有用于引导气体流入室的通道。 陶瓷体包括与气体分配器环配合的第一外螺纹和用于接纳隔热罩的第二外螺纹。 通道具有用于从气体分配器环接收气体的入口和用于将气体释放到室中的针孔出口。 可以使用隔热罩来屏蔽延伸到腔室中的喷嘴。 隔热罩具有中空构件，其构造成与喷嘴联接，其具有足够大的内部尺寸以设置在喷嘴的至少一部分周围。 中空构件还具有从喷嘴的出口向远侧突出的延伸部和用于处理气体的热屏蔽开口从喷嘴出口流过。

公开(公告)号：US20030203637A1

公开(公告)日：2003-10-30

申请号：US10137132

申请日：2002-04-30

申请人： Applied Materials, Inc.

发明人： Zhong Qiang Hua ,  Dong Qing Li ,  Zhengquan Tan ,  Zhuang Li ,  Michael Chiu Kwan ,  Bruno Geoffrion ,  Padmanabhan Krishnaraj

IPC分类号： H01L021/311

CPC分类号： H01L21/02164 ,  C23C16/045 ,  C23C16/401 ,  C23C16/402 ,  C23C16/507 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/76229

摘要： A method of depositing a high density plasma silicon oxide layer having improved gapfill capabilities. In one embodiment the method includes flowing a process gas consisting of a silicon-containing source, an oxygen-containing source and helium into a substrate processing chamber and forming a plasma from the process gas. The ratio of the flow rate of the helium with respect to the combined flow rate of the silicon source and oxygen source is between 0.5:1 and 3.0:1 inclusive. In one particular embodiment, the process gas consists of monosilane (SiH4), molecular oxygen (O2) and helium.

摘要翻译： 一种沉积具有改进的间隙填充能力的高密度等离子体氧化硅层的方法。 在一个实施例中，该方法包括将由含硅源，含氧源和氦组成的工艺气体流入衬底处理室并从工艺气体形成等离子体。 氦流量相对于硅源和氧源的组合流量的比率在0.5:1和3.0:1之间。 在一个具体实施方案中，工艺气体由单硅烷（SiH 4），分子氧（O 2）和氦组成。

公开(公告)号：US20040126952A1

公开(公告)日：2004-07-01

申请号：US10630989

申请日：2003-07-28

申请人： APPLIED MATERIALS, INC.

发明人： Sudhir Gondhalekar ,  Padmanabhan Krishnaraj ,  Tom K. Cho ,  Muhammad Rasheed ,  Hemant Mungekar ,  Thanh N. Pham ,  Zhong Qiang Hua

IPC分类号： H01L021/8238

CPC分类号： H01L21/67017 ,  H01L21/67109

摘要： The present invention is directed to improving defect performance in semiconductor processing systems. In specific embodiments, an apparatus for processing semiconductor substrates comprises a chamber defining a processing region therein, and a substrate support disposed in the chamber to support a semiconductor substrate. At least one nozzle extends into the chamber to introduce a process gas into the chamber through a nozzle opening. The apparatus comprises at least one heat shield, each of which is disposed around at least a portion of one of the at least one nozzle. The heat shield has an extension which projects distally of the nozzle opening of the nozzle and which includes a heat shield opening for the process gas to flow therethrough from the nozzle opening. The heat shield decreases the temperature of nozzle in the processing chamber for introducing process gases therein to reduce particles.

摘要翻译： 本发明旨在改善半导体处理系统中的缺陷性能。 在具体实施例中，用于处理半导体衬底的设备包括限定其中的处理区域的腔室和设置在腔室中以支撑半导体衬底的衬底支撑件。 至少一个喷嘴延伸到室中以通过喷嘴开口将工艺气体引入室中。 该装置包括至少一个隔热罩，每个隔热罩设置在至少一个喷嘴之一的至少一部分周围。 隔热罩具有向喷嘴的喷嘴开口向远侧突出的延伸部分，其包括用于工艺气体从喷嘴开口流过的隔热开口。 隔热罩降低了处理室中的喷嘴的温度，用于将工艺气体引入其中以减少颗粒。

公开(公告)号：US20030029475A1

公开(公告)日：2003-02-13

申请号：US10153315

申请日：2002-05-21

申请人： APPLIED MATERIALS, INC., A Delaware corporation

发明人： Zhong Qiang Hua ,  Zhengquan Tan ,  Zhuang Li ,  Kent Rossman

IPC分类号： C25F003/30 ,  C25F001/00

CPC分类号： B08B7/0035 ,  C23C16/4405 ,  Y10S438/905

摘要： A process for removing unwanted deposition build-up from one or more interior surfaces of a substrate processing chamber after depositing a layer of material over a substrate disposed in the chamber. In one embodiment the process comprises transferring the substrate out of the chamber; flowing a first gas into the substrate processing chamber and forming a plasma within the chamber from the first gas in order to heat the chamber; and thereafter, extinguishing the plasma, flowing an etchant gas into a remote plasma source, forming reactive species from the etchant gas and transporting the reactive species into the substrate processing chamber to etch the unwanted deposition build-up.

摘要翻译： 一种在将材料层沉积在设置在腔室中的衬底上之后，从衬底处理室的一个或多个内表面去除不想要的沉积积累的过程。 在一个实施例中，该方法包括将衬底转移出腔室; 将第一气体流入基板处理室，并在第一气体内在室内形成等离子体，以便加热室; 然后熄灭等离子体，将蚀刻剂气体流入远程等离子体源，从蚀刻剂气体形成反应物质并将反应物质输送到衬底处理室中以蚀刻不需要的沉积物积聚。