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公开(公告)号：US20180306728A1
公开(公告)日：2018-10-25
申请号：US15343090
申请日：2016-11-03
Applicant: Applied Materials Israel Ltd.
Inventor： Yotam SOFER , Idan KAIZERMAN
CPC classification number: G01N21/8851 , G01N21/9501 , G01N2021/8858
Abstract: Examining an object, comprising: receiving potential defects, each associated with a location; performing first clustering of the potential defects to obtain first and second subsets, the clustering performed such that potential defects in the first subset are denser in a physical area than potential defects in the second subset; automatically assigning first validity probabilities to potential defects in the first and second subsets; selecting for review potential defects from the first and second subsets, according to a third policy, and in accordance with a strategy for combining top elements and randomly selected elements from the merged list; receiving indications for potential defects in part of the potential defect lists, subsequent to potential defects being reviewed; updating the policies in accordance with validation or classification of items in the first and second subsets; and repeating said assigning, selecting, receiving and updating with the updated policies, until a stopping criteria is observed.
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公开(公告)号：US20190293569A1
公开(公告)日：2019-09-26
申请号：US15926990
申请日：2018-03-20
Applicant: Applied Materials Israel Ltd.
Inventor： Ariel HIRSZHORN , Yotam SOFER
IPC: G01N21/95 , G01N21/956 , G06T7/00
Abstract: Samples at a semiconductor wafer that have been reviewed by a review tool may be identified. Furthermore, a candidate sample at the semiconductor wafer that has not been reviewed by the review tool may be identified. A location of the candidate sample at the semiconductor wafer may and a number of the samples that have been reviewed that are at locations proximate to the location of the candidate sample may be determined. The candidate sample may be selected for review by the review tool based on the number of the plurality of samples that are at locations proximate to the location of the candidate sample.
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Patent Agency Ranking
公开(公告)号：US20190067134A1
公开(公告)日：2019-02-28
申请号：US15685781
申请日：2017-08-24
Applicant: Applied Materials Israel Ltd.
Inventor： Yotam SOFER , Ariel HIRSZHORN
Abstract: There is provided a method of examining defects in a semiconductor specimen and a system thereof. The method comprises: processing a first defect map obtained for a first semiconductor specimen to assign cluster-seed (CS) scores to at least some of the classified defects presented therein, wherein a CS score of a given defect is indicative of a number of neighboring defects classified to the same class as the given defect; upon obtaining a second defect map for a second semiconductor specimen, using the CS scores assigned to the at least some of the classified defects presented in the first defect map to select, among defects presented in the second defect map, defects for review, wherein the first defect map and the second defect map present respective defects in an attribute hyperspace; and reviewing defects selected in the second defect map, thereby obtaining classified defects presented in the second semiconductor specimen.
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公开(公告)号：US20200075434A1
公开(公告)日：2020-03-05
申请号：US16676216
申请日：2019-11-06
Applicant: Applied Materials Israel Ltd.
Inventor： Yotam SOFER , Ariel HIRSZHORN
Abstract: A first defect map representing defects in a first semiconductor specimen in an attribute hyperspace may be received. Scores may be assigned to classified defects in the first defect map where an assigned score of a given defect of the classified defects in the first defect map is indicative of a number of defects within a threshold distance in the attribute hyperspace to the given defect in the first defect map that are classified to a same defect class as the given defect. A second defect map representing defects in a second semiconductor specimen in the attribute hyperspace may be received. Defects in the second defect map may be selected for review based on the scores assigned to the classified defects in the first defect map. The selected defects in the second defect map may be selected for classification.
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公开(公告)号：US20190355628A1
公开(公告)日：2019-11-21
申请号：US16429533
申请日：2019-06-03
Applicant: Applied Materials Israel Ltd.
Inventor： Idan KAIZERMAN , Yotam SOFER
IPC: H01L21/66 , G03F7/20 , H01J37/304 , H01J37/317 , H01J37/28 , H01J37/22
Abstract: A method for process analysis includes acquiring first inspection data, using a first inspection modality, with respect to a substrate having multiple instances of a predefined pattern of features formed thereon using different, respective sets of process parameters. Characteristics of defects identified in the first inspection data are processed so as to select a first set of defect locations in which the first inspection data are indicative of an influence of the process parameters on the defects. Second inspection data are acquired, using a second inspection modality having a finer resolution than the first inspection modality, of the substrate at the locations in the first set. The defects appearing in the second inspection data are analyzed so as to select, from within the first set of the locations, a second set of the locations in which the second inspection data are indicative of an optimal range of the process parameters.
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公开(公告)号：US20210239623A1
公开(公告)日：2021-08-05
申请号：US16782005
申请日：2020-02-04
Applicant: Applied Materials Israel Ltd.
Inventor： Yotam SOFER , Shaul ENGLER , Boaz COHEN , Saar SHABTAY , Amir BAR , Marcelo Gabriel BACHER
IPC: G01N21/88
Abstract: A system, method and computer readable medium for examining a specimen, the method comprising: obtaining defects of interest (DOIs) and false alarms (FAs) from a review subset selected from a group of potential defects received from an inspection tool, each potential defect is associated with attribute values defining a location of the potential defect in an attribute space; generating a representative subset of the group, comprising potential defects selected in accordance with a distribution of the potential defects within the attribute space, and indicating the potential defects in the representative subset as FA; and upon training a classifier using data informative of the attribute values of the DOIs, the potential defects of the representative subset, and respective indications thereof as DOIs or FAs, applying the classifier to at least some of the potential defects to obtain an estimation of a number of expected DOIs in the specimen.
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公开(公告)号：US20160284579A1
公开(公告)日：2016-09-29
申请号：US14666183
申请日：2015-03-23
Applicant: Applied Materials Israel Ltd.
Inventor： Idan KAIZERMAN , Yotam SOFER
CPC classification number: H01L22/12 , G03F7/70558 , G03F7/70641 , G03F7/7065 , H01J37/222 , H01J37/28 , H01J37/304 , H01J37/3174 , H01J2237/221 , H01J2237/2817 , H01J2237/30416 , H01J2237/30433 , H01J2237/30461 , H01J2237/31798 , H01L22/20
Abstract: A method for process analysis includes acquiring first inspection data, using a first inspection modality, with respect to a substrate having multiple instances of a predefined pattern of features formed thereon using different, respective sets of process parameters. Characteristics of defects identified in the first inspection data are processed so as to select a first set of defect locations in which the first inspection data are indicative of an influence of the process parameters on the defects. Second inspection data are acquired, using a second inspection modality having a finer resolution than the first inspection modality, of the substrate at the locations in the first set. The defects appearing in the second inspection data are analyzed so as to select, from within the first set of the locations, a second set of the locations in which the second inspection data are indicative of an optimal range of the process parameters.
Abstract translation: 一种用于处理分析的方法包括：使用第一检查模式，使用不同的各组工艺参数，获得关于其上形成有预定图案特征的多个实例的基板的第一检查数据。 处理在第一检查数据中识别的缺陷的特征，以便选择第一组缺陷位置，其中第一检查数据表示处理参数对缺陷的影响。 使用具有比第一检查模式更精细的分辨率的第二检查模式在第一组中的位置获取第二检查数据。 分析出现在第二检查数据中的缺陷，以从第一组位置内选择第二组位置，其中第二检查数据表示过程参数的最佳范围。
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