Abstract:
The dichotomy presented in threshold logic gates by the desirability of a large gap or unit step near the threshold point, coupled with the desirability of a small overall signal swing on the threshold element for a large fan-in, is minimized by replacing the usual linear summing resistor with a nonlinear variable impedance element, such as a field effect transistor in one illustrative embodiment, having a low impedance below the gate threshold and a high impedance in the gap.
Abstract:
In shift registers there is generally provided an intermediate storage function between stages to enable each stage to transfer its information prior to accepting the next incoming signal, i.e., to avoid a race condition. In accordance with this invention there is provided between each stage a coupling circuit comprising in series a Schottky-barrier (SB) diode, an emitterfollower transistor, and a second diode. While the stages are in the holding mode, the state of stage N is coupled through the SB diode, stored on the capacitance at the base of the emitterfollower, and isolated from stage N+1 by the second diode. Upon application of a shift signal, the SB diode immediately turns off and thereby isolates the Nth stage from the emitter-follower. The second diode turns on; and the signal which was stored at the base of the emitter-follower is coupled through the second diode to set the state of stage N+1.