公开(公告)号：US20160300866A1

公开(公告)日：2016-10-13

申请号：US14436563

申请日：2014-09-20

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Chunping LONG ,  Jang Soon IM ,  Chien Hung LIU

IPC: H01L27/12 ,  G02F1/1362 ,  G02F1/1343 ,  H01L27/32 ,  G02F1/1368

CPC classification number: H01L27/1288 ,  G02F1/134363 ,  G02F1/136227 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/136231 ,  G02F2001/13625 ,  H01L21/26513 ,  H01L21/266 ,  H01L21/77 ,  H01L27/12 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1255 ,  H01L27/1274 ,  H01L27/3248 ,  H01L27/3262 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/66757 ,  H01L29/78618 ,  H01L29/78675

Abstract: An array substrate, a manufacturing method thereof, a display device, a thin-film transistor (TFT) and a manufacturing method thereof are disclosed. The method for manufacturing the TFT comprises: forming a pattern of an active layer and a gate insulating layer provided with a metal film on a base substrate patterning the metal film by one patterning process, and forming patterns of a gate electrode, a source electrode, a drain electrode, a gate line and a data line; forming a passivation layer on the base substrate; patterning the passivation layer by one patterning process, and forming a source contact hole, a drain contact hole and a bridge structure contact hole; and forming a transparent conductive film on the base substrate, and removing partial transparent conductive film to form a source contact portion, a drain contact portion, a pixel electrode and a bridge structure.

Abstract translation: 公开了阵列基板及其制造方法，显示装置，薄膜​​晶体管（TFT）及其制造方法。 TFT的制造方法包括：在基板上形成有源层的图形和设置有金属膜的栅极绝缘层，通过一个图案化工艺图案化金属膜，形成栅电极，源电极， 漏电极，栅极线和数据线; 在基底基板上形成钝化层; 通过一个图案化工艺图案化钝化层，并形成源极接触孔，漏极接触孔和桥接结构接触孔; 在基底基板上形成透明导电膜，除去部分透明导电膜，形成源极接触部，漏极接触部，像素电极和桥接结构。

公开(公告)号：US20170053954A1

公开(公告)日：2017-02-23

申请号：US15308229

申请日：2016-02-23

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Chien Hung LIU ,  Yu Cheng CHAN

IPC: H01L27/12

CPC classification number: H01L27/1288 ,  H01L27/1274

Abstract: Preparation methods for a thin-film layer pattern, thin-film transistor and array substrate. The preparation method for a thin-film layer pattern includes: providing a mask plate, the mask plate including a mask plate body and a hollowed portion arranged on same; placing the mask plate onto a substrate, and allowing a projection of the hollowed portion on the substrate to be overlapped with a projection of a thin-film layer pattern to be formed on the substrate; forming a thin film on the substrate on which the mask plate (10) is placed, wherein a first thin-film portion formed at the hollowed portion is disconnected from a second thin-film portion formed on the mask plate body; and stripping the mask plate, and reserving the first thin-film portion to form the thin-film layer pattern.

Abstract translation: 薄膜层图案，薄膜晶体管和阵列基板的制备方法。 薄膜层图案的制备方法包括：提供掩模板，所述掩模板包括掩模板主体和布置在其上的中空部分; 将掩模板放置在基板上，并且允许基板上的中空部分的突出部与要形成在基板上的薄膜层图案的突起重叠; 在其上放置有掩模板（10）的基板上形成薄膜，其中形成在中空部分的第一薄膜部分与形成在掩模板体上的第二薄膜部分断开; 剥离掩模板，并且保留第一薄膜部分以形成薄膜层图案。

公开(公告)号：US20210167156A1

公开(公告)日：2021-06-03

申请号：US16066205

申请日：2017-12-05

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Xuefei SUN ,  Zhengliang LI ,  Bin ZHANG ,  Yu-Cheng CHAN ,  Chien Hung LIU

IPC: H01L27/32 ,  H01L29/786

Abstract: A display substrate and a manufacture method thereof, a display device are disclosed. The display substrate includes a base substrate, a thin film transistor on the base substrate and a light shielding layer on the base substrate. The light shielding layer includes a first light shielding layer and a second light shielding layer that are stacked; an orthographic projection of an active layer of the thin film transistor on the base substrate is within an orthogonal projection of the light shielding layer on the base substrate, and the second light shielding layer includes nanoparticles capable of absorbing light in a specific wavelength range.

公开(公告)号：US20180301565A1

公开(公告)日：2018-10-18

申请号：US15820594

申请日：2017-11-22

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Chien Hung LIU

IPC: H01L29/786 ,  H01L29/423 ,  H01L21/265 ,  H01L21/266 ,  H01L29/49 ,  H01L21/28 ,  H01L29/66

CPC classification number: H01L29/42384 ,  H01L21/26513 ,  H01L21/266 ,  H01L21/28158 ,  H01L29/4908 ,  H01L29/66492 ,  H01L29/66757 ,  H01L29/66969 ,  H01L29/78627 ,  H01L29/78696 ,  H01L2029/42388

Abstract: A thin-film transistor (TFT) and a manufacturing method thereof, an array substrate and a display device are provided. The TFT includes: a base substrate; a gate electrode and a gate insulating layer, disposed on the base substrate; and an active layer, wherein the gate insulating layer is disposed between the active layer and the gate electrode; the active layer includes a channel region and a doped region disposed on at least one side of the channel region; and the gate insulating layer is provided with a protrusion which is disposed between the doped region and the gate electrode.

公开(公告)号：US20160307978A1

公开(公告)日：2016-10-20

申请号：US14785777

申请日：2015-03-12

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Zheng LIU ,  Xiaoyong LU ,  Xiaolong LI ,  Chien Hung LIU ,  Chunping LONG

IPC: H01L27/32 ,  H01L51/56 ,  H01L51/52

CPC classification number: H01L27/3262 ,  H01L27/1248 ,  H01L27/1274 ,  H01L27/1285 ,  H01L27/3246 ,  H01L51/5206 ,  H01L51/5221 ,  H01L51/56 ,  H01L2227/323 ,  H01L2251/558

Abstract: A manufacturing method of an array substrate, an array substrate and a display device are provided. The manufacturing method of the array substrate comprises: forming a first conductive thin film (100) on a base substrate (1); and patterning the first conductive thin film (100), to form a pattern of a cathode (11) on a first region (11) of the base substrate (1), and form a pattern of a gate electrode (4) on a second region (12) of the base substrate (1). Complexity and process time of a fabrication process of an array substrate can be reduced, a fabrication process of an organic electroluminescent panel can be simplified, and production cost can be reduced, by forming a cathode layer of a light-emitting diode and a gate electrode layer of a thin film transistor in different regions of the base substrate at the same time by one patterning process.

Abstract translation: 提供阵列基板，阵列基板和显示装置的制造方法。 阵列基板的制造方法包括：在基底（1）上形成第一导电薄膜（100）; 以及图案化所述第一导电薄膜（100），以在所述基底基板（1）的第一区域（11）上形成阴极（11）的图案，并在第二导电薄膜（1）上形成栅电极（4）的图案 基底（1）的区域（12）。 可以减少阵列基板的制造工艺的复杂性和处理时间，通过形成发光二极管和栅电极的阴极层，可以简化有机电致发光面板的制造工艺，并且可以降低生产成本 通过一个图案化工艺同时在基底基板的不同区域中的薄膜晶体管层。

公开(公告)号：US20160254287A1

公开(公告)日：2016-09-01

申请号：US14769180

申请日：2014-12-29

Applicant: BOE Technology Group Co., Ltd.

Inventor： Zuqiang WANG ,  Chien Hung LIU

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/66 ,  H01L29/423

CPC classification number: H01L27/124 ,  H01L27/12 ,  H01L27/1244 ,  H01L27/1248 ,  H01L29/06 ,  H01L29/42364 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/786

Abstract: A thin-film transistor (TFT), a manufacturing method thereof, display substrate and a display device are disclosed. The TFT includes: an active layer, gate insulating layer, gate electrode, an interlayer dielectric layer, source electrode and a drain electrode disposed on a base substrate in sequence. The source electrode and drain electrode are respectively connected with the active layer via a through hole exposing the active layer; the gate insulating layer at least includes a silicon oxide layer and a silicon nitride layer in a two-layer structure; the interlayer dielectric layer at least includes silicon oxide layers and silicon nitride layers in a four-layer structure; the silicon oxide layers and silicon nitride layers of the gate insulating layer and the interlayer dielectric layer are alternately arranged; and the dimension of one side of the through hole away from the base substrate is greater than that of one side close to the base substrate.

Abstract translation: 公开了薄膜晶体管（TFT），其制造方法，显示基板和显示装置。 TFT包括：有源层，栅极绝缘层，栅极电极，层间电介质层，源电极和设置在基底基板上的漏电极。 源电极和漏极分别通过暴露有源层的通孔与有源层连接; 栅极绝缘层至少包括二层结构的氧化硅层和氮化硅层; 层间绝缘层至少包括四层结构的氧化硅层和氮化硅层; 栅极绝缘层和层间电介质层的氧化硅层和氮化硅层交替排列; 并且通孔的远离基底的一侧的尺寸大于靠近基底的一侧的尺寸。