摘要:
The present invention provides a micromechanical or microoptomechanical structure produced by a process comprising defining the structure in a single-crystal silicon layer separated by an insulator layer from a substrate layer; selectively etching the single crystal silicon layer; depositing and etching a polysilicon layer on the insulator layer, with remaining polysilicon forming mechanical elements of the structure; metalizing a backside of the structure; and releasing the formed structure.
摘要:
The present invention provides a micromechanical or microoptomechanical structure. The structure is produced by a process comprising defining a pattern on a single crystal silicon layer separated by an insulator layer from a substrate layer; defining a structure in the single-crystal silicon layer; depositing and etching a polysilicon layer on the single crystal silicon layer, with remaining polysilcon forming mechanical or optical elements of the structure; and releasing the formed structure.
摘要:
The present invention provides a micromechanical or microoptomechanical structure. The structure is produced by a process comprising defining a structure on a single crystal silicon layer separated by an insulator layer from a substrate layer; depositing and etching a polysilicon layer on the single crystal silicon layer, with remaining polysilcon forming mechanical or optical elements of the structure; exposing a selected area of the single crystal silicon layer; and releasing the formed structure.
摘要:
The present invention provides a micromechanical or microoptomechanical structure. The structure is produced by a process comprising defining a structure on a single crystal silicon layer separated by an insulator layer from a substrate layer; depositing and etching a polysilicon layer on the single crystal silicon layer, with remaining polysilicon forming mechanical or optical elements of the structure; exposing a selected area of the single crystal silicon layer; and releasing the formed structure.
摘要:
A device structure is defined in a single-crystal silicon (SCS) layer separated by an insulator layer, such as an oxide layer, from a handle wafer. The SCS can be attached to the insulator by wafer bonding, and is selectively etched, as by photolithographic patterning and dry etching. A sacrificial oxide layer can be deposited on the etched SCS, on which polysilicon can be deposited. A protective oxide layer is deposited, and CMOS circuitry and sensors are integrated. Silicon microstructures with sensors connected to CMOS circuitry are released. In addition, holes can be etched through the sacrificial oxide layer, sacrificial oxide can be deposited on the etched SCS, polysilicon can be deposited on the sacrificial oxide, PSG can be deposited on the polysilicon layer, which both can then be patterned.
摘要:
A microoptomechanical structure produced by defining a microoptical structure in a single-crystal silicon layer separated by an insulator layer from a handle wafer, such as a SOI wafer, selectively etching the single crystal silicon layer, depositing a sacrificial oxide layer on the etched single crystal silicon layer, depositing and etching a polysilicon layer on the sacrificial oxide layer, with remaining polysilcon forming hinge elements, and releasing formed microoptical structures. Embodiments use an oxide as an insulator, and other embodiments provide for wafer bonding of the silicon layer to the insulator layer.
摘要:
A tunable microelectromechanical (MEMS) spectrophotometer with a rotating cylindrical reflective diffraction grating is integrated with a photodetector and an optical fiber light source on a Rowland circle on a monolithic silicon substrate.
摘要:
A waveguide structure has a base having a base height (h) above a substrate and a rectangular waveguide having a waveguide height (H) above the substrate and a waveguide width (W) between opposing sides of the waveguide.
摘要:
A thermal actuator comprises a substantially straight beam. The beam has a beam length and a beam mid-point. The beam comprises a plurality of beam segments with beam segment lengths. Each beam segment has a beam segment neutral axis, thus forming a corresponding plurality of beam segment neutral axes. The beam segment neutral axes are offset along the beam length based on a predetermined pattern. As the beam is heated by an included heating means, the beam buckles. The buckling of the beam, in turn, causes the beam mid-point to translate or move in the predetermined direction. The beam mid-point movement, in turn, operates an included optical waveguide switch. The heating means comprises any of Joule heating, eddy current heating, conduction heating, convection heating and radiation heating.
摘要:
A thermal actuator comprises a plurality of substantially straight and parallel beams arranged to form a beam array. The midpoint of each beam is attached or coupled to an orthogonal coupling beam. Each array beam has a beam heating parameter with a corresponding beam heating parameter value. The beam heating parameter values vary across the beam array based on a predetermined pattern. As the beams are heated by an included heating means, the distribution of beam temperatures in the beam array becomes asymmetric, thus causing the beam array to buckle. The buckling of the beams in the beam array, in turn, causes the attached coupling beam to move in a predetermined direction. The coupling beam motion, in turn, operates an included optical waveguide switch. The beams in the beam array are heated by any of Joule heating, eddy current heating, conduction heating, convection heating and radiation heating.