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    Microelectromechanical structures defined from silicon on insulator wafers
    5.
    发明授权
    Microelectromechanical structures defined from silicon on insulator wafers 有权
    由绝缘体上硅晶片定义的微机电结构

    公开(公告)号：US06362512B1

    公开(公告)日：2002-03-26

    申请号：US09468423

    申请日：1999-12-21

    申请人： Joel A. Kubby ,  Jingkuang Chen ,  Alex T. Tran

    发明人： Joel A. Kubby ,  Jingkuang Chen ,  Alex T. Tran

    IPC分类号： H01L2982

    CPC分类号： B81B3/0083 ,  B81C2201/0109 ,  B81C2201/019 ,  B81C2201/0191 ,  B81C2201/053 ,  G02B6/4214

    摘要： A device structure is defined in a single-crystal silicon (SCS) layer separated by an insulator layer, such as an oxide layer, from a handle wafer. The SCS can be attached to the insulator by wafer bonding, and is selectively etched, as by photolithographic patterning and dry etching. A sacrificial oxide layer can be deposited on the etched SCS, on which polysilicon can be deposited. A protective oxide layer is deposited, and CMOS circuitry and sensors are integrated. Silicon microstructures with sensors connected to CMOS circuitry are released. In addition, holes can be etched through the sacrificial oxide layer, sacrificial oxide can be deposited on the etched SCS, polysilicon can be deposited on the sacrificial oxide, PSG can be deposited on the polysilicon layer, which both can then be patterned.

    摘要翻译： 器件结构被限定在由来自处理晶片的绝缘体层（例如氧化物层）分离的单晶硅（SCS）层中。 SCS可以通过晶片接合连接到绝缘体，并且通过光刻图案和干蚀刻被选择性地蚀刻。 可以在蚀刻的SCS上沉积牺牲氧化物层，在其上沉积多晶硅。 沉积保护性氧化物层，并集成CMOS电路和传感器。 释放了连接到CMOS电路的传感器的硅微结构。 此外，可以通过牺牲氧化物层蚀刻孔，牺牲氧化物可以沉积在蚀刻的SCS上，多晶硅可以沉积在牺牲氧化物上，PSG可以沉积在多晶硅层上，然后可以对其进行图案化。

    Method of forming protrusions on single crystal silicon structures built on silicon-on-insulator wafers
    6.
    发明授权
    Method of forming protrusions on single crystal silicon structures built on silicon-on-insulator wafers 失效
    在绝缘体上硅晶片上形成的单晶硅结构上形成突起的方法

    公开(公告)号：US06413793B1

    公开(公告)日：2002-07-02

    申请号：US09858469

    申请日：2001-05-17

    申请人： Chuang-Chia Lin ,  Peter M. Gulvin ,  Alex T. Tran ,  Nena Liakopoulos

    发明人： Chuang-Chia Lin ,  Peter M. Gulvin ,  Alex T. Tran ,  Nena Liakopoulos

    IPC分类号： H01L2100

    CPC分类号： B81B3/001

    摘要： A semiconductor structure includes a substrate, a sacrificial layer formed on or over the substrate, and a structural layer formed on or over the sacrificial layer. At least one opening is formed in the structural layer. At least one opening is formed in the sacrificial layer below the at least one opening in the structural layer. The at least one opening in the structural layer and the at least one opening in the sacrificial layer are at least partially filled with a filler material. At least one portion of the structural layer is removed to define at least one microstructure. The sacrificial layer is removed such that the at least one microstructure is released from the substrate and the filler material forms one or more protrusions on the at least one microstructure, and/or one or more anchors anchoring the at least one microstructure to the substrate.

    摘要翻译： 半导体结构包括衬底，形成在衬底上或衬底上的牺牲层以及形成在牺牲层上或之上的结构层。 在结构层中形成至少一个开口。 在结构层中的至少一个开口下方的牺牲层中形成至少一个开口。 结构层中的至少一个开口和牺牲层中的至少一个开口至少部分地填充有填充材料。 去除结构层的至少一部分以限定至少一个微结构。 去除牺牲层，使得至少一个微结构从衬底释放并且填充材料在至少一个微结构上形成一个或多个突起，和/或一个或多个将至少一个微结构锚定到衬底的锚固件。

    Process for manufacture of microoptomechanical structures
    7.
    发明授权
    Process for manufacture of microoptomechanical structures 有权
    微机电结构的制造工艺

    公开(公告)号：US06379989B1

    公开(公告)日：2002-04-30

    申请号：US09468141

    申请日：1999-12-21

    申请人： Joel A. Kubby ,  Jingkuang Chen ,  Alex T. Tran

    发明人： Joel A. Kubby ,  Jingkuang Chen ,  Alex T. Tran

    IPC分类号： H01L2100

    CPC分类号： G02B6/43 ,  G02B6/4214

    摘要： A microoptomechanical structure produced by defining a microoptical structure in a single-crystal silicon layer separated by an insulator layer from a handle wafer, such as a SOI wafer, selectively etching the single crystal silicon layer, depositing a sacrificial oxide layer on the etched single crystal silicon layer, depositing and etching a polysilicon layer on the sacrificial oxide layer, with remaining polysilcon forming hinge elements, and releasing formed microoptical structures. Embodiments use an oxide as an insulator, and other embodiments provide for wafer bonding of the silicon layer to the insulator layer.

    摘要翻译： 通过在由诸如SOI晶片的处理晶片分离的绝缘体层的单晶硅层中限定微光学结构而产生的微机电结构，选择性地蚀刻单晶硅层，在蚀刻的单晶上沉积牺牲氧化物层 硅层，沉积和蚀刻牺牲氧化物层上的多晶硅层，形成铰链元件，并释放形成的微光学结构。 实施例使用氧化物作为绝缘体，并且其它实施例提供硅层与绝缘体层的晶片结合。