Microelectromechanical structures defined from silicon on insulator wafers
    5.
    发明授权
    Microelectromechanical structures defined from silicon on insulator wafers 有权
    由绝缘体上硅晶片定义的微机电结构

    公开(公告)号:US06362512B1

    公开(公告)日:2002-03-26

    申请号:US09468423

    申请日:1999-12-21

    IPC分类号: H01L2982

    摘要: A device structure is defined in a single-crystal silicon (SCS) layer separated by an insulator layer, such as an oxide layer, from a handle wafer. The SCS can be attached to the insulator by wafer bonding, and is selectively etched, as by photolithographic patterning and dry etching. A sacrificial oxide layer can be deposited on the etched SCS, on which polysilicon can be deposited. A protective oxide layer is deposited, and CMOS circuitry and sensors are integrated. Silicon microstructures with sensors connected to CMOS circuitry are released. In addition, holes can be etched through the sacrificial oxide layer, sacrificial oxide can be deposited on the etched SCS, polysilicon can be deposited on the sacrificial oxide, PSG can be deposited on the polysilicon layer, which both can then be patterned.

    摘要翻译: 器件结构被限定在由来自处理晶片的绝缘体层(例如氧化物层)分离的单晶硅(SCS)层中。 SCS可以通过晶片接合连接到绝缘体,并且通过光刻图案和干蚀刻被选择性地蚀刻。 可以在蚀刻的SCS上沉积牺牲氧化物层,在其上沉积多晶硅。 沉积保护性氧化物层,并集成CMOS电路和传感器。 释放了连接到CMOS电路的传感器的硅微结构。 此外,可以通过牺牲氧化物层蚀刻孔,牺牲氧化物可以沉积在蚀刻的SCS上,多晶硅可以沉积在牺牲氧化物上,PSG可以沉积在多晶硅层上,然后可以对其进行图案化。

    Process for manufacture of microoptomechanical structures
    6.
    发明授权
    Process for manufacture of microoptomechanical structures 有权
    微机电结构的制造工艺

    公开(公告)号:US06379989B1

    公开(公告)日:2002-04-30

    申请号:US09468141

    申请日:1999-12-21

    IPC分类号: H01L2100

    CPC分类号: G02B6/43 G02B6/4214

    摘要: A microoptomechanical structure produced by defining a microoptical structure in a single-crystal silicon layer separated by an insulator layer from a handle wafer, such as a SOI wafer, selectively etching the single crystal silicon layer, depositing a sacrificial oxide layer on the etched single crystal silicon layer, depositing and etching a polysilicon layer on the sacrificial oxide layer, with remaining polysilcon forming hinge elements, and releasing formed microoptical structures. Embodiments use an oxide as an insulator, and other embodiments provide for wafer bonding of the silicon layer to the insulator layer.

    摘要翻译: 通过在由诸如SOI晶片的处理晶片分离的绝缘体层的单晶硅层中限定微光学结构而产生的微机电结构,选择性地蚀刻单晶硅层,在蚀刻的单晶上沉积牺牲氧化物层 硅层,沉积和蚀刻牺牲氧化物层上的多晶硅层,形成铰链元件,并释放形成的微光学结构。 实施例使用氧化物作为绝缘体,并且其它实施例提供硅层与绝缘体层的晶片结合。

    Thermal actuator with offset beam segment neutral axes and an optical waveguide switch including the same
    9.
    发明授权
    Thermal actuator with offset beam segment neutral axes and an optical waveguide switch including the same 失效
    具有偏转光束段中性轴的热致动器和包括该中间轴的光波导开关

    公开(公告)号:US06985651B2

    公开(公告)日:2006-01-10

    申请号:US10772693

    申请日:2004-02-05

    IPC分类号: G02B6/26 G02B6/42 H01H37/00

    摘要: A thermal actuator comprises a substantially straight beam. The beam has a beam length and a beam mid-point. The beam comprises a plurality of beam segments with beam segment lengths. Each beam segment has a beam segment neutral axis, thus forming a corresponding plurality of beam segment neutral axes. The beam segment neutral axes are offset along the beam length based on a predetermined pattern. As the beam is heated by an included heating means, the beam buckles. The buckling of the beam, in turn, causes the beam mid-point to translate or move in the predetermined direction. The beam mid-point movement, in turn, operates an included optical waveguide switch. The heating means comprises any of Joule heating, eddy current heating, conduction heating, convection heating and radiation heating.

    摘要翻译: 热致动器包括基本上直的梁。 光束具有光束长度和光束中点。 梁包括具有梁段长度的多个梁段。 每个光束段具有光束段中性轴线,从而形成相应的多个光束段中性轴线。 光束段中性轴基于预定图案沿光束长度偏移。 当束被加热装置加热时,光束弯曲。 光束的弯曲又使光束中点在预定方向上平移或移动。 光束中点运动依次运行附带的光波导开关。 加热装置包括焦耳加热,涡流加热,传导加热,对流加热和辐射加热中的任何一种。

    Thermal actuator and an optical waveguide switch including the same
    10.
    发明授权
    Thermal actuator and an optical waveguide switch including the same 失效
    热致动器和包括其的光波导开关

    公开(公告)号:US06983088B2

    公开(公告)日:2006-01-03

    申请号:US10634941

    申请日:2003-08-05

    IPC分类号: G02B6/26 G02B6/42 H01H37/00

    摘要: A thermal actuator comprises a plurality of substantially straight and parallel beams arranged to form a beam array. The midpoint of each beam is attached or coupled to an orthogonal coupling beam. Each array beam has a beam heating parameter with a corresponding beam heating parameter value. The beam heating parameter values vary across the beam array based on a predetermined pattern. As the beams are heated by an included heating means, the distribution of beam temperatures in the beam array becomes asymmetric, thus causing the beam array to buckle. The buckling of the beams in the beam array, in turn, causes the attached coupling beam to move in a predetermined direction. The coupling beam motion, in turn, operates an included optical waveguide switch. The beams in the beam array are heated by any of Joule heating, eddy current heating, conduction heating, convection heating and radiation heating.

    摘要翻译: 热致动器包括布置成形成束阵列的多个基本上直的和平行的光束。 每个光束的中点附加或耦合到正交耦合光束。 每个阵列光束具有具有对应的光束加热参数值的光束加热参数。 光束加热参数值基于预定图案在波束阵列上变化。 当束被加热装置加热时,光束阵列中光束温度的分布变得不对称,从而使光束阵列发生弯曲。 光束阵列中的光束的弯曲又使连接的光束沿预定的方向移动。 耦合光束运动反过来操作包括的光波导开关。 光束阵列中的光束通过焦耳加热,涡流加热,传导加热,对流加热和辐射加热中的任何一种加热。