摘要:
An inspection apparatus inspecting a wafer on which a plurality of patterns are formed by a plurality of exposure shots, the inspection apparatus comprising: acquisition unit configured to acquire first information representing a positional relation between an inspection mark included in a pattern formed by a first exposure shot and an inspection mark included in a pattern formed by a second exposure shot, and second information representing a positional relation between the inspection mark included in the pattern formed by the second exposure shot and an inspection mark included in a pattern formed by a third exposure shot; and derivation unit configured to derive a linear component of an error caused by a reticle, and a linear component of an error caused by a position of a wafer, on the basis of the first information and the second information.
摘要:
A curved surface constituting a convex surface or a concave surface of each of a plurality of lenses includes at least a silicon nitride layer and another silicon nitride layer. An interlayer having a composition different from a composition of the silicon nitride layer and a composition of the other silicon nitride layer is arranged between the silicon nitride layer and the other silicon nitride layer, and a thickness of the interlayer is less than a thickness of the silicon nitride layer and a thickness of the other silicon nitride layer.
摘要:
A curved surface constituting a convex surface or a concave surface of each of a plurality of lenses includes at least a silicon nitride layer and another silicon nitride layer. An interlayer having a composition different from a composition of the silicon nitride layer and a composition of the other silicon nitride layer is arranged between the silicon nitride layer and the other silicon nitride layer, and a thickness of the interlayer is less than a thickness of the silicon nitride layer and a thickness of the other silicon nitride layer.
摘要:
The present invention provides a lithography apparatus which forms a pattern by sequentially irradiating a first region and a second region on a substrate with a beam, the apparatus including a beam detector configured to detect the beam, and a processor configured to obtain position information of the second region by giving a weight to first position information of the second region based on an output from the beam detector before irradiation of the first region with the beam, and giving a weight to second position information of the second region based on an output from the beam detector after the irradiation.
摘要:
Provided is a detection apparatus that detects a mark with a periodic structure and includes an illumination optical system configured to irradiate light on the mark; a light receiving optical system configured to receive a diffracted light from the mark when a relative position between the illumination optical system and the mark is changed in the measurement direction; and a photodetector configured to detect the diffracted light from the light receiving optical system. Here, a numerical aperture of the light receiving optical system in the measurement direction is larger than a numerical aperture of the light receiving optical system in the non-measurement direction in the plane on which the mark is formed.
摘要:
A lithography apparatus for substrate patterning, includes a substrate stage having a reference mark, an optical system irradiating the substrate with the charged particle beam, a first measurement device measuring a position of an alignment mark formed on the substrate, a second measurement device having an optical axis apart from an axis of the optical system by a distance shorter than that of the first measurement device, and measuring a position of the reference mark, a processor obtaining a base line of the first measurement device based on positions of the reference mark respectively measured by the first and second measurement device and a base line of the second measurement device, the position of the reference mark being measured by the second measurement device based on an optical signal obtained via the reference mark with the stage moved.
摘要:
An apparatus includes an optical system configured to irradiate a surface of a substrate with a beam, a control unit configured to control a position of the irradiation of the beam, and a first measurement unit and a second measurement unit each configured to measure a position of a mark formed on the substrate. The second measurement unit is placed at a position closer to an optical axis of the optical system than the first measurement unit is. Based on a position measurement value measured by the first measurement unit and position measurement values measured at different timings by the second measurement unit, the control unit controls the position of the beam irradiated to the substrate. The position measurement values measured at the different timings are values obtained from the same mark or values obtained from two marks adjacent to a common shot area.
摘要:
The present invention provides a drawing apparatus including a stage having a reference mark, and configured to hold a substrate and to be moved, a charged particle optical system, a first measuring device having an optical axis spaced apart from an axis of the charged particle optical system by a first distance and configured to measure a position of an alignment mark formed on the substrate, a second measuring device having an optical axis spaced apart from the axis of the charged particle optical system by a second distance and configured to measure a position of the reference mark, and a processor configured to obtain a baseline of the first measuring device based on positions of the reference mark respectively measured by the first measuring device and the second measuring device.
摘要:
The present invention provides an apparatus including an aperture stop including a first aperture configured to define an illumination condition for illuminating an illumination surface to a first condition, and a second aperture configured to define the illumination condition to a second condition, and fixed on a pupil plane of an illumination optical system, a light shielding plate, and a driving unit configured to positions the light shielding plate such that a shielding region shields a second path extending from a light source to the illumination surface through the second aperture, when setting the illumination condition to the first condition, and positions the light shielding plate such that the shielding region shields a first path extending from the light source to the illumination surface through the first aperture, when setting the illumination condition to the second condition.
摘要:
A method of manufacturing a semiconductor device by using an exposure apparatus having a reticle stage and a projection optical system includes a first period in which substrates are exposed by using a first reticle arranged on the reticle stage, a second period in which substrates are exposed by using a second reticle arranged on the reticle stage, and a third period which is between the first and second periods. The method includes changing, in at least part of the third period, the first reticle arranged on the reticle stage to the second reticle, and performing control, in the first and second periods, to adjust temperature distribution of an optical element of the projection optical system so as to reduce change in aberration of the projection optical system. The third period is shorter than the first period.