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    SHEET OF SEMICONDUCTING MATERIAL, SYSTEM FOR FORMING SAME, AND METHOD OF FORMING SAME
    3.
    发明申请
    SHEET OF SEMICONDUCTING MATERIAL, SYSTEM FOR FORMING SAME, AND METHOD OF FORMING SAME 审中-公开
    半导体材料，其形成系统及其形成方法

    公开(公告)号：US20140099232A1

    公开(公告)日：2014-04-10

    申请号：US13841995

    申请日：2013-03-15

    Applicant: Corning Incorporated

    Inventor： Samir Biswas ,  Douglass Lane Blanding ,  Glen Bennett Cook ,  Prantik Mazumder ,  Kamal Kishore Soni ,  Balram Suman

    IPC: H01L33/02 ,  H01L21/02

    CPC classification number: H01L33/02 ,  C30B15/08 ,  C30B29/06 ,  C30B29/08 ,  C30B29/42 ,  C30B29/64 ,  H01L21/02

    Abstract: A method of forming a sheet of semiconductor material utilizes a system. The system comprises a first convex member extending along a first axis and capable of rotating about the first axis and a second convex member spaced from the first convex member and extending along a second axis and capable of rotating about the second axis. The first and second convex members define a nip gap therebetween. The method comprises applying a melt of the semiconductor material on an external surface of at least one of the first and second convex members to form a deposit on the external surface of at least one of the first and second convex members. The method further comprises rotating the first and second convex members in a direction opposite one another to allow for the deposit to pass through the nip gap, thereby forming the sheet of semiconductor material.

    Abstract translation: 形成半导体材料片的方法利用了一种系统。 该系统包括沿着第一轴线延伸并且能够围绕第一轴线旋转的第一凸起构件和与第一凸起构件间隔开并且沿着第二轴线延伸并能够围绕第二轴线旋转的第二凸起构件。 第一和第二凸起构件在它们之间限定了夹持间隙。 所述方法包括将所述半导体材料的熔体施加在所述第一和第二凸起构件中的至少一个的外表面上，以在所述第一和第二凸起构件中的至少一个的外部表面上形成沉积物。 该方法还包括使第一和第二凸出部件沿彼此相反的方向旋转，以允许沉积物通过夹持间隙，由此形成半导体材料片。

    TRANSFER OF MONOLAYER GRAPHENE ONTO FLEXIBLE GLASS SUBSTRATES
    6.
    发明申请
    TRANSFER OF MONOLAYER GRAPHENE ONTO FLEXIBLE GLASS SUBSTRATES 有权
    将单层石墨转移到柔性玻璃基板上

    公开(公告)号：US20160176755A1

    公开(公告)日：2016-06-23

    申请号：US14971163

    申请日：2015-12-16

    Applicant: CORNING INCORPORATED

    Inventor： Benedict Yorke Johnson ,  Xinyuan Liu ,  Prantik Mazumder ,  Kamal Kishore Soni

    IPC: C03C15/00 ,  C03C17/00

    CPC classification number: C03C15/00 ,  C01B32/194 ,  C03C17/002 ,  C03C17/22 ,  C03C2218/31

    Abstract: Described herein are methods for improved transfer of graphene from formation substrates to target substrates. In particular, the methods described herein are useful in the transfer of high-quality chemical vapor deposition-grown monolayers of graphene from metal, e.g., copper, formation substrates to ultrathin, flexible glass targets. The improved processes provide graphene materials with less defects in the structure.

    Abstract translation: 这里描述的是用于改善石墨烯从地层衬底转移到目标衬底的方法。 特别地，本文描述的方法可用于将高质量化学气相沉积生长的石墨烯单层从金属例如铜，地层衬底转移到超薄，柔性玻璃靶。 改进的工艺为石墨烯材料提供了较少的结构缺陷。

    MECHANICAL AND CHEMICAL TEXTURIZATION OF A SILICON SHEET FOR PHOTOVOLTAIC LIGHT TRAPPING
    10.
    发明申请
    MECHANICAL AND CHEMICAL TEXTURIZATION OF A SILICON SHEET FOR PHOTOVOLTAIC LIGHT TRAPPING 审中-公开
    用于光伏照明的硅片的机械和化学文化

    公开(公告)号：US20130344641A1

    公开(公告)日：2013-12-26

    申请号：US13841109

    申请日：2013-03-15

    Applicant: CORNING INCORPORATED

    Inventor： Glen Bennett Cook ,  Kamal Kishore Soni ,  Christopher Scott Thomas ,  Lili Tian

    IPC: H01L31/18

    CPC classification number: H01L31/1824 ,  H01L31/02363 ,  H01L31/182 ,  Y02E10/546 ,  Y02P70/521

    Abstract: A process for modifying a surface of a cast polycrystalline silicon sheet to decrease the light reflectance of the cast polycrystalline sheet is disclosed. The cast polycrystalline silicon sheet has at least one structural feature resulting from the cast polycrystalline silicon sheet being directly cast to a thickness less than 1000 micrometers. The process comprises grit blasting the surface of the cast polycrystalline silicon sheet to give an abraded surface on the cast polycrystalline silicon sheet. The process further comprises chemically etching the abraded surface of the cast polycrystalline silicon sheet to give a chemically-etched, abraded surface. The light reflectance of the chemically-etched, abraded surface is decreased in comparison to the light reflectance of the surface of the cast polycrystalline silicon sheet before the step of grit blasting.

    Abstract translation: 公开了一种用于改变流延多晶硅片的表面以降低铸塑多晶片的光反射率的方法。 铸造的多晶硅片具有至少一个由铸造的多晶硅片直接铸造成小于1000微米厚度的结构特征。 该方法包括喷砂铸造多晶硅片的表面以在铸造多晶硅片上产生磨损表面。 该方法还包括化学蚀刻流延多晶硅片的磨损表面以产生化学蚀刻的磨损表面。 与喷砂步骤之前的铸造多晶硅片的表面的光反射率相比，化学蚀刻的磨损表面的光反射率降低。

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