公开(公告)号：US4360899A

公开(公告)日：1982-11-23

申请号：US121854

申请日：1980-02-15

Applicant: Magid Y. Dimyan ,  Carlos A. Castro

Inventor： Magid Y. Dimyan ,  Carlos A. Castro

IPC: G11C11/14 ,  G11C11/155

CPC classification number: G11C11/14

Abstract: In a non-volatile random access memory, a selected one of a plurality of magnetic cells arranged in an array on a major surface of a substrate is inductively switched between opposite remanent, i.e. permanent, states upon the simultaneous application of electrical pulses to a pair of conductors intersecting adjacent the selected cell, each of the electrical pulses having an amplitude less than, but the sum thereof being at least equal to, the amplitude required to inductively switch the remanent state of the selected cell.

Abstract translation: 在非易失性随机存取存储器中，在将电脉冲同时施加到一对时，在衬底的主表面上以阵列布置的多个磁细胞中的选定的一个磁性单元在相对的剩余（即永久）状态之间被感应地切换 的导体与所选择的单元相邻，每个电脉冲的振幅小于但其总和至少等于感应地切换所选择的单元的剩余状态所需的幅度。

公开(公告)号：US4290843A

公开(公告)日：1981-09-22

申请号：US122550

申请日：1980-02-19

Applicant: Ralph Korenstein ,  Carlos A. Castro

Inventor： Ralph Korenstein ,  Carlos A. Castro

IPC: C30B19/02 ,  C30B19/12 ,  H01F41/28 ,  H01F41/34 ,  B44C1/22

CPC classification number: H01F41/34 ,  C30B19/02 ,  C30B19/12 ,  C30B29/28 ,  H01F41/28

Abstract: A method for fabricating a magnetic memory film is disclosed wherein an epitaxial layer of magnetizable material is grown on the surface of a substrate which has been selectively implanted to damage portions of the crystalline surface. The resulting polycrystalline portion of the epitaxial layer grown on the damaged substrate surface is then selectively removed to leave the monocrystalline portions of the epitaxial layer.

Abstract translation: 公开了一种用于制造磁记录膜的方法，其中可选择地植入的可磁化材料的外延层生长在已经选择性地植入以损坏晶体表面部分的衬底的表面上。 然后选择性地去除在损坏的衬底表面上生长的外延层的所得多晶部分以留下外延层的单晶部分。

公开(公告)号：US4376659A

公开(公告)日：1983-03-15

申请号：US292755

申请日：1981-08-13

Applicant: Carlos A. Castro

Inventor： Carlos A. Castro

IPC: C30B1/10 ,  C30B33/00 ,  H01L31/18 ,  H01L21/42 ,  H01L21/36 ,  H01L21/423

CPC classification number: C30B33/00 ,  C30B1/10 ,  C30B29/40 ,  H01L31/1832 ,  H01L31/1844 ,  Y02E10/544 ,  Y10S148/084

Abstract: An epitaxial layer of a narrow-gap semiconductor is deposited on a substrate comprising a wider-gap semiconductor. The opposite surface of the substrate is then illuminated with light pulses at a wavelength corresponding to the desired bandgap of the resulting material. Each pulse causes localized heating where it first encounters a material having a sufficiently narrow bandgap to be an absorber at the wavelength of illumination. This localized heating will then cause interdiffusion, producing a layer of semiconductor alloy having a bandgap intermediate between the bandgaps of the two starting materials. Repetition of this step will have the effect of moving the region of localized absorption away from the original location, and toward the film/air interface. Since the desired end product composition will be transparent to the illumination applied, the process is inherently self-limiting. By appropriately selecting the wavelength of illumination applied, variously proportioned semiconductor compositions may be obtained, so that the bandgap of the resulting material may be arbitrarily selected to have any desired value between the bandgaps of the two starting materials. No surface damage is caused by this technique.

Abstract translation: 将窄间隙半导体的外延层沉积在包括较宽间隙半导体的衬底上。 然后用对应于所得材料的期望带隙的波长的光脉冲照射衬底的相对表面。 每个脉冲引起局部加热，其中首先遇到具有足够窄带隙的材料成为在照明波长处的吸收体。 这种局部加热将导致相互扩散，从而产生一层半导体合金，其中两个起始材料的带隙之间具有带隙中间。 重复这一步将具有将局部吸收区域从原始位置移动到电影/空中界面的效果。 由于所需的最终产品组合对所施加的照明是透明的，所以该过程本质上是自限制的。 通过适当选择施加的照明波长，可以获得不同比例的半导体组合物，从而可以任意选择所得材料的带隙以在两个起始材料的带隙之间具有任何期望的值。 这种技术不会造成表面损伤。

公开(公告)号：US4374678A

公开(公告)日：1983-02-22

申请号：US269292

申请日：1981-06-01

Applicant: Carlos A. Castro

Inventor： Carlos A. Castro

IPC: H01L31/10 ,  C30B1/10 ,  C30B29/48 ,  C30B33/00 ,  H01L21/208 ,  H01L21/36 ,  H01L21/363 ,  H01L21/42 ,  H01L31/18 ,  H01L21/423

CPC classification number: C30B33/00 ,  C30B1/10 ,  C30B29/48 ,  H01L31/1832 ,  H01L31/1844 ,  Y02E10/544 ,  Y10S117/904 ,  Y10S148/084

Abstract: A HgCdTe film is produced on a CdTe substrate, by depositing HgTe on a CdTe substrate, and then illuminating the substrate from the underside with infrared light at a wavelength longer than the desired operating wavelength (band-gap-equivalent wavelength) of the device. Since CdTe is transparent in the infrared, the light will reach the HgTe/CdTe interface. Since HgTe is an absorber in the infrared, most of the infrared radiation will be absorbed near the interface, which will cause intense localized heating and thus accelerate the interdiffusion of HgTe and CdTe. This interdiffusion will have the effect of moving the interface away from the original location, and toward the film/air interface. Since the desired end-product HgCdTe composition will be transparent to the infrared radiation applied, the process is inherently self-limiting. By appropriately selecting the infrared wavelength applied, variously proportioned HgCdTe compositions may be obtained, so that the effective band gap of the device can be selected at will. Moreover, no surface damage is caused by this technique.

Abstract translation: 通过在CdTe衬底上沉积HgTe，然后用比器件的期望工作波长（带隙等效波长）长的红外光从底面照射衬底，在CdTe衬底上产生HgCdTe膜。 由于CdTe在红外线中是透明的，所以光将到达HgTe / CdTe界面。 由于HgTe是红外线中的吸收剂，大部分红外辐射将被吸附在界面附近，这将导致强烈的局部加热，从而加速HgTe和CdTe的相互扩散。 这种相互扩散将具有将接口从原始位置移动到电影/空中接口的效果。 由于所需的最终产物HgCdTe组合物对于所应用的红外辐射将是透明的，因此该过程本质上是自限制的。 通过适当选择应用的红外波长，可以获得不同比例的HgCdTe组合物，从而可以随意选择器件的有效带隙。 此外，这种技术不会造成表面损伤。

公开(公告)号：US20160286953A1

公开(公告)日：2016-10-06

申请号：US15016058

申请日：2016-02-04

Applicant: Carlos A. Castro

Inventor： Carlos A. Castro

IPC: A47B23/04 ,  F16M11/10

CPC classification number: A47B23/04 ,  A47B23/042 ,  F16M11/10 ,  F16M13/00 ,  F16M13/022

Abstract: Devices for one-piece support stands for portable electronics which preferably provide multiple viewing angles.

Abstract translation: 用于一体式支撑的装置代表优选提供多个视角的便携式电子装置。

公开(公告)号：US5959299A

公开(公告)日：1999-09-28

申请号：US831101

申请日：1997-04-01

Applicant: Carlos A. Castro ,  Malcolm J. Bevan ,  Sebastian R. Borrello ,  Kent R. Carson ,  Luigi Colombo ,  Herbert F. Schaake ,  Donald F. Weirauch

Inventor： Carlos A. Castro ,  Malcolm J. Bevan ,  Sebastian R. Borrello ,  Kent R. Carson ,  Luigi Colombo ,  Herbert F. Schaake ,  Donald F. Weirauch

IPC: H01L27/146 ,  H01L31/0296

CPC classification number: H01L27/14652

Abstract: This is a sensor for, and a method of, determining if a particular type of flame is present, using at least two uncooled HgCdTe detector films on a common IR transmissive substrate. Specific examples of the types of radiation which can be identified include gasoline flames, natural gas flames, and organic combustion flames (identified, e.g., by comparing the amount of combined carbon dioxide and carbon monoxide to the amount of water vapor). The ratio of carbon dioxide to carbon monoxide can also be determined. The sensor can include a first HgCdTe filter (88) on a common IR transmissive substrate (42), a first uncooled HgCdTe detector film (86) over the first filter (88), and a second uncooled HgCdTe detector film (92) on a CdTe insulator which is either on the first uncooled HgCdTe detector film, or on a second HgCdTe filter (94) provided on the common IR transmissive substrate.

Abstract translation: 这是一种用于确定特定类型的火焰是否存在的传感器，并且使用在共同的IR透射基底上使用至少两个非冷却的HgCdTe检测膜。 可以鉴定的辐射类型的具体实例包括汽油火焰，天然气火焰和有机燃烧火焰（例如通过比较组合的二氧化碳和一氧化碳的量与水蒸气的量的比较来确定）。 也可以确定二氧化碳与一氧化碳的比例。 传感器可以包括在公共IR透射基板（42）上的第一HgCdTe滤光器（88），在第一过滤器（88）上方的第一非冷却的HgCdTe检测器膜（86）和位于第一过滤器（88）上的第二非冷却HgCdTe检测器膜 CdTe绝缘体位于第一非冷却的HgCdTe检测器膜上，或者位于公共IR透射基底上的第二HgCdTe滤光器（94）上。