摘要:
Provided is a method of forming a semiconductor package. In the method, a first package including a first chip on a first substrate is formed, a second package including a second chip on a second substrate is formed, a moulding cap provided with a via hole and a recess structure configured to receive the first chip is formed, and the second package is provided on the first package with the moulding cap being therebetween such that the recess receives the first chip. The via hole and the recess structure are simultaneously foamed.
摘要:
Provided is a method of forming a semiconductor package. In the method, a first package including a first chip on a first substrate is formed, a second package including a second chip on a second substrate is formed, a molding cap provided with a via hole and a recess structure configured to receive the first chip is formed, and the second package is provided on the first package with the molding cap being therebetween such that the recess receives the first chip. The via hole and the recess structure are simultaneously formed.
摘要:
A semiconductor package may include a substrate having first and second surfaces, the second surface including a recessed portion, a first semiconductor chip mounted on the first surface, a first ball land outside the recessed portion, a connection pad inside the recessed portion, a second chip in the recessed portion, the second semiconductor chip including a through via electrically connected to the connection pad, and a second ball land electrically connected to the through via. A semiconductor package may include a substrate having first and second surfaces, the second surface including a recessed portion, a first semiconductor chip mounted on the first surface, a first ball land outside the recessed portion, a connection pad inside the recessed portion, a second semiconductor chip in the recessed portion, the second chip including a through via electrically connected to the connection pad, and a second ball land electrically connected to the through via.
摘要:
A semiconductor package may include a substrate having first and second surfaces, the second surface including a recessed portion, a first semiconductor chip mounted on the first surface, a first ball land outside the recessed portion, a connection pad inside the recessed portion, a second chip in the recessed portion, the second semiconductor chip including a through via electrically connected to the connection pad, and a second ball land electrically connected to the through via. A semiconductor package may include a substrate having first and second surfaces, the second surface including a recessed portion, a first semiconductor chip mounted on the first surface, a first ball land outside the recessed portion, a connection pad inside the recessed portion, a second semiconductor chip in the recessed portion, the second chip including a through via electrically connected to the connection pad, and a second ball land electrically connected to the through via.
摘要:
A package-on-package (POP) electronic device may include first and second packaging substrates, a solder interconnection providing electrical and mechanical coupling between the first and second packaging substrates, and first and second sealing layers between the first and second packaging substrates. The first and second sealing layers may be respective first and second epoxy sealing layers. Moreover, the second epoxy sealing layer may include a solder flux agent, and the first epoxy sealing layer may have a lower concentration of the solder flux agent than the second epoxy sealing layer.
摘要:
A package-on-package (POP) electronic device may include first and second packaging substrates, a solder interconnection providing electrical and mechanical coupling between the first and second packaging substrates, and first and second sealing layers between the first and second packaging substrates. The first and second sealing layers may be respective first and second epoxy sealing layers. Moreover, the second epoxy sealing layer may include a solder flux agent, and the first epoxy sealing layer may have a lower concentration of the solder flux agent than the second epoxy sealing layer.