SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR THE SAME
    1.
    发明申请
    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR THE SAME 审中-公开
    半导体器件及其制造方法

    公开(公告)号:US20150270339A1

    公开(公告)日:2015-09-24

    申请号:US14644283

    申请日:2015-03-11

    Abstract: A semiconductor device has a semiconductor substrate where a plurality of elements or penetration electrodes are arranged and a trench is arranged to insulate and separate the plurality of elements or penetrating elements by surrounding the plurality of elements or penetration electrodes. The trench is arranged to penetrate both sides of the semiconductor substrate, and has an inner part where a space is arranged. Accordingly, it is possible to configure a semiconductor device having a structure to suppress insulation breakdown while simplifying a manufacturing process and improving yield of product manufacture.

    Abstract translation: 半导体器件具有其中布置有多个元件或穿透电极的半导体衬底,并且沟槽布置成通过围绕多个元件或穿透电极来绝缘和分离多个元件或穿透元件。 沟槽布置成穿过半导体衬底的两侧,并且具有布置空间的内部部分。 因此,可以构造具有抑制绝缘击穿的结构的半导体器件,同时简化制造工艺并提高产品制造的产量。

    INERTIAL SENSOR
    5.
    发明申请

    公开(公告)号:US20220316880A1

    公开(公告)日:2022-10-06

    申请号:US17703164

    申请日:2022-03-24

    Abstract: A micro vibration body includes a curved surface portion, a recessed portion recessed from the curved surface portion, a bottom surface protruding portion protruding from a bottom surface of the recessed portion, and a through hole in the bottom surface protruding portion. A mounting substrate has a positioning recess, into which the bottom surface protruding portion is inserted, and electrode portions surrounding the inner frame portion. A joining member is in the positioning recess and joins the bottom surface protruding portion with the mounting substrate. The bottom surface is in contact with a region of the mounting substrate around the positioning recess. The bottom surface protruding portion has a tip end surface that is at a distance from the positioning recess. The joining member at least partially enters the through hole and is electrically connected to the conductive layer.

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