SUBSTRATE DRYING APPARATUS, SUBSTRATE DRYING METHOD AND CONTROL PROGRAM
    2.
    发明申请
    SUBSTRATE DRYING APPARATUS, SUBSTRATE DRYING METHOD AND CONTROL PROGRAM 审中-公开
    基板干燥装置,基板干燥方法和控制程序

    公开(公告)号:US20140259728A1

    公开(公告)日:2014-09-18

    申请号:US14287616

    申请日:2014-05-27

    CPC classification number: H01L21/02054 H01L21/02074 H01L21/67034

    Abstract: A substrate drying apparatus includes a drying gas nozzle configured so that, assuming that a surface WA of the substrate W is a projection plane, regarding the drying gas flow Gf in the nozzle moving direction Dr, a collision position Gfw with the substrate W is located downstream of a projected discharge position Gfv′, the projected discharge position Gfv′ being a discharge position from the drying gas nozzle projected on the projection plane. In a three-dimensional space, the drying gas flow Gf is inclined, such that an angle α formed by an axis Ga of the drying gas flow Gf and a vertical line Wp of the substrate W is in a range from a half contact angle θ/2 to an angle determined by deducting the half contact angle θ/2 from 90°, the half contact angle θ/2 being a half of the contact angle θ.

    Abstract translation: 基板干燥装置包括干燥气体喷嘴,其构成为,假设基板W的表面WA为投影面,关于喷嘴移动方向Dr的干燥气体流量Gf,与基板W的碰撞位置Gfw位于 在喷出位置Gfv'的下游,喷出位置Gfv'是从投影在投影面上的干燥气体喷嘴的排出位置。 在三维空间中,干燥气体流Gf倾斜,使得由干燥气体流Gf的轴线Ga和基板W的垂直线Wp形成的角度α在半接触角度 ; / 2通过减去半接触角和角度确定的角度; / 2从90°,半接触角和角度; / 2是接触角的一半。

    SUBSTRATE DRYING APPARATUS, SUBSTRATE DRYING METHOD AND CONTROL PROGRAM
    4.
    发明申请
    SUBSTRATE DRYING APPARATUS, SUBSTRATE DRYING METHOD AND CONTROL PROGRAM 有权
    基板干燥装置,基板干燥方法和控制程序

    公开(公告)号:US20130219740A1

    公开(公告)日:2013-08-29

    申请号:US13860787

    申请日:2013-04-11

    CPC classification number: H01L21/02054 H01L21/02074 H01L21/67034

    Abstract: A substrate drying apparatus includes a drying gas nozzle configured so that, assuming that a surface WA of the substrate W is a projection plane, regarding the drying gas flow Gf in the nozzle moving direction Dr, a collision position Gfw with the substrate W is located downstream of a projected discharge position Gfv′, the projected discharge position Gfv′ being a discharge position from the drying gas nozzle projected on the projection plane. In a three-dimensional space, the drying gas flow Gf is inclined, such that an angle α formed by an axis Ga of the drying gas flow Gf and a vertical line Wp of the substrate W is in a range from a half contact angle θ/2 to an angle determined by deducting the half contact angle θ/2 from 90°, the half contact angle θ/2 being a half of the contact angle θ.

    Abstract translation: 基板干燥装置包括干燥气体喷嘴,其构成为,假设基板W的表面WA为投影面,关于喷嘴移动方向Dr的干燥气体流量Gf,与基板W的碰撞位置Gfw位于 在喷出位置Gfv'的下游,喷出位置Gfv'是从投影在投影面上的干燥气体喷嘴的排出位置。 在三维空间中,干燥气体流Gf倾斜,使得由干燥气体流Gf的轴线Ga和基板W的垂直线Wp形成的角度α在半接触角θ / 2相对于从90°减去半接触角θ/ 2确定的角度,半接触角θ/ 2是接触角θ的一半。

Patent Agency Ranking