Abstract:
The present invention relates to a substrate holding apparatus used to polish a surface of the substrate by pressing the substrate against a polishing tool, such as a polishing pad. Further, the present invention relates to a method of manufacturing a drive ring used for the substrate holding apparatus. A substrate holding apparatus (1) includes a polishing head body (10), a drive ring (81) disposed below the polishing head body (10), and a retainer ring (40) fixed to the drive ring (81). The drive ring (81) has an annular contact surface (81a) that contacts the retainer ring (40). A flatness in the circumferential direction of the contact surface (81a) is 4.6 μm or less. The flatness represents a difference in a height between the highest position and the lowest position of the contact surface (81a).
Abstract:
A polishing apparatus capable of preventing wear of rollers which are to transmit a load to a retainer ring and capable of preventing wear particles from escaping outside is disclosed. The polishing apparatus includes: a retainer ring disposed so as to surround the substrate and configured to press the polishing surface while rotating together with a head body; a rotary ring secured to the retainer ring and configured to rotate together with the retainer ring; a stationary ring disposed on the rotary ring; and a local-load exerting device configured to apply a local load to a part of the retainer ring through the rotary ring and the stationary ring. The rotary ring has rollers which are in contact with the stationary ring.
Abstract:
An elastic membrane capable of precisely controlling a polishing profile in a narrow area of a wafer edge portion is disclosed. The elastic membrane includes a contact portion to be brought into contact with a substrate; a first edge circumferential wall extending upwardly from a peripheral edge of the contact portion; and a second edge circumferential wall having a horizontal portion connected to an inner circumferential surface of the first edge circumferential wall. The inner circumferential surface of the first edge circumferential wall includes an upper inner circumferential surface and a lower inner circumferential surface, both of which are perpendicular to the contact portion, The upper inner circumferential surface extends upwardly from the horizontal portion of the second edge circumferential wall, and the lower inner circumferential surface extends downwardly from the horizontal portion.
Abstract:
A substrate holding apparatus and a polishing apparatus which can reduce vibrations of a top ring in its entirety by damping vibrations transmitted from a retaining ring to a top ring body is disclosed. The substrate holding apparatus includes a top ring body having a substrate holding surface configured to hold and press a substrate against a polishing surface, a retaining ring configured to surround the substrate and to contact the polishing surface, and a drive ring comprising a ring member configured to hold the retaining ring on a lower surface thereof, a central member disposed at a central part of the top ring body and supported by the top ring body, and a connecting portion configured to connect the ring member and the central member. The drive ring includes a first material and a second material having a modulus of longitudinal elasticity smaller than the first material.
Abstract:
A polishing method and a polishing apparatus that can suppress fluid from remaining on an upper surface of a workpiece, and that can apply an appropriate force to the workpiece to polish the workpiece are disclosed. The polishing method includes: pressurizing a first pressure chamber to move fluid present between an upper surface of the workpiece and the first pressure chamber outward; moving the fluid present between the upper surface of the workpiece and a second pressure chamber outward by pressurizing the second pressure chamber to form a second pressure in the second pressure chamber which is lower than a target pressure when a pressure equal to or higher than the target pressure is formed in the first pressure chamber; and polishing the workpiece after causing the fluid to flow out from the workpiece.
Abstract:
A method includes: vacuuming at least one area among a plurality of areas formed concentrically between a top face of the elastic film and the top ring body under a state where a bottom face of the substrate is supported by a support member and a top face of the substrate contacts a bottom face of the elastic film; measuring a flow volume of gas in an area located outside one or more areas to be vacuumed; determining whether the substrate is adsorbed to the top ring based on the flow volume of the gas; and after it is determined that the substrate is adsorbed to the top ring, separating the elastic film to which the substrate is adsorbed from the support member.
Abstract:
An apparatus for processing a substrate is disclosed. The apparatus includes a polishing section configured to polish a substrate, a transfer mechanism configured to transfer the substrate, and a cleaning section configured to clean and dry the polished substrate. The cleaning section has plural cleaning lines for cleaning plural substrates. The plural cleaning lines have plural cleaning modules and plural transfer robots for transferring the substrates.
Abstract:
An elastic membrane is used in a substrate holding apparatus for holding a substrate such as a semiconductor wafer and pressing the substrate against a polishing surface. The elastic membrane includes a plurality of concentrically circumferential walls configured to define a plurality of pressurizing areas for pressing the substrate. The pressurizing areas includes a central pressurizing area located at a central part of the elastic membrane, an annular edge pressurizing area located at the outermost part of the elastic membrane, and a plurality of intermediate pressurizing areas located between the central pressurizing area and the annular edge pressurizing area. The area width of at least one of the intermediate pressurizing areas is set in a range to allow a polishing rate responsive width not to vary even when the area width is varied.
Abstract:
A polishing apparatus polishes a substrate by bringing the substrate into sliding contact with a polishing surface. The polishing apparatus includes: a substrate holder having a substrate holding surface configured to press the substrate against the polishing surface, a retaining ring coupled to the substrate holding surface and configured to surround the substrate, wherein the retaining ring is brought into contact with the polishing surface during operation of the polishing apparatus, the retaining ring being configured to be tiltable independently of the substrate holding surface; a rotating mechanism configured to rotate the substrate holder about its own axis; and at least one local load exerting mechanism configured to exert a local load on a part of the retaining ring in a direction perpendicular to the polishing surface, the at least one local load exerting mechanism being arranged so as not to move in accordance with the substrate holder.
Abstract:
A polishing method for a wafer using a polishing head having a plurality of pressure chambers formed by an elastic membrane is disclosed. The polishing method includes: forming a positive pressure in a first pressure chamber and forming a negative pressure in a second chamber to move fluid present between an upper surface of the wafer and the first pressure chamber outward; then forming a positive pressure in the second chamber and forming a negative pressure in a third pressure chamber to move the fluid present between the upper surface of the wafer and the second pressure chamber outward; then forming a positive pressure in outermost pressure chamber of the plurality of pressure chambers to move the fluid present between the upper surface of the wafer and the outermost pressure chamber outward to thereby cause the fluid to flow out from the upper surface of the wafer; and then pressing a lower surface of the wafer against a polishing surface with the elastic membrane to polish the lower surface of the wafer.