公开(公告)号：US10340150B2

公开(公告)日：2019-07-02

申请号：US15103593

申请日：2014-12-16

Applicant: Entegris, Inc. ,  ATMI TAIWAN CO., LTD.

Inventor： Steven Bilodeau ,  Jeffrey A. Barnes ,  Emanuel Cooper ,  Hsing-Chen Wu ,  Sheng-Hung Tu ,  Thomas Parson ,  Min-chieh Yang

IPC: H01L21/3213 ,  C09K13/00 ,  H01L21/3205 ,  H01L29/16 ,  H01L29/26 ,  H01L29/45 ,  C09G1/04 ,  H01L21/24

Abstract: Compositions and methods for selectively removing unreacted metal material (e.g., unreacted nickel) relative to metal germanide (e.g., NiGe), metal-III-V materials, and germanium from microelectronic devices having same thereon. The compositions are substantially compatible with other materials present on the microelectronic device such as low-k dielectrics and silicon nitride.

公开(公告)号：US20190074188A1

公开(公告)日：2019-03-07

申请号：US16122940

申请日：2018-09-06

Applicant: Entegris, Inc.

Inventor： Emanuel Cooper ,  Steven Bilodeau ,  Wen-Haw Dai ,  Min-Chieh Yang ,  Sheng-Hung Tu ,  Hsing-Chen Wu ,  Sean Kim ,  SeongJin Hong

IPC: H01L21/311 ,  C09K13/08

Abstract: Described are compositions and methods useful for wet-etching a microelectronic device substrate that includes silicon nitride; the compositions including phosphoric acid, hexafluorosilicic acid, and an amino alkoxy silane, and optionally one or more additional optional ingredients; a wet etching method of a substrate that includes silicon nitride and silicon oxide, that uses a composition as described, can achieve useful or improved silicon nitride etch rate, useful or improved silicon nitride selectivity, a combination of these, and optionally a reduction in particles present at a substrate surface after etching.

公开(公告)号：US11781066B2

公开(公告)日：2023-10-10

申请号：US17747731

申请日：2022-05-18

Applicant: ENTEGRIS, INC.

Inventor： YoungMin Kim ,  Michael White ,  Daniela White ,  Emanuel Cooper ,  Steven M. Bilodeau

IPC: C09K13/06 ,  H01L21/311 ,  H01J37/32

CPC classification number: C09K13/06 ,  H01J37/32724 ,  H01J37/32917 ,  H01L21/31111

Abstract: The invention provides a composition and method for improving the selectivity of nitride etching versus oxide etching and can be used with conventional phosphoric acid wet etch compositions. The invention describes additives that serve to inhibit silicon, oxides, and related compounds regrowth (i.e., redeposition) on the silicon oxide surface. In certain embodiments, the invention provides certain amino-substituted aryl compounds which are bound to a tri-alkoxy silane.

公开(公告)号：US10651045B2

公开(公告)日：2020-05-12

申请号：US16122940

申请日：2018-09-06

Applicant: Entegris, Inc.

Inventor： Emanuel Cooper ,  Steven Bilodeau ,  Wen-Haw Dai ,  Min-Chieh Yang ,  Sheng-Hung Tu ,  Hsing-Chen Wu ,  Sean Kim ,  SeongJin Hong

IPC: H01L21/311 ,  C09K13/08 ,  H01L21/02 ,  H01L21/67 ,  H01L21/306 ,  C30B33/10

Abstract: Described are compositions and methods useful for wet-etching a microelectronic device substrate that includes silicon nitride; the compositions including phosphoric acid, hexafluorosilicic acid, and an amino alkoxy silane, and optionally one or more additional optional ingredients; a wet etching method of a substrate that includes silicon nitride and silicon oxide, that uses a composition as described, can achieve useful or improved silicon nitride etch rate, useful or improved silicon nitride selectivity, a combination of these, and optionally a reduction in particles present at a substrate surface after etching.