公开(公告)号：US20220208553A1

公开(公告)日：2022-06-30

申请号：US17559906

申请日：2021-12-22

Applicant: ENTEGRIS, INC.

Inventor： SeungHyun Chae ,  SeongJin Hong ,  Eric Hong ,  Juhee Yeo ,  WonLae Kim ,  JeongYeol Yang

IPC: H01L21/3105 ,  C23F1/30 ,  C23F1/44 ,  C23F11/04

Abstract: Compositions useful for the selective etching, i.e., removal, of metal oxide hard masks such as zirconium oxide and hafnium oxide, often used as hard masks in microelectronic devices, in the presence of other materials such as polysilicon, silicon dioxide, silicon nitride, and tungsten are provided.

公开(公告)号：US20220389314A1

公开(公告)日：2022-12-08

申请号：US17749868

申请日：2022-05-20

Applicant: ENTEGRIS, INC.

Inventor： Steven M. Bilodeau ,  Claudia Yevenes ,  Juhee Yeo

IPC: C09K13/06 ,  H01L21/306

Abstract: The invention relates to compositions and methods for the selective wet etching of a surface of a microelectronic device that contains both silicon nitride (SiN) and polysilicon. An etching composition as described comprises phosphoric acid, certain polysilicon corrosion inhibitors, along with certain silanes. The combination of the two components was found to greatly improve the selectivity of the silicon nitride etching composition in the presence of polysilicon.

公开(公告)号：US20240309272A1

公开(公告)日：2024-09-19

申请号：US18607272

申请日：2024-03-15

Applicant: ENTEGRIS, INC.

Inventor： Juhee Yeo ,  SeongJin Hong ,  WonLae Kim ,  Younghun Park ,  Yeonhui Kang ,  Jinwook Jeong

IPC: C09K13/06

CPC classification number: C09K13/06

Abstract: Compositions and methods for selectively etching silicon nitride relative to polysilicon, silicon oxide materials and/or silicide materials from a microelectronic device.

公开(公告)号：US12272560B2

公开(公告)日：2025-04-08

申请号：US17559906

申请日：2021-12-22

Applicant: ENTEGRIS, INC.

Inventor： SeungHyun Chae ,  SeongJin Hong ,  Eric Hong ,  Juhee Yeo ,  WonLae Kim ,  JeongYeol Yang

IPC: H01L21/31 ,  C23F1/30 ,  C23F1/44 ,  C23F11/04 ,  H01L21/3105

Abstract: Compositions useful for the selective etching, i.e., removal, of metal oxide hard masks such as zirconium oxide and hafnium oxide, often used as hard masks in microelectronic devices, in the presence of other materials such as polysilicon, silicon dioxide, silicon nitride, and tungsten are provided.

公开(公告)号：US12012540B2

公开(公告)日：2024-06-18

申请号：US17749868

申请日：2022-05-20

Applicant: ENTEGRIS, INC.

Inventor： Steven M. Bilodeau ,  Claudia Yevenes ,  Juhee Yeo

IPC: C09K13/06 ,  B81C1/00 ,  C09K13/04 ,  H01L21/306 ,  H01L21/311 ,  H01L21/3213

CPC classification number: C09K13/06 ,  B81C1/00539 ,  C09K13/04 ,  H01L21/30604 ,  H01L21/311 ,  H01L21/32134

Abstract: The invention relates to compositions and methods for the selective wet etching of a surface of a microelectronic device that contains both silicon nitride (SiN) and polysilicon. An etching composition as described comprises phosphoric acid, certain polysilicon corrosion inhibitors, along with certain silanes. The combination of the two components was found to greatly improve the selectivity of the silicon nitride etching composition in the presence of polysilicon.

公开(公告)号：US20230383185A1

公开(公告)日：2023-11-30

申请号：US18202007

申请日：2023-05-25

Applicant: ENTEGRIS, INC.

Inventor： JeongYeol Yang ,  Hyungpyo Hong ,  Juhee Yeo ,  SeongJin Hong ,  WonLae Kim

IPC: C09K13/08 ,  C09K15/20

CPC classification number: C09K13/08 ,  C09K15/20

Abstract: Compositions and methods for selectively etching titanium nitride, cobalt, or a combination thereof. The compositions and methods generally leave molybdenum and other materials present unaffected by the process. The process can achieve a high etching rate, and can provide uniform recess top and bottom layers in patterns.

公开(公告)号：US20230030323A1

公开(公告)日：2023-02-02

申请号：US17949956

申请日：2022-09-21

Applicant: ENTEGRIS, INC.

Inventor： Atanu K. Das ,  Daniela White ,  Emanuel I. Cooper ,  Eric Hong ,  JeongYeol Yang ,  Juhee Yeo ,  Michael L. White ,  SeongJin Hong ,  SeungHyun Chae ,  Steven A. Lippy ,  WonLae Kim

IPC: C23F1/38 ,  H01L21/3213

Abstract: An etchant composition and method for etching molybdenum from a microelectronic device at an etch rate are described. A microelectronic device is contacted with an etchant composition for a time sufficient to at least partially remove the molybdenum. The etchant composition comprises at least one oxidizing agent, at least one oxidizing agent stabilizer, and at least one base and has a pH of from 7.5 to 13. The etchant composition selectively removes molybdenum at an etch rate of 5-200 Å/min.

公开(公告)号：US11492709B2

公开(公告)日：2022-11-08

申请号：US17230633

申请日：2021-04-14

Applicant: ENTEGRIS, INC.

Inventor： Atanu K. Das ,  Daniela White ,  Emanuel I. Cooper ,  Eric Hong ,  JeongYeol Yang ,  Juhee Yeo ,  Michael L. White ,  SeongJin Hong ,  SeungHyun Chae ,  Steven A. Lippy ,  WonLae Kim

IPC: C23F1/38 ,  H01L21/3213

Abstract: An etchant composition and method for etching molybdenum from a microelectronic device at an etch rate are described. A microelectronic device is contacted with an etchant composition for a time sufficient to at least partially remove the molybdenum. The etchant composition comprises at least one oxidizing agent, at least one oxidizing agent stabilizer, and at least one base and has a pH of from 7.5 to 13. The etchant composition selectively removes molybdenum at an etch rate of 5-200 Å/min.