公开(公告)号：US20210284866A1

公开(公告)日：2021-09-16

申请号：US17136557

申请日：2020-12-29

Applicant: FUJIFILM Corporation

Inventor： Yuta FUKUSHIMA ,  Akio TAMURA ,  Tetsu KITAMURA

IPC: C09D183/06 ,  G02B1/14

Abstract: A hardcoat film has a substrate, a hardcoat layer, and an anti-scratch layer in this order. The anti-scratch layer contains a cured product of polyorganosilsesquioxane (c1) having a group containing a radically polymerizable double bond.

公开(公告)号：US20170288151A1

公开(公告)日：2017-10-05

申请号：US15622076

申请日：2017-06-14

Applicant: FUJIFILM CORPORATION

Inventor： Yuta SHIGENOI ,  Tetsu KITAMURA

IPC: H01L51/00 ,  C09D11/033 ,  C09D11/52 ,  C09D11/102 ,  C09D11/36

CPC classification number: H01L51/0074 ,  C09D11/033 ,  C09D11/102 ,  C09D11/36 ,  C09D11/52 ,  H01L29/786 ,  H01L51/0004 ,  H01L51/0005 ,  H01L51/0007 ,  H01L51/004 ,  H01L51/0068 ,  H01L51/0094 ,  H01L51/0558 ,  H01L51/0575

Abstract: A composition for forming an organic semiconductor film includes an organic semiconductor represented by the following Formula A-1, and a solvent having a boiling point of from 150° C. to 300° C. and an SP value of from 15.0 to 18.0.

公开(公告)号：US20170229655A1

公开(公告)日：2017-08-10

申请号：US15497223

申请日：2017-04-26

Applicant: FUJIFILM CORPORATION

Inventor： Tetsu KITAMURA

IPC: H01L51/00 ,  C08G61/12

CPC classification number: H01L51/0036 ,  C08G61/12 ,  C08G61/123 ,  C08G61/125 ,  C08G61/126 ,  C08G2261/124 ,  C08G2261/141 ,  C08G2261/1412 ,  C08G2261/1426 ,  C08G2261/1428 ,  C08G2261/1452 ,  C08G2261/146 ,  C08G2261/148 ,  C08G2261/18 ,  C08G2261/228 ,  C08G2261/312 ,  C08G2261/314 ,  C08G2261/3221 ,  C08G2261/3223 ,  C08G2261/3225 ,  C08G2261/3241 ,  C08G2261/3242 ,  C08G2261/3243 ,  C08G2261/3244 ,  C08G2261/334 ,  C08G2261/344 ,  C08G2261/414 ,  C08G2261/92 ,  C08L2205/02 ,  H01L29/786 ,  H01L51/0003 ,  H01L51/0035 ,  H01L51/0043 ,  H01L51/05 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/0558 ,  C09D165/00 ,  C08L65/00 ,  C08L25/16

Abstract: An object of the invention is to provide an organic semiconductor element having high mobility and excellent temporal stability under high humidity, and a manufacturing method thereof. Another object is to provide a novel compound suitable for an organic semiconductor. Still another object is to provide an organic semiconductor film having high mobility and excellent temporal stability under high humidity and a composition for forming an organic semiconductor film that can suitably form the organic semiconductor film.The organic semiconductor element according to the invention includes an organic semiconductor layer containing an organic semiconductor having a repeating unit represented by Formula 1.

公开(公告)号：US20170226279A1

公开(公告)日：2017-08-10

申请号：US15497226

申请日：2017-04-26

Applicant: FUJIFILM CORPORATION

Inventor： Tetsu KITAMURA

IPC: C08G61/12 ,  C08L101/00 ,  C08L65/00 ,  H01L29/786 ,  H01L51/05

CPC classification number: C08G61/122 ,  C08G61/12 ,  C08G61/123 ,  C08G61/124 ,  C08G61/126 ,  C08G2261/124 ,  C08G2261/1412 ,  C08G2261/1428 ,  C08G2261/18 ,  C08G2261/312 ,  C08G2261/3223 ,  C08G2261/3225 ,  C08G2261/3243 ,  C08G2261/3244 ,  C08G2261/3327 ,  C08G2261/334 ,  C08G2261/344 ,  C08G2261/364 ,  C08G2261/414 ,  C08G2261/51 ,  C08G2261/92 ,  C08L65/00 ,  C08L101/00 ,  H01L29/786 ,  H01L51/05 ,  H01L51/052 ,  H01L51/0529 ,  C08L25/16

Abstract: Objects of the present invention is to provide an organic semiconductor element having high mobility and excellent temporal stability under high humidity, and a manufacturing method thereof, to provide a novel compound which is suitable as an organic semiconductor, and to provide an organic semiconductor film having high mobility and excellent temporal stability under high humidity and a manufacturing method thereof, and a composition for forming an organic semiconductor film that can suitably form the organic semiconductor film.The organic semiconductor element according to the present invention has an organic semiconductor layer containing a compound having a constitutional repeating unit represented by Formula 1.

公开(公告)号：US20150221876A1

公开(公告)日：2015-08-06

申请号：US14685902

申请日：2015-04-14

Applicant: FUJIFILM Corporation

Inventor： Tetsu KITAMURA ,  Koji TAKAKU ,  Wataru SOTOYAMA

IPC: H01L51/00 ,  C07F7/08 ,  C07D493/04

CPC classification number: H01L51/0073 ,  C07D493/04 ,  C07F7/0838 ,  C09B57/00 ,  H01L51/0061 ,  H01L51/0068 ,  H01L51/0071 ,  H01L51/0072 ,  H01L51/0094 ,  H01L51/0558

Abstract: An organic thin film transistor containing a compound represented by the formula (1) in a semiconductor active layer has a high carrier mobility and a small fluctuation of the threshold voltage after repeated driving. R1 to R10 represent a hydrogen atom or a substituent, provided that at least one of R1 to R10 represents a substituent represented by the formula (W), or the aromatic hydrocarbon ring formed with any adjacent two of R1 to R10 has a substituent represented by the formula (W). * represents a position bonded to the benzobisbenzofuran skeleton, L represents a single bond or a divalent linking group, and R represents a substituted or unsubstituted acyclic alkyl group having 2 or more carbon atoms, an oligoethyleneoxy group having a repeating number of an ethyleneoxy unit of 2 or more, or an oligosiloxane group having 2 or more silicon atoms.

Abstract translation: 在半导体有源层中含有式（1）表示的化合物的有机薄膜晶体管在反复驱动后具有高的载流子迁移率和阈值电压的小的波动。 R 1〜R 10表示氢原子或取代基，条件是R 1〜R 10中的至少一个表示由式（W）表示的取代基，或者与R 1〜R 10中任意相邻的2个所形成的芳香族烃环具有由 公式（W）。 *表示与苯并二苯并呋喃骨架结合的位置，L表示单键或二价连接基团，R表示取代或未取代的碳原子数2以上的无环烷基，具有重复数量的乙烯氧基单元的低聚亚乙基氧基 2个以上，或者具有2个以上硅原子的低聚硅氧烷基。

公开(公告)号：US20150166560A1

公开(公告)日：2015-06-18

申请号：US14632669

申请日：2015-02-26

Applicant: FUJIFILM Corporation

Inventor： Tetsu KITAMURA ,  Koji TAKAKU ,  Wataru SOTOYAMA

IPC: C07D493/04 ,  H01L51/00 ,  H01L51/05

CPC classification number: C07D493/04 ,  C09B57/00 ,  C09B69/008 ,  H01L51/0073 ,  H01L51/0545 ,  H01L51/0558 ,  H01L51/42 ,  Y02E10/549

Abstract: An organic thin film transistor having a semiconductor active layer containing a compound represented by the formula (1) has a high carrier mobility and a small change in the threshold voltage after repeated operation. R1 to R10 represent H or a substituent, provided that any two adjacent members among R1 to R4 and R6 to R9 are bonded to each other to form a substituted or unsubstituted benzene ring.

Abstract translation: 具有含有式（1）表示的化合物的半导体活性层的有机薄膜晶体管在重复操作之后具有高载流子迁移率和阈值电压的小变化。 R 1至R 10表示H或取代基，条件是R 1至R 4和R 6至R 9中的任何两个相邻的成员彼此键合以形成取代或未取代的苯环。

公开(公告)号：US20140054577A1

公开(公告)日：2014-02-27

申请号：US14070601

申请日：2013-11-04

Applicant: FUJIFILM Corporation

Inventor： Tetsuro MITSUI ,  Tetsu KITAMURA ,  Kimiatsu NOMURA ,  Toru HARADA

IPC: H01L51/00 ,  H01L27/30

CPC classification number: H01L51/0072 ,  C09B23/0066 ,  C09B57/007 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14645 ,  H01L27/14687 ,  H01L27/14689 ,  H01L27/307 ,  H01L51/0062 ,  H01L51/0078 ,  H01L51/4206 ,  H01L51/4213 ,  H01L51/447 ,  H01L2251/308 ,  Y02E10/549

Abstract: A photoelectric conversion element comprises a first photoelectric conversion part, the first photoelectric conversion part comprising: a pair of electrodes; and a photoelectric conversion film between the pair of electrodes, wherein the photoelectric conversion film comprises an organic photoelectric conversion material having an absorption peak in an infrared region of an absorption spectrum within a combined range of a visible region and the infrared region and generating an electric charge according to light absorbed, and the first photoelectric conversion part as a whole transmits 50% or more of light in the visible region.

Abstract translation: 光电转换元件包括第一光电转换部分，第一光电转换部分包括：一对电极; 以及所述一对电极之间的光电转换膜，其中所述光电转换膜包括在可见光区域和所述红外区域的组合范围内的吸收光谱的红外区域中具有吸收峰的有机光电转换材料， 根据光吸收的电荷，第一光电转换部整体在可见光区域透过50％以上的光。

公开(公告)号：US20220056228A1

公开(公告)日：2022-02-24

申请号：US17521025

申请日：2021-11-08

Applicant: FUJIFILM Corporation

Inventor： Nobuyuki AKUTAGAWA ,  Ayako MATSUMOTO ,  Yuta FUKUSHIMA ,  Akio TAMURA ,  Tetsu KITAMURA ,  Yuzo NAGATA

IPC: C08J7/04 ,  C09D183/06 ,  C09D183/08 ,  G02B1/14

Abstract: A hardcoat film includes: a substrate; and a hardcoat layer, in which the hardcoat film satisfies the following Formulas (i) and (ii), (i) E′(0.4)HC×dHC≥8,000 MPa·μm, (ii) E′(4)HC×dHC≤4,000 MPa·μm, E′(0.4)HC is an elastic modulus of the hardcoat layer obtained in a case where an elongation rate is 0.4%, E′(4)HC is an elastic modulus of the hardcoat layer obtained in a case where an elongation rate is 4%, and dHC is a film thickness of the hardcoat layer.

公开(公告)号：US20180339275A1

公开(公告)日：2018-11-29

申请号：US16045771

申请日：2018-07-26

Applicant: FUJIFILM Corporation

Inventor： Tetsu KITAMURA ,  Sotaro INOMATA ,  Masatoshi YUMOTO ,  Motoi HARADA

IPC: B01D71/64 ,  B01D53/22 ,  B01D69/10 ,  B01D69/12 ,  C08G73/10 ,  C07C7/144

Abstract: A gas separation membrane includes a gas separation layer containing a polyimide compound and the polyimide compound has a repeating unit represented by Formula (I). In Formula (I), Rf1, Rf4, Rf5, and Rf8 each independently represent an alkyl group. Rf2, Rf3, Rf6, Rf7, and Rf9 to Rf16 each independently represent a hydrogen atom or a substituent, and at least one of Rf2, Rf3, Rf6, Rf7, and Rf9, . . . , or Rf16 represents a specific polar group. A represents a single bond or a divalent linking group having a specific structure. R represents a mother nucleus having a specific structure.

公开(公告)号：US20180226589A1

公开(公告)日：2018-08-09

申请号：US15943968

申请日：2018-04-03

Applicant: FUJIFILM Corporation ,  The University of Tokyo

Inventor： Hiroaki TSUYAMA ,  Kimiatsu NOMURA ,  Yoshihisa USAMI ,  Masatoshi YUMOTO ,  Tetsu KITAMURA ,  Masashi KOYANAGI ,  Tetsuya WATANABE ,  Toshihiro OKAMOTO ,  Junichi TAKEYA

IPC: H01L51/00 ,  C09D5/24 ,  C07D495/14 ,  C09B57/00 ,  H01L51/05

CPC classification number: H01L51/0074 ,  C07D495/14 ,  C09B57/00 ,  C09D5/24 ,  H01L51/0007 ,  H01L51/0558 ,  Y02E10/549 ,  Y02P70/521

Abstract: Provided are a coating solution for a non-light-emitting organic semiconductor device having high carrier mobility that contains a compound represented by Formula (2) and a solvent having a boiling point of equal to or higher than 100° C., an organic transistor, a compound, an organic semiconductor material for a non-light-emitting organic semiconductor device, a material for an organic transistor, a method for manufacturing an organic transistor, and a method for manufacturing an organic semiconductor film. (In Formula (2), R11 and R12 each independently represent a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, or an alkoxy group and may have a substituent, and an aromatic portion in Formula (2) may be substituted with a halogen atom.)