公开(公告)号：US20240117218A1

公开(公告)日：2024-04-11

申请号：US18275285

申请日：2022-02-02

Applicant: FUJIMI INCORPORATED

Inventor： Yuichiro NAKAGAI ,  Hiroyuki ODA ,  Yasuki ITO ,  Shogaku IDE ,  Shinichiro TAKAMI

IPC: C09G1/02

CPC classification number: C09G1/02

Abstract: Provided are a polishing method and a polishing composition that are applied to polishing of silicon carbide and allows reduction of rise in pH of the polishing composition and increase in pad temperature during polishing. Provided is a method of polishing an object to be polished having a surface formed of silicon carbide. The method includes steps of preparing a polishing composition, and supplying the polishing composition to the object to be polished and polishing the object to be polished. The polishing composition contains permanganate, a metal salt A, and water. The metal salt A is a salt of a metal cation having a pKa of less than 7.0 in form of a hydrated metal ion, and an anion.

公开(公告)号：US20240110080A1

公开(公告)日：2024-04-04

申请号：US18529763

申请日：2023-12-05

Applicant: FUJIMI INCORPORATED

Inventor： Yuichiro NAKAGAI ,  Yasuaki ITO ,  Hiroyuki ODA ,  Shogaku IDE ,  Shinichiro TAKAMI

IPC: C09G1/02

CPC classification number: C09G1/02

Abstract: Provided is a polishing composition containing an abrasive, permanganate, an aluminum salt, and water. In the polishing composition, a relation of a content W1 [% by weight] of the abrasive, a concentration C1 [mM] of the permanganate, and a concentration C2 [mM] of the aluminum salt satisfies at least one condition of the following conditions [A], [B], and [C]:


satisfying both of 500≤(C1/W1) and 0.04≤(C2/C1);  [A]



satisfying both of 200≤(C1/√(W1)) and 8≤C2; and  [B]



satisfying both of 500≤(C1/W1) and 8≤C2.  [C]

公开(公告)号：US20240101867A1

公开(公告)日：2024-03-28

申请号：US18529465

申请日：2023-12-05

Applicant: FUJIMI INCORPORATED

Inventor： Yuichiro NAKAGAI ,  Hiroyuki ODA ,  Yasuaki ITO ,  Shogaku IDE ,  Shinichiro TAKAMI

IPC: C09G1/02

CPC classification number: C09G1/02

Abstract: Provided are a polishing method and a polishing composition that are applied to polishing of silicon carbide and allows reduction of rise in pH of the polishing composition and increase in pad temperature during polishing Provided is a method of polishing an object to be polished having a surface formed of silicon carbide. The method includes steps of preparing a polishing composition, and supplying the polishing composition to the object to be polished and polishing the object to be polished. The polishing composition contains permanganate, a metal salt A, and water. The metal salt A is a salt of a metal cation having a pKa of less than 7.0 in form of a hydrated metal ion, and an anion.

公开(公告)号：US20160189973A1

公开(公告)日：2016-06-30

申请号：US14910803

申请日：2014-06-12

Applicant: FUJIMI INCORPORATED

Inventor： Makoto TABATA ,  Shinichiro TAKAMI ,  Shogaku IDE

IPC: H01L21/306 ,  C09G1/02

CPC classification number: H01L21/30625 ,  B24B37/28 ,  C09G1/02 ,  C09K3/1409 ,  C09K3/1436 ,  C09K3/1463 ,  H01L21/02024

Abstract: [Problem] To provide a method for producing a polished object, which can remarkably reduce a haze level on a surface of the object to be polished while defects are significantly reduced.[Solution] A method for producing a polished object, which includes a double-side polishing step in which an object to be polished is subjected to double-side polishing using a double-side polishing composition including first abrasive grains having an average primary particle diameter of 40 nm or more and a nitrogen-containing water-soluble polymer to obtain a double-side polished object; and a single-side polishing step in which the double-side polished object is subjected to single-side polishing using a single-side polishing composition including second abrasive grains having an average primary particle diameter of 40 nm or less and a water-soluble polymer, and in which a ratio of an average primary particle diameter (A) of the first abrasive grains with respect to an average primary particle diameter (B) of the second abrasive grains (A)/(B) is more than 1 and 2.5 or less.

Abstract translation: 本发明提供一种抛光对象的制造方法，其能够显着地降低被抛光体的表面上的雾度，同时缺陷明显减少。 [解决方案]一种抛光对象的制造方法，其包括双面研磨工序，其中使用双面抛光组合物进行双面抛光，其中使用双面抛光组合物，所述双面抛光组合物包括具有平均初级粒径 为40nm以上，含氮水溶性聚合物为双面抛光对象物; 以及使用单平面抛光组合物对双面抛光对象进行单面抛光的单面抛光步骤，该单面抛光组合物包括平均一次粒径为40nm以下的第二磨料颗粒和水溶性聚合物 ，其中第一磨粒的平均一次粒径（A）相对于第二磨粒（A）/（B）的平均一次粒径（B）的比例大于1和2.5或 减。

公开(公告)号：US20240117219A1

公开(公告)日：2024-04-11

申请号：US18275321

申请日：2022-02-02

Applicant: FUJIMI INCORPORATED

Inventor： Yasuaki ITO ,  Hiroyuki ODA ,  Yuichiro NAKAGAI ,  Shogaku IDE ,  Naoto NOGUCHI ,  Shinichiro TAKAMI

IPC: C09G1/02 ,  B24B37/04

CPC classification number: C09G1/02 ,  B24B37/044 ,  H01L21/30625

Abstract: Provided is a polishing composition that can reduce increase in temperature of a polishing pad during polishing. The polishing composition provided by the present invention contains water, oxidant A selected from compounds other than peroxide, a first metal salt selected from alkaline-earth metal salts, and a second metal salt selected from salts each of which has a cation of a metal belonging to groups 3 to 16 in the periodic table, and an anion.