Semiconductor laser for operation in librational modes
    1.
    发明授权
    Semiconductor laser for operation in librational modes 有权
    半导体激光器用于演示模式

    公开(公告)号:US06333944B1

    公开(公告)日:2001-12-25

    申请号:US09591716

    申请日:2000-06-12

    IPC分类号: H01S3083

    CPC分类号: H01S3/083

    摘要: A solid state laser comprises a cavity resonator in the form of a generally cylindrical body and, located within the resonator, an active region which generates lasing light when suitably pumped. The resonator has a relatively high effective refractive index (n>2 and typically n>3) is sufficiently deformed from circularity so as to support at least one librational mode (e.g., a V-shaped or a bow-tie mode, the latter being presently preferred for generating relatively high power, directional outputs). Specifically described is a Group III-V compound semiconductor, quantum cascade (QC), micro-cylinder laser in which the resonator has a flattened quadrupolar deformation from circularity. This laser exhibits both a highly directional output emission and a three-order of magnitude increase in optical output power compared to conventional semiconductor micro-cylinder QC lasers having circularly symmetric resonators.

    摘要翻译: 固体激光器包括呈大致圆柱形体形式的空腔谐振器,并且位于谐振器内部的有源区域,其在适当泵浦时产生激光。 谐振器具有相对较高的有效折射率(n> 2且通常n> 3)从圆形度充分变形,以便支持至少一种示范模式(例如,V形或蝴蝶结模式,后者为 目前优选用于产生相对高功率的方向输出)。 具体描述的是其中谐振器具有从圆形度的扁平四极变形的III-V族化合物半导体,量子级联(QC),微圆柱激光器。 与具有圆形对称谐振器的常规半导体微型气缸QC激光器相比,该激光器表现出高度方向性的输出发射和光输出功率三位数的增加。

    Solid state laser for operation in librational modes
    2.
    发明授权
    Solid state laser for operation in librational modes 失效
    固态激光器用于演示模式

    公开(公告)号:US6134257A

    公开(公告)日:2000-10-17

    申请号:US63577

    申请日:1998-04-21

    CPC分类号: H01S3/083

    摘要: A solid state laser comprises a cavity resonator in the form of a generally cylindrical body and, located within the resonator, an active region which generates lasing light when suitably pumped. The resonator has a relatively high effective refractive index (n>2 and typically n>3) is sufficiently deformed from circularity so as to support at least one librational mode (e.g., a V-shaped or a bow-tie mode, the latter being presently preferred for generating relatively high power, directional outputs). Specifically described is a Group III-V compound semiconductor, quantum cascade (QC), micro-cylinder laser in which the resonator has a flattened quadrupolar deformation from circularity. This laser exhibits both a highly directional output emission and a three-order of magnitude increase in optical output power compared to conventional semiconductor micro-cylinder QC lasers having circularly symmetric resonators.

    摘要翻译: 固体激光器包括呈大致圆柱形体形式的空腔谐振器,并且位于谐振器内部的有源区域,其在适当泵浦时产生激光。 谐振器具有相对较高的有效折射率(n> 2且通常n> 3)从圆形度充分变形,以便支持至少一种示范模式(例如,V形或蝴蝶结模式,后者为 目前优选用于产生相对高功率的方向输出)。 具体描述的是其中谐振器具有从圆形度的扁平四极变形的III-V族化合物半导体,量子级联(QC),微圆柱激光器。 与具有圆形对称谐振器的常规半导体微型气缸QC激光器相比,该激光器表现出高度方向性的输出发射和光输出功率三位数的增加。

    Optical amplifier for quantum cascade laser
    3.
    发明授权
    Optical amplifier for quantum cascade laser 有权
    用于量子级联激光器的光放大器

    公开(公告)号:US06836499B2

    公开(公告)日:2004-12-28

    申请号:US10155562

    申请日:2002-05-24

    IPC分类号: H01S500

    摘要: Techniques for amplifying light produced by a quantum cascade laser are described. An assembly according to the present invention includes an optical amplifier having an optical input and an optical output. The optical output has an area significantly greater than that of the optical output and the geometry of the amplifier is such that the amplifier widens from the optical input to the optical output. The optical amplifier is formed of a layered waveguide structure which achieves quantum confinement of electrons and photons within the active region. A distributed feedback laser is suitably coupled to the optical amplifier at the optical input of the amplifier. The widening of the amplifier makes available a large number of electrons, so that the amplifier is able to produce many photons resulting from stimulated transitions caused by introduction of light to the optical input of the amplifier, even if the great majority of the transitions occur nonradiatively.

    摘要翻译: 描述用于放大由量子级联激光器产生的光的技术。 根据本发明的组件包括具有光输入和光输出的光放大器。 光输出具有明显大于光输出的面积,并且放大器的几何形状使得放大器从光输入增宽到光输出。 光放大器由层状波导结构形成,其在有源区内实现电子和光子的量子限制。 分布式反馈激光器适当地耦合到放大器的光输入处的光放大器。 放大器的加宽使得可以获得大量的电子,使得放大器能够产生由于通过向放大器的光输入引入光引起的受激变换而产生的许多光子,即使绝大多数的跃迁是非辐射的 。

    Engineering the gain/loss profile of intersubband optical devices having heterogeneous cascades
    4.
    发明授权
    Engineering the gain/loss profile of intersubband optical devices having heterogeneous cascades 有权
    设计具有异质级联的子带间光学器件的增益/损耗曲线

    公开(公告)号:US06728282B2

    公开(公告)日:2004-04-27

    申请号:US09883542

    申请日:2001-06-18

    IPC分类号: H01S500

    摘要: An optical device includes a stack of at least two different intersubband (ISB) optical sub-devices in which the gain/loss profiles of the individual ISB sub-devices are mutually adapted, or engineered, so as to generate a predetermined overall function for the combination. We define this combination device as being heterogeneous since not all of the individual ISB sub-devices are identical to one another. Illustratively, the parameters of each individual ISB sub-device that might be subject to this engineering process include: the peak energy of the ISB optical transitions (emission or absorption) associated with each RT region, the position of each sub-device in the stack; the oscillator strengths of these ISB transitions; the energy bandwidth of each transition; and the total length of the RT and I/R regions of each ISB sub-device. In one embodiment, our approach may be used to engineer a gain profile that has peaks at a multiplicity of different wavelengths, thus realizing a multi-wavelength ISB optical source in which the applied electric field self-proportions itself so that each individual ISB sub-device experiences the appropriate field strength for its particular design. Alternatively, the gain profile may be engineered to be relatively flat over a predetermined wavelength range. In another embodiment, our approach may be used to generate a function that compensates for a characteristic of another device. For example, our heterogeneous ISB device may be engineered to have a gain profile that compensates for the loss profile of another device. Alternatively, the gain/loss profile may be engineered to produce a nonlinear refractive index profile in our device that compensates for that of another device (e.g., an optical fiber).

    摘要翻译: 光学装置包括至少两个不同的子带间(ISB)光学子装置的叠层,其中各个ISB子装置的增益/损耗曲线相互适应或设计,以便产生预定的整体功能 组合。 我们将此组合设备定义为异构,因为并非所有的单个ISB子设备都是相同的。 示例性地,可能受该工程过程影响的各个ISB子设备的参数包括:与每个RT区域相关联的ISB光学跃迁(发射或吸收)的峰值能量,堆叠中每个子设备的位置 ; 这些ISB转换的振荡器强度; 每个过渡的能量带宽; 以及每个ISB子设备的RT和I / R区域的总长度。 在一个实施例中,我们的方法可以用于设计在多个不同波长处具有峰值的增益分布,从而实现多波长ISB光源,其中所施加的电场自身比例,使得每个单独的ISB子载波, 设备体验其特定设计的适当场强。 或者,增益分布可以被设计为在预定波长范围上相对平坦。 在另一个实施例中,我们的方法可以用于产生补偿另一设备的特性的功能。 例如,我们的异构ISB设备可以被设计为具有补偿另一设备的丢失简档的增益简档。 或者,增益/损耗曲线可以被设计为在我们的装置中产生非线性折射率分布,其补偿另一装置(例如,光纤)的折射率分布。

    Intersubband light source with separate electron injector and reflector/extractor
    5.
    发明授权
    Intersubband light source with separate electron injector and reflector/extractor 有权
    带有独立电子注入器和反射器/提取器的带内光源

    公开(公告)号:US06324199B1

    公开(公告)日:2001-11-27

    申请号:US09195260

    申请日:1998-11-18

    IPC分类号: H01S500

    CPC分类号: B82Y20/00 H01S5/3402

    摘要: An intersubband semiconductor light source comprises a core region that includes a unipolar, radiative transition (RT) region having upper and lower energy levels, an injector-only (I) region disposed on one side of the RT region, and a reflector/extractor-only (R/E) region disposed on the other side of the RT region. The I region has a first miniband of energy levels aligned so as to inject electrons into the upper energy level, and the R/E region has a second miniband of energy levels aligned so as to extract electrons from the lower energy level. The R/E region also has a minigap aligned so as to inhibit the extraction of electrons from the upper level. A suitable voltage applied across the core region is effective to cause the RT region to generate light at a wavelength determined by the energy difference between the upper and lower energy levels. Low voltage operation at less than 3 V is described.

    摘要翻译: 子带间半导体光源包括芯区域,其包括具有上和下能级的单极辐射跃迁(RT)区域,设置在RT区域的一侧上的仅注射器(I)区域,以及反射器/ (R / E)区域设置在RT区域的另一侧。 I区具有对准能量水平的第一小能级以将电子注入到上能量级中,并且R / E区具有对准的能级的第二小容纳,从而从较低的能级提取电子。 R / E区域也具有微小的栅极排列,从而抑制从上层提取电子。 在芯区域上施加的合适电压有效地使得RT区域产生由上和下能量级之间的能量差确定的波长的光。 描述低于3V的低电压操作。

    Long wavelength semiconductor lasers incorporating waveguides based on surface plasmons
    9.
    发明授权
    Long wavelength semiconductor lasers incorporating waveguides based on surface plasmons 失效
    结合基于表面等离子体激元的波导的长波长半导体激光器

    公开(公告)号:US06301282B1

    公开(公告)日:2001-10-09

    申请号:US09124295

    申请日:1998-07-29

    IPC分类号: H01S500

    摘要: A long wavelength (e.g., mid-IR to far-IR) semiconductor laser comprises an active region and at least one cladding region characterized in that the cladding region includes a light guiding interface between two materials which have dielectric constants opposite in sign. Consequently, the guided modes are transverse magnetic polarized surface waves (i.e., surface plasmons) which propagate along the interface without the need for a traditional dielectric cladding. In a preferred embodiment, the interface is formed between a semiconductor layer and a metal layer. The complex refractive index of the metal layer preferably has an imaginary component which is much larger than its real component. In an illustrative embodiment, our laser includes a QC active region sandwiched between a pair of cladding regions one of which is a guiding interface based on surface plasmons and the other of which is a dielectric (e.g., semiconductor) structure.

    摘要翻译: 长波长(例如,中红外至红外IR)半导体激光器包括有源区和至少一个包层区,其特征在于包层区包括具有与符号相反的介电常数的两种材料之间的导光界面。 因此,引导模式是横向磁极化表面波(即,表面等离子体激元),其沿着界面传播而不需要传统的电介质包层。 在优选实施例中,界面形成在半导体层和金属层之间。 金属层的复合折射率优选具有远大于其实际分量的虚部。 在说明性实施例中,我们的激光器包括夹在一对包层区域之间的QC有源区域,其中一个是基于表面等离子体激元的引导界面,另一个是电介质(例如半导体)结构。

    Unipolar, intraband optoelectronic transducers with micro-cavity resonators
    10.
    发明授权
    Unipolar, intraband optoelectronic transducers with micro-cavity resonators 有权
    具有微腔谐振器的单极,内部光电转换器

    公开(公告)号:US07092421B2

    公开(公告)日:2006-08-15

    申请号:US10651466

    申请日:2003-08-30

    IPC分类号: H01S3/19

    摘要: An optoelectronic transducer comprises a unipolar, intraband active region and a micro-cavity resonator. The resonator includes a 2D array of essentially equally spaced regions that exhibits resonant modes. Each of the spaced regions has a depth that extends through the active region and has an average refractive index that is different from that of the active region. The refractive index contrast, the spacing of the spaced regions, and the dimensions of the spaced regions are mutually adapted so that the array acts as a micro-cavity resonator and so that at least one frequency of the resonant modes of the array falls within the spectrum of an optoelectronic parameter of the active region (i.e., the gain spectrum where the transducer is a laser; the absorption spectrum where the transducer is a photodetector). In a first embodiment, the transducer is an ISB laser, whereas in a second embodiment it is a unipolar, intraband photodetector. In other embodiments, the laser is a surface-emitting ISB laser and the photodetector is a vertically-illuminated detector. In another embodiment, a nonlinear optical material is optically coupled to the micro-cavity resonator, which in one case allows an ISB laser to exhibit bistable operation.

    摘要翻译: 光电转换器包括单极性,内部有源区和微腔谐振器。 谐振器包括呈现谐振模式的基本上等间隔的区域的2D阵列。 每个间隔区域具有延伸穿过有源区域并具有不同于有源区域的平均折射率的深度。 折射率对比度,间隔区域的间隔和间隔区域的尺寸相互适应,使得阵列充当微腔谐振器,并且使得阵列的谐振模式的至少一个频率落入 有源区的光电参数的光谱(即,换能器是激光的增益光谱;换能器是光电检测器的吸收光谱)。 在第一实施例中,换能器是ISB激光器,而在第二实施例中,它是单极的,内部的光检测器。 在其他实施例中,激光是表面发射ISB激光器,并且光电检测器是垂直照明的检测器。 在另一个实施例中,非线性光学材料光耦合到微腔谐振器,在一种情况下允许ISB激光器呈现双稳态操作。