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    Long wavelength semiconductor lasers incorporating waveguides based on surface plasmons
    1.
    发明授权
    Long wavelength semiconductor lasers incorporating waveguides based on surface plasmons 失效
    结合基于表面等离子体激元的波导的长波长半导体激光器

    公开(公告)号：US06301282B1

    公开(公告)日：2001-10-09

    申请号：US09124295

    申请日：1998-07-29

    申请人： Federico Capasso ,  Alfred Yi Cho ,  Claire F. Gmachl ,  Albert Lee Hutchinson ,  Deborah Lee Sivco ,  Jerome Faist ,  Carlo Sirtori

    发明人： Federico Capasso ,  Alfred Yi Cho ,  Claire F. Gmachl ,  Albert Lee Hutchinson ,  Deborah Lee Sivco ,  Jerome Faist ,  Carlo Sirtori

    IPC分类号： H01S500

    CPC分类号： B82Y20/00 ,  H01S5/10 ,  H01S5/1046 ,  H01S5/323 ,  H01S5/3402 ,  H01S2301/145

    摘要： A long wavelength (e.g., mid-IR to far-IR) semiconductor laser comprises an active region and at least one cladding region characterized in that the cladding region includes a light guiding interface between two materials which have dielectric constants opposite in sign. Consequently, the guided modes are transverse magnetic polarized surface waves (i.e., surface plasmons) which propagate along the interface without the need for a traditional dielectric cladding. In a preferred embodiment, the interface is formed between a semiconductor layer and a metal layer. The complex refractive index of the metal layer preferably has an imaginary component which is much larger than its real component. In an illustrative embodiment, our laser includes a QC active region sandwiched between a pair of cladding regions one of which is a guiding interface based on surface plasmons and the other of which is a dielectric (e.g., semiconductor) structure.

    摘要翻译： 长波长（例如，中红外至红外IR）半导体激光器包括有源区和至少一个包层区，其特征在于包层区包括具有与符号相反的介电常数的两种材料之间的导光界面。 因此，引导模式是横向磁极化表面波（即，表面等离子体激元），其沿着界面传播而不需要传统的电介质包层。 在优选实施例中，界面形成在半导体层和金属层之间。 金属层的复合折射率优选具有远大于其实际分量的虚部。 在说明性实施例中，我们的激光器包括夹在一对包层区域之间的QC有源区域，其中一个是基于表面等离子体激元的引导界面，另一个是电介质（例如半导体）结构。

    Article comprising a dual-wavelength quantum cascade photon source
    5.
    发明授权
    Article comprising a dual-wavelength quantum cascade photon source 失效
    文章包括双波长量子级联光子源

    公开(公告)号：US6144681A

    公开(公告)日：2000-11-07

    申请号：US033250

    申请日：1998-03-02

    申请人： Federico Capasso ,  Alfred Yi Cho ,  Jerome Faist ,  Albert Lee Hutchinson ,  Carlo Sirtori ,  Deborah Lee Sivco ,  Alessandro Tredicucci

    发明人： Federico Capasso ,  Alfred Yi Cho ,  Jerome Faist ,  Albert Lee Hutchinson ,  Carlo Sirtori ,  Deborah Lee Sivco ,  Alessandro Tredicucci

    IPC分类号： H01L33/06 ,  H01S5/00 ,  H01S5/34 ,  H01S3/19

    CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01S5/3402 ,  H01S5/1096

    摘要： The quantum cascade (QC) photon source according to this invention can emit simultaneously at two distinct wavelengths, typically both in the mid-infrared. This is accomplished through provision of a semiconductor layer structure in which, at the proper bias voltage, electrons are injected into an energy level E.sub.3 and then forced to cascade through an intermediate level E.sub.2 before reaching the ground state E.sub.1 of the active region. In the process, photons of energy E.sub.3 -E.sub.2 (wavelength .lambda..sub.1) and E.sub.2 -E.sub.1 (wavelength .lambda..sub.2) are emitted. Dual wavelength photon sources according to this invention can be used in a variety of ways, e.g., to determine the absorption of a gaseous sample at wavelengths .lambda..sub.1 and .lambda..sub.2, exemplarily to determine the concentration of a particular chemical compound in the sample.

    摘要翻译： 根据本发明的量子级联（QC）光子源可以以两个不同的波长同时发射，通常在中红外。 这是通过提供半导体层结构来实现的，其中在适当的偏置电压下，电子被注入到能级E3中，然后在到达有源区的基态E1之前强制级联通过中间电平E2。 在该过程中，发射能量为E3-E2（波长λ1）和E2-E1（波长λ2）的光子。 根据本发明的双波长光子源可以以多种方式使用，例如确定波长λ1和λ2处的气体样品的吸收，例如用于确定样品中特定化合物的浓度。

    Quantum cascade laser
    6.
    发明授权
    Quantum cascade laser 失效
    量子级联激光器

    公开(公告)号：US5936989A

    公开(公告)日：1999-08-10

    申请号：US841059

    申请日：1997-04-29

    申请人： Federico Capasso ,  Alfred Yi Cho ,  Jerome Faist ,  Albert Lee Hutchinson ,  Gaetano Scamarcio ,  Carlo Sirtori ,  Deborah Lee Sivco

    发明人： Federico Capasso ,  Alfred Yi Cho ,  Jerome Faist ,  Albert Lee Hutchinson ,  Gaetano Scamarcio ,  Carlo Sirtori ,  Deborah Lee Sivco

    IPC分类号： H01S5/34 ,  H01S5/343 ,  H01S3/19

    CPC分类号： B82Y20/00 ,  H01S5/3402 ,  H01S5/34306 ,  H01S5/34313

    摘要： The core of the disclosed novel quantum cascade (QC) laser comprises a multiplicity of nominally identical repeat units, with a given repeat unit comprising a superlattice active region and a carrier injector region. Associated with the superlattice active region is an upper and a lower energy miniband, with the lasing transition being the transition from the lower edge of the upper miniband to the upper edge of the lower miniband. The injector facilitates carrier transport from the lower miniband to the upper miniband of the adjacent downstream repeat unit. QC lasers according to this invention can be designed to emit in the infrared, e.g., in the wavelength region 3-15 .mu.m, and can have high power.

    摘要翻译： 公开的新颖量子级联（QC）激光器的核心包括多个名义上相同的重复单元，其中给定的重复单元包括超晶格有源区和载流子注入区。 与超晶格有源区相关联的是上能和下能量的迷你波导，其中激光跃迁是从上微型小型飞机的下边缘到下部小型飞机的上边缘的过渡。 注射器便于载体从相邻的下游重复单元的下部微型飞行器到上部小型飞机传送。 根据本发明的QC激光器可以设计成在红外线中发射，例如在3-15μm的波长区域中，并且可以具有高功率。

    Article comprising an improved quantum cascade laser
    7.
    发明授权
    Article comprising an improved quantum cascade laser 失效
    文章包括改进的量子级联激光器

    公开(公告)号：US5727010A

    公开(公告)日：1998-03-10

    申请号：US618886

    申请日：1996-03-20

    申请人： Federico Capasso ,  Alfred Yi Cho ,  Jerome Faist ,  Albert Lee Hutchinson ,  Carlo Sirtori ,  Deborah Lee Sivco

    发明人： Federico Capasso ,  Alfred Yi Cho ,  Jerome Faist ,  Albert Lee Hutchinson ,  Carlo Sirtori ,  Deborah Lee Sivco

    IPC分类号： H01S5/00 ,  H01S5/34 ,  H01S3/19 ,  H01S3/18

    CPC分类号： B82Y20/00 ,  H01S5/3402

    摘要： The disclosed improved quantum cascade (QC) laser comprises features that facilitate lasing at temperatures above 260 K, preferably above 300 K. Among the features is a wavefunction-increasing feature that enhances the amplitude of the lasing level wavefunction in the adjacent upstream barrier layer, thereby increasing carrier injection efficiency into the lasing level. Exemplarily, the wavefunction-increasing feature is an approximately disposed thin quantum well. Among the features typically is also a chirped superlattice in the injection/relaxation region that acts as a Bragg reflector to suppress escape of carriers from the lasing level in the continuum, while facilitating carrier extraction from the ground state into a miniband, with the energy width of the miniband decreasing over at least a portion of the thickness of the injection/relaxation region.

    摘要翻译： 所公开的改进的量子级联（QC）激光器包括在260K以上，优选高于300K的温度下促进激光的特征。其特征在于增加相邻上游阻挡层中激光电平波函数的幅度的波函数增加特征， 从而将载体注入效率提高到激光级。 示例性地，波函数增加特征是大致布置的薄量子阱。 其中的特征通常也是注入/弛豫区域中的啁啾超晶格，其作为布拉格反射器，以抑制载流子从连续体中的激光闪烁级别的逸出，同时促进载体从基态提取到微型计算机中，其能量宽度 的最小值在注入/松弛区域的厚度的至少一部分上减小。

    Unipolar semiconductor laser
    9.
    发明授权
    Unipolar semiconductor laser 失效
    单极半导体激光器

    公开(公告)号：US5457709A

    公开(公告)日：1995-10-10

    申请号：US223341

    申请日：1994-04-04

    申请人： Federico Capasso ,  Alfred Y. Cho ,  Jerome Faist ,  Albert L. Hutchinson ,  Serge Luryi ,  Carlo Sirtori ,  Deborah L. Sivco

    发明人： Federico Capasso ,  Alfred Y. Cho ,  Jerome Faist ,  Albert L. Hutchinson ,  Serge Luryi ,  Carlo Sirtori ,  Deborah L. Sivco

    IPC分类号： H01S3/106 ,  H01S5/062 ,  H01S5/12 ,  H01S5/34 ,  H01S3/19

    CPC分类号： B82Y20/00 ,  H01S5/34 ,  H01S5/3402 ,  H01S3/1068 ,  H01S5/0614 ,  H01S5/06243 ,  H01S5/1228 ,  H01S5/3419

    摘要： This application discloses, to the best of our knowledge, the first unipolar laser. An exemplary embodiment of the laser was implemented in the GaInAs/AlInAs system and emits radiation of about 4.2 .mu.m wavelength. Embodiments in other material systems are possible, and the lasers can be readily designed to emit at a predetermined wavelength in a wide spectral region. We have designated the laser the "quantum cascade" (QC) laser. The QC laser comprises a multilayer semiconductor structure that comprises a multiplicity of essentially identical undoper "active" regions, a given active region being separated from an adjoining one by a doped "energy relaxation" region. In a currently preferred embodiment each active region comprises three coupled quantum wells designed to facilitate attainment of population inversion. In the currently preferred embodiment the energy relaxation regions are digitally graded gap regions. However, other energy relaxation regions are possible. The unipolar plasma in a unipolar laser can be manipulated by means of an electric "control" field, facilitating, for instance, beam steering or external control of the modal gain of the laser. Means for accomplishing this are discussed.

    摘要翻译： 根据我们所知，本应用公开了第一单极激光器。 激光器的示例性实施例在GaInAs / AlInAs系统中实现并且发射约4.2μm波长的辐射。 其他材料系统中的实施例是可能的，并且激光器可以容易地设计成在宽光谱区域中以预定波长发射。 我们已经将激光器命名为“量子级联”（QC）激光器。 QC激光器包括多层半导体结构，其包括多个基本上相同的未掺杂的“活性”区域，给定的有源区域通过掺杂的“能量弛豫”区域与邻接的区域分离。 在当前优选实施例中，每个有源区域包括三个耦合的量子阱，被设计成有助于达到群体反转。 在当前优选的实施例中，能量松弛区域是数字渐变间隙区域。 然而，其他能量松弛区也是可能的。 单极激光器中的单极性等离子体可以通过电气“控制”场进行操纵，从而有助于例如光束转向或激光的模态增益的外部控制。 讨论了实现这一点的手段。