公开(公告)号：US09559284B2

公开(公告)日：2017-01-31

申请号：US14659749

申请日：2015-03-17

Applicant: GLOBALFOUNDRIES INC.

Inventor： Josephine B. Chang ,  Paul Chang ,  Guy M. Cohen ,  Michael A. Guillorn

IPC: B05D5/12 ,  H01L39/02 ,  H01L39/22 ,  H01L39/24

CPC classification number: H01L39/025 ,  B05D5/12 ,  H01L39/223 ,  H01L39/2467 ,  H01L39/2493

Abstract: Silicided nanowires as nanobridges in Josephson junctions. A superconducting silicided nanowire is used as a weak-link bridge in a Josephson junction, and a fabrication process is employed to produce silicided nanowires that includes patterning two junction banks and a rough nanowire from a silicon substrate, reshaping the nanowire through hydrogen annealing, and siliciding the nanowire by introduction of a metal into the nanowire structure.

Abstract translation: 硅石纳米线作为约瑟夫逊结中的纳米桥。 在约瑟夫逊结中使用超导硅化物纳米线作为弱连接桥，并且制造工艺用于制造硅化物纳米线，其包括从硅衬底图案化两个连接堤和粗糙的纳米线，通过氢退火重新形成纳米线，以及 通过在纳米线结构中引入金属来硅化纳米线。

公开(公告)号：US20160276570A1

公开(公告)日：2016-09-22

申请号：US14659749

申请日：2015-03-17

Applicant: GLOBALFOUNDRIES INC.

Inventor： Josephine B. Chang ,  Paul Chang ,  Guy M. Cohen ,  Michael A. Guillorn

IPC: H01L39/02 ,  H01L39/24 ,  H01L39/22

CPC classification number: H01L39/025 ,  B05D5/12 ,  H01L39/223 ,  H01L39/2467 ,  H01L39/2493

Abstract: Silicided nanowires as nanobridges in Josephson junctions. A superconducting silicided nanowire is used as a weak-link bridge in a Josephson junction, and a fabrication process is employed to produce silicided nanowires that includes patterning two junction banks and a rough nanowire from a silicon substrate, reshaping the nanowire through hydrogen annealing, and siliciding the nanowire by introduction of a metal into the nanowire structure.

Abstract translation: 硅石纳米线作为约瑟夫逊结中的纳米桥。 在约瑟夫逊结中使用超导硅化物纳米线作为弱连接桥，并且制造工艺用于制造硅化物纳米线，其包括从硅衬底图案化两个连接堤和粗糙的纳米线，通过氢退火重新形成纳米线，以及 通过在纳米线结构中引入金属来硅化纳米线。

公开(公告)号：US09431520B2

公开(公告)日：2016-08-30

申请号：US14810017

申请日：2015-07-27

Applicant: GLOBALFOUNDRIES INC.

Inventor： Guy M. Cohen ,  Christos D. Dimitrakopoulos ,  Alfred Grill

IPC: H01L29/66 ,  H01L29/775 ,  H01L21/3105 ,  H01L21/306 ,  H01L21/02 ,  H01L21/324 ,  B82Y10/00 ,  B82Y40/00 ,  H01L29/06 ,  H01L29/10 ,  H01L29/16 ,  H01L51/00 ,  H01L21/28 ,  H01L29/78 ,  H01L51/05 ,  B82Y99/00

CPC classification number: H01L29/66795 ,  B82Y10/00 ,  B82Y40/00 ,  B82Y99/00 ,  H01L21/02057 ,  H01L21/02381 ,  H01L21/02527 ,  H01L21/02529 ,  H01L21/02636 ,  H01L21/28008 ,  H01L21/30604 ,  H01L21/31051 ,  H01L21/324 ,  H01L29/0673 ,  H01L29/1025 ,  H01L29/1606 ,  H01L29/66439 ,  H01L29/66742 ,  H01L29/66787 ,  H01L29/775 ,  H01L29/785 ,  H01L51/0045 ,  H01L51/0048 ,  H01L51/0558

Abstract: Semiconductor structures including parallel graphene nanoribbons or carbon nanotubes oriented along crystallographic directions are provided from a template of silicon carbide (SiC) fins or nanowires. The SiC fins or nanowires are first provided and then graphene nanoribbons or carbon nanotubes are formed on the exposed surfaces of the fin or the nanowires by annealing. In embodiments in which closed carbon nanotubes are formed, the nanowires are suspended prior to annealing. The location, orientation and chirality of the graphene nanoribbons and the carbon nanotubes that are provided are determined by the corresponding silicon carbide fins and nanowires from which they are formed.