公开(公告)号：US20150318351A1

公开(公告)日：2015-11-05

申请号：US14267541

申请日：2014-05-01

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Xusheng WU ,  Xiang HU ,  Changyong XIAO ,  Wanxun HE

IPC: H01L29/06 ,  H01L29/161 ,  H01L21/02 ,  H01L29/78 ,  H01L21/8234 ,  H01L21/308 ,  H01L29/16 ,  H01L27/088

CPC classification number: H01L29/161 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/02532 ,  H01L21/0259 ,  H01L21/02639 ,  H01L21/02664 ,  H01L21/823431 ,  H01L27/0886 ,  H01L29/0657 ,  H01L29/7853

Abstract: A non-planar semiconductor structure includes raised semiconductor structures, e.g., fins, having epitaxial structures grown on top surfaces thereof, for example, epitaxial silicon naturally growing into a diamond shape. The surface area of the epitaxial structure may be increased by removing portion(s) thereof. The removal may create a multi-head (e.g., dual-head) epitaxial structure, together with the neck of the raised structure resembling a Y-shape. Raised structures that are not intended to include an epitaxial structure will be masked during epitaxial structure creation and modification. In addition, in order to have a uniform height, the filler material surrounding the raised structures is recessed around those to receive epitaxial structures.

Abstract translation: 非平面半导体结构包括凸起的半导体结构，例如具有在其顶表面上生长的外延结构的翅片，例如外延硅自然生长成菱形。 可以通过去除外延结构的部分来增加外延结构的表面积。 移除可以与类似于Y形的凸起结构的颈部一起形成多头（例如双头）外延结构。 在外延结构的制造和修改过程中，不会包含外延结构的凸起结构将被掩蔽。 此外，为了具有均匀的高度，围绕凸起结构的填充材料围绕接收外延结构的填充材料凹入。

公开(公告)号：US20160315084A1

公开(公告)日：2016-10-27

申请号：US14691960

申请日：2015-04-21

Applicant: GLOBALFOUNDRIES INC.

Inventor： Xusheng WU ,  HongLiang SHEN ,  Changyong XIAO ,  Jianhua YIN ,  Jie CHEN ,  Jin Ping LIU ,  Hong YU ,  Zhenyu HU ,  Lan YANG ,  Wanxun HE

IPC: H01L27/092 ,  H01L29/10 ,  H01L21/8238

CPC classification number: H01L27/0924 ,  H01L21/823807 ,  H01L21/823821 ,  H01L21/82385 ,  H01L29/1033

Abstract: There is set forth herein in one embodiment a semiconductor structure having a first region and a second region. The first region can include fins of a first fin height and the second region can include fins of a second fin height.

Abstract translation: 这里在一个实施例中阐述了具有第一区域和第二区域的半导体结构。 第一区域可以包括第一翅片高度的翅片，并且第二区域可以包括具有第二翅片高度的翅片。

公开(公告)号：US20160155799A1

公开(公告)日：2016-06-02

申请号：US15002000

申请日：2016-01-20

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Xusheng WU ,  Changyong XIAO ,  Xiang HU ,  Wanxun HE

IPC: H01L29/06 ,  H01L29/20 ,  H01L29/161 ,  H01L27/092 ,  H01L29/16

CPC classification number: H01L29/0657 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/02532 ,  H01L21/02538 ,  H01L21/02546 ,  H01L21/0259 ,  H01L21/02639 ,  H01L21/02664 ,  H01L21/30604 ,  H01L21/823807 ,  H01L21/823821 ,  H01L27/0922 ,  H01L27/0924 ,  H01L29/0692 ,  H01L29/16 ,  H01L29/161 ,  H01L29/20 ,  H01L29/201

Abstract: A non-planar semiconductor structure includes mixed n-and-p type raised semiconductor structures, e.g., fins, having epitaxial structures grown on top surfaces thereof, for example, epitaxial silicon and silicon germanium, naturally growing into a diamond shape. The surface area of the epitaxial structures is increased by removing portion(s) thereof, masking each type as the other type is grown and then subsequently modified by the removal. The removal may create multi-head (e.g., dual-head) epitaxial structures, together with the neck of the respective raised structure resembling a Y-shape.

Abstract translation: 非平面半导体结构包括混合的n型和p型凸起半导体结构，例如具有在其顶表面上生长的外延结构的散热片，例如外延硅和硅锗，天然生长成菱形。 外延结构的表面积通过去除其部分而增加，当另一种类型生长然后随后通过去除而修饰时，掩蔽每种类型。 移除可以与类似于Y形的相应凸起结构的颈部一起产生多头（例如，双头）外延结构。

公开(公告)号：US20150318217A1

公开(公告)日：2015-11-05

申请号：US14267611

申请日：2014-05-01

Applicant: GLOBALFOUNDRIES INC.

Inventor： Xusheng WU ,  Xiang HU ,  Changyong XIAO ,  Wanxun HE

IPC: H01L21/8238 ,  H01L21/02 ,  H01L29/201 ,  H01L29/161 ,  H01L29/16 ,  H01L21/306 ,  H01L27/092

CPC classification number: H01L29/0657 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/02532 ,  H01L21/02538 ,  H01L21/02546 ,  H01L21/0259 ,  H01L21/02639 ,  H01L21/02664 ,  H01L21/30604 ,  H01L21/823807 ,  H01L21/823821 ,  H01L27/0922 ,  H01L27/0924 ,  H01L29/0692 ,  H01L29/16 ,  H01L29/161 ,  H01L29/20 ,  H01L29/201

Abstract: A non-planar semiconductor structure includes mixed n-and-p type raised semiconductor structures, e.g., fins, having epitaxial structures grown on top surfaces thereof, for example, epitaxial silicon and silicon germanium, naturally growing into a diamond shape. The surface area of the epitaxial structures is increased by removing portion(s) thereof, masking each type as the other type is grown and then subsequently modified by the removal. The removal may create multi-head (e.g., dual-head) epitaxial structures, together with the neck of the respective raised structure resembling a Y-shape.

Abstract translation: 非平面半导体结构包括混合的n型和p型凸起半导体结构，例如具有在其顶表面上生长的外延结构的散热片，例如外延硅和硅锗，天然生长成菱形。 外延结构的表面积通过去除其部分而增加，当另一种类型生长然后随后通过去除而修饰时，掩蔽每种类型。 移除可以与类似于Y形的相应凸起结构的颈部一起产生多头（例如，双头）外延结构。