公开(公告)号：US06874443B2

公开(公告)日：2005-04-05

申请号：US10086497

申请日：2002-02-28

申请人： Geun-young Yeom ,  Min-jae Chung ,  Do-haing Lee ,  Sung-min Cho ,  Sae-hoon Chung

发明人： Geun-young Yeom ,  Min-jae Chung ,  Do-haing Lee ,  Sung-min Cho ,  Sae-hoon Chung

IPC分类号： H01L21/3065 ,  C23F4/00 ,  C23C16/00 ,  C23F1/00

CPC分类号： C23F4/00 ,  H01J2237/08

摘要： A layer-by-layer etching apparatus and an etching method using a neutral beam which enables to control etching depth to an atomic level by controlling the etching of each atom of a material layer to be etched under precise control of the supply of an etching gas and irradiation of the neutral beam and enables to minimize etching damage. In the layer-by-layer etching method, a substrate to be etched, on which a layer to be etched is exposed, is loaded on a stage in a reaction chamber. An etching gas is supplied into the reaction chamber to adsorb the etching gas on the surface of an exposed portion of the layer to be etched. Excessive etching gas remaining after being adsorbed is removed. A neutral beam is irradiated on the layer to be etched on which the etching gas is adsorbed. Etch by-products generated by the irradiation of the neutral beam is removed.

摘要翻译： 一种逐层蚀刻装置和使用中性光束的蚀刻方法，其能够通过在精确控制蚀刻气体的供给的精确控制下控制蚀刻材料层的每个原子的蚀刻，从而将蚀刻深度控制为原子水平 并照射中性光束并且能够最小化蚀刻损伤。 在逐层蚀刻方法中，将要蚀刻的层被蚀刻的基板暴露在反应室的台上。 将蚀刻气体供应到反应室中，以将蚀刻气体吸附在被蚀刻层的暴露部分的表面上。 吸附后残留的蚀刻气体过剩被去除。 中性光束照射在被蚀刻的蚀刻气体被吸附的层上。 除去由中性束的照射产生的副产物。

公开(公告)号：US07094702B2

公开(公告)日：2006-08-22

申请号：US10442566

申请日：2003-05-21

申请人： Geun-young Yeom ,  Min-jae Chung ,  Do-haing Lee ,  Sung-min Cho ,  Sae-hoon Chung

发明人： Geun-young Yeom ,  Min-jae Chung ,  Do-haing Lee ,  Sung-min Cho ,  Sae-hoon Chung

IPC分类号： H01L21/302

CPC分类号： C23F4/00 ,  H01J2237/08

摘要： A layer-by-layer etching apparatus and an etching method using a neutral beam which enables to control etching depth to an atomic level by controlling the etching of each atom of a material layer to be etched under precise control of the supply of an etching gas and irradiation of the neutral beam and enables to minimize etching damage. In the layer-by-layer etching method, a substrate to be etched, on which a layer to be etched is exposed, is loaded on a stage in a reaction chamber. An etching gas is supplied into the reaction chamber to adsorb the etching gas on the surface of an exposed portion of the layer to be etched. Excessive etching gas remaining after being adsorbed is removed. A neutral beam is irradiated on the layer to be etched on which the etching gas is adsorbed. Etch by-products generated by the irradiation of the neutral beam is removed.

公开(公告)号：US06926799B2

公开(公告)日：2005-08-09

申请号：US10086496

申请日：2002-02-28

申请人： Geun-young Yeom ,  Do-haing Lee ,  Min-jae Chung

发明人： Geun-young Yeom ,  Do-haing Lee ,  Min-jae Chung

IPC分类号： H01L21/3065 ,  C23F4/00 ,  H01J37/08 ,  H01L21/00

CPC分类号： C23F4/00 ,  H01J37/08

摘要： A damage-free apparatus for etching the large area by using a neutral beam which can perform an etching process without causing electrical and physical damages by the use of the neutral beam is provided. The damage-free etching apparatus includes: an ion source for extracting and accelerating an ion beam having a predetermined polarity; a grid positioned at the rear of the ion source and having a plurality of grid holes through which the ion beam passes; a reflector closely attached to the grid and having a plurality of reflector holes corresponding to the grid holes in the grid, the reflector for reflecting the ion beam passed through the grid holes in the reflector holes and neutralizing the ion beam into a neutral beam; and a stage for placing a substrate to be etched in a path of the neutral beam.

摘要翻译： 提供了一种用于通过使用能够执行蚀刻工艺而不会因使用中性光束造成电和物理损坏的中性光束来蚀刻大面积的无损伤设备。 无损伤蚀刻装置包括：用于提取和加速具有预定极性的离子束的离子源; 位于离子源的后部并具有多个栅格孔的栅极，离子束通过该栅格孔; 一个靠近网格的反射器，具有对应于格栅中的栅格孔的多个反射孔，反射器用于反射通过反射孔中的栅格孔的离子束，并将离子束中和成中性光束; 以及用于将要蚀刻的衬底放置在中性光束的路径中的阶段。

公开(公告)号：US08318412B2

公开(公告)日：2012-11-27

申请号：US12871251

申请日：2010-08-30

申请人： Tokashiki Ken ,  Chul-ho Shin ,  Sang-Kuk Kim ,  Do-haing Lee ,  Dong-seok Lee

发明人： Tokashiki Ken ,  Chul-ho Shin ,  Sang-Kuk Kim ,  Do-haing Lee ,  Dong-seok Lee

IPC分类号： G03F7/26

CPC分类号： H01L21/31138 ,  H01L21/0273 ,  H01L21/31144 ,  H01L21/76816 ,  H01L27/10855

摘要： A semiconductor device is manufactured by a method including processes of trimming and molding resist patterns. A resist layer formed on a substrate is exposed and developed to form the resist patterns. The resist patterns are trimmed using a first gas plasma to change the profiles of the resist patterns. Widths of the trimmed resist patterns are increased using a second gas plasma to form processed resist patterns.

摘要翻译： 通过包括修整和成型抗蚀剂图案的工艺的方法制造半导体器件。 形成在基板上的抗蚀剂层被曝光和显影以形成抗蚀剂图案。 使用第一气体等离子体来修整抗蚀剂图案以改变抗蚀剂图案的轮廓。 使用第二气体等离子体增加修整的抗蚀剂图案的宽度以形成经处理的抗蚀剂图案。

公开(公告)号：US20110159442A1

公开(公告)日：2011-06-30

申请号：US12871251

申请日：2010-08-30

申请人： Tokashiki Ken ,  Chul-ho Shin ,  Sang-Kuk Kim ,  Do-haing Lee ,  Dong-seok Lee

发明人： Tokashiki Ken ,  Chul-ho Shin ,  Sang-Kuk Kim ,  Do-haing Lee ,  Dong-seok Lee

IPC分类号： G03F7/20

CPC分类号： H01L21/31138 ,  H01L21/0273 ,  H01L21/31144 ,  H01L21/76816 ,  H01L27/10855

摘要： A semiconductor device is manufactured by a method including processes of trimming and molding resist patterns. A resist layer formed on a substrate is exposed and developed to form the resist patterns. The resist patterns are trimmed using a first gas plasma to change the profiles of the resist patterns. Widths of the trimmed resist patterns are increased using a second gas plasma to form processed resist patterns.

摘要翻译： 通过包括修整和成型抗蚀剂图案的工艺的方法制造半导体器件。 形成在基板上的抗蚀剂层被曝光和显影以形成抗蚀剂图案。 使用第一气体等离子体来修整抗蚀剂图案以改变抗蚀剂图案的轮廓。 使用第二气体等离子体增加修整的抗蚀剂图案的宽度以形成经处理的抗蚀剂图案。

公开(公告)号：US07858464B2

公开(公告)日：2010-12-28

申请号：US12346934

申请日：2008-12-31

申请人： Soo-doo Chae ,  Chung-woo Kim ,  Choong-man Lee ,  Yung-hee Lee ,  Chan-jin Park ,  Sung-wook Hwang ,  Jeong-hee Han ,  Do-haing Lee ,  Jin-seok Lee

发明人： Soo-doo Chae ,  Chung-woo Kim ,  Choong-man Lee ,  Yung-hee Lee ,  Chan-jin Park ,  Sung-wook Hwang ,  Jeong-hee Han ,  Do-haing Lee ,  Jin-seok Lee

IPC分类号： H01L21/336 ,  H01L21/8234 ,  H01L21/8238

CPC分类号： H01L21/31155 ,  H01L27/11568 ,  H01L29/66833 ,  H01L29/792

摘要： Methods of manufacturing non-volatile memory devices that can reduce or prevent loss of charges stored in a charge storage layer and/or that can improve charge storage capacity by neutral beam irradiation of an insulating layer are disclosed. The methods include forming a tunneling insulating layer on a substrate, forming a charge storage layer on the tunneling insulating layer, forming a blocking insulating layer on the charge storage layer, irradiating the blocking insulating layer and/or the tunneling insulating layer with a neutral beam, and forming a gate conductive layer on the blocking insulating layer.

摘要翻译： 公开了制造可以减少或防止存储在电荷存储层中的电荷损失和/或可通过绝缘层的中性束照射改善电荷存储容量的非易失性存储器件的制造方法。 所述方法包括在衬底上形成隧道绝缘层，在隧道绝缘层上形成电荷存储层，在电荷存储层上形成阻挡绝缘层，用中性光束照射阻挡绝缘层和/或隧道绝缘层 并且在所述阻挡绝缘层上形成栅极导电层。

公开(公告)号：US20090181531A1

公开(公告)日：2009-07-16

申请号：US12346934

申请日：2008-12-31

申请人： Soo-doo Chae ,  Chung-woo Kim ,  Choong-man Lee ,  Yung-hee Lee ,  Chan-jin Park ,  Sung-wook Hwang ,  Jeong-hee Han ,  Do-haing Lee ,  Jin-seok Lee

发明人： Soo-doo Chae ,  Chung-woo Kim ,  Choong-man Lee ,  Yung-hee Lee ,  Chan-jin Park ,  Sung-wook Hwang ,  Jeong-hee Han ,  Do-haing Lee ,  Jin-seok Lee

IPC分类号： H01L21/28

CPC分类号： H01L21/31155 ,  H01L27/11568 ,  H01L29/66833 ,  H01L29/792

摘要： Methods of manufacturing non-volatile memory devices that can reduce or prevent loss of charges stored in a charge storage layer and/or that can improve charge storage capacity by neutral beam irradiation of an insulating layer are disclosed. The methods include forming a tunneling insulating layer on a substrate, forming a charge storage layer on the tunneling insulating layer, forming a blocking insulating layer on the charge storage layer, irradiating the blocking insulating layer and/or the tunneling insulating layer with a neutral beam, and forming a gate conductive layer on the blocking insulating layer.

摘要翻译： 公开了制造可以减少或防止存储在电荷存储层中的电荷损失和/或可通过绝缘层的中性束照射改善电荷存储容量的非易失性存储器件的制造方法。 所述方法包括在衬底上形成隧道绝缘层，在隧道绝缘层上形成电荷存储层，在电荷存储层上形成阻挡绝缘层，用中性光束照射阻挡绝缘层和/或隧道绝缘层 并且在所述阻挡绝缘层上形成栅极导电层。