EBeam inspection method
    1.
    发明授权

    公开(公告)号:US11315237B2

    公开(公告)日:2022-04-26

    申请号:US14952067

    申请日:2015-11-25

    Inventor: Wei Fang

    Abstract: An image is obtained by using a charged particle beam, and a design layout information is generated to select patterns of interest. Grey levels among patterns can be compared with each other to identify abnormal, or grey levels within one pattern can be compared to a determined threshold grey level to identify abnormal.

    Inspection method and system
    4.
    发明授权

    公开(公告)号:US09965844B1

    公开(公告)日:2018-05-08

    申请号:US15250184

    申请日:2016-08-29

    Abstract: An inspection method includes the following steps: identifying a plurality of patterns within an image; and comparing the plurality of patterns with each other for measurement values thereof. The above-mentioned inspection method uses the pattern within the image as a basis for comparison; therefore, measurement values of the plurality of pixels constructing the pattern can be processed with statistical methods and then compared, and the false rate caused by variation of a few pixels is decreased significantly. An inspection system implementing the above-mentioned method is also disclosed.

    Method and system for measuring critical dimension and monitoring fabrication uniformity

    公开(公告)号:US09041795B2

    公开(公告)日:2015-05-26

    申请号:US13785222

    申请日:2013-03-05

    Abstract: A method for measuring critical dimension (CD) includes steps of: scanning at least one area of interest of a die to obtain at least one scanned image; aligning the scanned image to at least one designed layout pattern to identify a plurality of borders within the scanned image; and averaging distances each measured from the border or the plurality of borders of a pattern associated with a specific type of CD corresponding to the designed layout pattern to obtain a value of CD of the die. The value of critical dimensions of dies can be obtained from the scanned image with lower resolution which is obtained by relatively higher scanning speed, so the above-mentioned method can obtain value of CD for every die within entire wafer to monitor the uniformity of the semiconductor manufacturing process within an acceptable inspection time.

    Method and system for measuring critical dimension and monitoring fabrication uniformity

    公开(公告)号:US09282293B2

    公开(公告)日:2016-03-08

    申请号:US13785240

    申请日:2013-03-05

    Abstract: A method for measuring critical dimension (CD) includes steps of: scanning at least one area of interest of a die to obtain at least one scanned image; aligning the scanned image to at least one designed layout pattern to identify a plurality of borders within the scanned image; and averaging distances each measured from the border or the plurality of borders of a pattern associated with a specific type of CD corresponding to the designed layout pattern to obtain a value of CD of the die. The value of critical dimensions of dies can be obtained from the scanned image with lower resolution which is obtained by relatively higher scanning speed, so the above-mentioned method can obtain value of CD for every die within entire wafer to monitor the uniformity of the semiconductor manufacturing process within an acceptable inspection time.

    Inspection method and system
    9.
    发明授权

    公开(公告)号:US10102619B1

    公开(公告)日:2018-10-16

    申请号:US14738791

    申请日:2015-06-12

    Abstract: An inspection method includes the following steps: identifying a plurality of patterns within an image; and comparing the plurality of patterns with each other for measurement values thereof. The above-mentioned inspection method uses the pattern within the image as a basis for comparison; therefore, measurement values of the plurality of pixels constructing the pattern can be processed with statistical methods and then compared, and the false rate caused by variation of a few pixels is decreased significantly. An inspection system implementing the above-mentioned method is also disclosed.

    EBeam Inspection Method
    10.
    发明申请
    EBeam Inspection Method 审中-公开
    EBeam检验方法

    公开(公告)号:US20160314572A1

    公开(公告)日:2016-10-27

    申请号:US14952067

    申请日:2015-11-25

    Inventor: Wei Fang

    Abstract: An image is obtained by using a charged particle beam, and a design layout information is generated to select patterns of interest. Grey levels among patterns can be compared with each other to identify abnormal, or grey levels within one pattern can be compared to a determined threshold grey level to identify abnormal.

    Abstract translation: 通过使用带电粒子束获得图像,并且生成设计布局信息以选择感兴趣的图案。 模式之间的灰度级可以相互比较来识别异常,或者将一个模式内的灰度级别与确定的阈值灰度级进行比较以识别异常。

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