公开(公告)号：US20060022251A1

公开(公告)日：2006-02-02

申请号：US11165034

申请日：2005-06-24

申请人： Hiroyuki Kitamura ,  Yuki Togashi ,  Hiroyasu Kitajima ,  Noriaki Ikeda ,  Yoshitaka Nakamura ,  Eiichiro Kakehashi

发明人： Hiroyuki Kitamura ,  Yuki Togashi ,  Hiroyasu Kitajima ,  Noriaki Ikeda ,  Yoshitaka Nakamura ,  Eiichiro Kakehashi

IPC分类号： H01L29/94 ,  H01L21/20

CPC分类号： H01L28/84 ,  H01L27/10814 ,  H01L27/10852 ,  H01L28/90 ,  Y10S257/905

摘要： A semiconductor device includes cylindrical capacitors each including corresponding cylindrical electrodes. Each cylindrical electrode includes hemispherical silicon grains. The hemispherical silicon grains protruding from an upper region of the cylindrical electrode have a large size, and the hemispherical silicon grains protruding from a lower region of the cylindrical electrode have a small size or the lower region of the cylindrical electrode has no hemispherical silicon grains.

摘要翻译： 半导体器件包括各自包括相应的圆柱形电极的圆柱形电容器。 每个圆柱形电极包括半球形硅晶粒。 从圆柱形电极的上部区域突出的半球形硅晶粒尺寸较大，从圆柱形电极的下部区域突出的半球形硅晶粒尺寸较小，或者圆柱形电极的下部区域没有半球形硅晶粒。

公开(公告)号：US07298002B2

公开(公告)日：2007-11-20

申请号：US11165034

申请日：2005-06-24

申请人： Hiroyuki Kitamura ,  Yuki Togashi ,  Hiroyasu Kitajima ,  Noriaki Ikeda ,  Yoshitaka Nakamura ,  Eiichiro Kakehashi

发明人： Hiroyuki Kitamura ,  Yuki Togashi ,  Hiroyasu Kitajima ,  Noriaki Ikeda ,  Yoshitaka Nakamura ,  Eiichiro Kakehashi

IPC分类号： H01L27/108

CPC分类号： H01L28/84 ,  H01L27/10814 ,  H01L27/10852 ,  H01L28/90 ,  Y10S257/905

摘要： A semiconductor device includes cylindrical capacitors each including corresponding cylindrical electrodes. Each cylindrical electrode includes hemispherical silicon grains. The hemispherical silicon grains protruding from an upper region of the cylindrical electrode have a large size, and the hemispherical silicon grains protruding from a lower region of the cylindrical electrode have a small size or the lower region of the cylindrical electrode has no hemispherical silicon grains.

摘要翻译： 半导体器件包括各自包括相应的圆柱形电极的圆柱形电容器。 每个圆柱形电极包括半球形硅晶粒。 从圆柱形电极的上部区域突出的半球形硅晶粒尺寸较大，从圆柱形电极的下部区域突出的半球形硅晶粒尺寸较小，或者圆柱形电极的下部区域没有半球形硅晶粒。

公开(公告)号：US08188529B2

公开(公告)日：2012-05-29

申请号：US12318735

申请日：2009-01-07

申请人： Yoshitaka Nakamura ,  Kenji Komeda ,  Ryota Suewaka ,  Noriaki Ikeda

发明人： Yoshitaka Nakamura ,  Kenji Komeda ,  Ryota Suewaka ,  Noriaki Ikeda

IPC分类号： H01L27/108

CPC分类号： H01L28/91 ,  H01L27/0207 ,  H01L27/10817 ,  H01L27/10894 ,  H01L29/78

摘要： A semiconductor device comprises a memory cell region, a peripheral circuit region and a boundary region. In the memory cell region, a concave lower electrode and a foundation layer have a same uppermost surface positioned in a height of H above the plane-A. In the boundary region, one concave lower conductive region and a foundation layer have a same uppermost surface positioned in a height of H above the plane-A.

摘要翻译： 半导体器件包括存储单元区域，外围电路区域和边界区域。 在存储单元区域中，凹下电极和基底层具有位于平面A上方的高度H的相同的最上表面。 在边界区域中，一个凹下导电区域和基础层具有位于平面A上方的高度H的相同的最上表面。

公开(公告)号：US20070111434A1

公开(公告)日：2007-05-17

申请号：US11598036

申请日：2006-11-13

申请人： Noriaki Ikeda

发明人： Noriaki Ikeda

IPC分类号： H01L21/8242

CPC分类号： H01L27/10852 ,  H01L27/10814 ,  H01L28/90

摘要： A method for manufacturing a capacitor includes depositing an interlayer insulating film on or above a plug connected to a switching element, forming a hole in the interlayer insulating film such that the opening portion of the hole is surrounded by an overhang structure and that the plug is exposed in the bottom of the hole, removing the overhang structure, forming a lower electrode on the inner surface of the deep hole, forming a dielectric on the lower electrode, and forming an upper electrode on the dielectric. The above steps prevent the formation of a gap in the capacitor, since the overhang structure as a cause of the gap is removed. The coverage by the dielectric is also prevented from being poor.

摘要翻译： 一种制造电容器的方法包括在连接到开关元件的插头上或上方沉积层间绝缘膜，在层间绝缘膜中形成孔，使得孔的开口部分被悬垂结构包围，并且插头是 暴露在孔的底部，去除突出结构，在深孔的内表面上形成下电极，在下电极上形成电介质，并在电介质上形成上电极。 由于作为间隙的原因的突出结构被去除，所以上述步骤防止在电容器中形成间隙。 也可以防止电介质的覆盖不良。

公开(公告)号：US20150249052A1

公开(公告)日：2015-09-03

申请号：US14427440

申请日：2013-09-06

申请人： Noriaki IKEDA

发明人： Noriaki Ikeda

IPC分类号： H01L23/535 ,  H01L27/105

CPC分类号： H01L23/535 ,  H01L27/0207 ,  H01L27/1052 ,  H01L27/10891 ,  H01L27/10894 ,  H01L2924/0002 ,  H01L2924/00

摘要： The semiconductor device according to the present invention comprises: a memory cell region formed on a semiconductor substrate; peripheral circuit regions formed at the periphery of the memory cell region; embedded wiring lines formed embedded in trench portions formed in the semiconductor substrate; and upper wiring lines formed in a layer above the memory cell region and the peripheral circuit regions, and peripheral circuits in the peripheral circuit regions are connected to the upper wiring lines by way of the embedded wiring lines.

摘要翻译： 根据本发明的半导体器件包括：形成在半导体衬底上的存储单元区域; 外围电路区域形成在存储单元区域的周围; 形成在埋设在形成于半导体衬底中的沟槽部分中的嵌入式布线; 以及形成在存储单元区域和外围电路区域之上的层中的上部布线，并且外围电路区域中的外围电路通过嵌入布线连接到上部布线。

公开(公告)号：US20090154661A1

公开(公告)日：2009-06-18

申请号：US12256286

申请日：2008-10-22

申请人： Noriaki Ikeda ,  Nobuhiro Masaki ,  Akira Takahashi ,  Norikuni Noguchi ,  Kazuharu Horiuchi ,  Hiroki Ida ,  Norimasa Niiya

发明人： Noriaki Ikeda ,  Nobuhiro Masaki ,  Akira Takahashi ,  Norikuni Noguchi ,  Kazuharu Horiuchi ,  Hiroki Ida ,  Norimasa Niiya

IPC分类号： H04M1/64

CPC分类号： H04M3/533

摘要： According to one embodiment, a voice mail apparatus includes a first determining module which determines whether a dual tone multi frequency (DTMF) signal for identifying a processing request of the voice message is contained in a received signal by detecting and comparing a first parameter of a transmission signal from the mail box and the first parameter of the received signal to the mail box, a second determining module which determines whether the DTMF signal is contained in the received signal by detecting and comparing a second parameter of the transmission signal from the mail box and the second parameter of the received signal to the mail box, and a controller which controls execution/stop of processing of the voice message based on a determination result by the second determining module.

摘要翻译： 根据一个实施例，语音邮件装置包括：第一确定模块，其通过检测和比较接收信号中的第一参数来确定用于识别语音消息的处理请求的双音多频（DTMF）信号是否包含在接收信号中 来自邮箱的发送信号和接收到的信号的第一参数发送到邮箱;第二确定模块，通过检测并比较来自邮箱的发送信号的第二参数来确定DTMF信号是否包含在接收信号中 以及接收到的信号的第二参数到邮箱，以及控制器，其基于第二确定模块的确定结果控制语音消息的处理的执行/停止。

公开(公告)号：US20080265294A1

公开(公告)日：2008-10-30

申请号：US12213747

申请日：2008-06-24

申请人： Noriaki Ikeda

发明人： Noriaki Ikeda

IPC分类号： H01L23/522 ,  H01L29/78

CPC分类号： H01L23/485 ,  H01L21/28518 ,  H01L21/76814 ,  H01L21/823475 ,  H01L29/78 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention provides a semiconductor device manufacturing method of a semiconductor device having a contact plug, in which a contact hole formed by a surface portion of a high-concentration N-type diffusion layer formed on a semiconductor silicon substrate surface and an interlayer insulating film is implanted with indium ions at an energy ranging from 30 to 120 keV and an implantation amount ranging from 1.0×1013/cm2 to 5.0×1014/cm2 to grow an indium-containing layer on the surface portion of the high-concentration N-type diffusion layer at the bottom of the contact hole.

公开(公告)号：US5213665A

公开(公告)日：1993-05-25

申请号：US717834

申请日：1991-04-08

申请人： Noboru Sugishima ,  Noriaki Ikeda ,  Yasushi Fujii ,  Akira Inoue

发明人： Noboru Sugishima ,  Noriaki Ikeda ,  Yasushi Fujii ,  Akira Inoue

IPC分类号： C07C221/00 ,  C07C225/34 ,  C25B3/04

CPC分类号： C25B3/04 ,  C07C221/00 ,  C07C225/34

摘要： A process for producing 1-aminoanthraquinones represented by formula (C) ##STR1## wherein R.sup.1 and R.sup.2, independently from each other, denote one type selected from a hydrogen atom, an alkyl group having 1 to 4 carbon atoms and a halogen atom,which comprises converting 5-nitro-1,4,4a,9a-tetrahydroanthraquinones represented by formula (A) ##STR2## wherein R.sup.1 and R.sup.2 are as defined above, into 1-hydroxylaminoanthraquinones represented by formula (B) ##STR3## wherein R.sup.1 and R.sup.2 are as defined above, in the presence of a basic compound, and electrolytically reducing the resulting 1-hydroxylaminoanthraquinones in the presence of a basic compound.

摘要翻译： 制备由式（C）表示的1-氨基蒽醌的方法（C）其中R 1和R 2彼此独立地表示选自氢原子，具有1至4个碳原子的烷基和卤素 其包括将由式（A）表示的5-硝基-1,4,4a，9a-四氢蒽醌（A）（其中R 1和R 2如上定义）转化成由式（B）表示的1-羟基氨基蒽醌中 （B）其中R 1和R 2如上定义，在碱性化合物的存在下，在碱性化合物的存在下电解还原所得的1-羟基氨基蒽醌。

公开(公告)号：US08848124B2

公开(公告)日：2014-09-30

申请号：US13431935

申请日：2012-03-27

申请人： Noriaki Ikeda ,  Chihiro Imamura ,  Manabu Ito

发明人： Noriaki Ikeda ,  Chihiro Imamura ,  Manabu Ito

IPC分类号： G02F1/136 ,  H01L29/66 ,  H01L29/417 ,  H01L27/12 ,  G02F1/1368 ,  H01L27/32

CPC分类号： H01L27/3248 ,  G02F1/1368 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/3258 ,  H01L27/3262 ,  H01L29/41733 ,  H01L29/66765

摘要： According to the first aspect of the present invention, a drain electrode and a pixel electrode are electrically connected to each other on a protective film formed on a semiconductor active layer, and thereby it is possible to easily connect the drain electrode and the pixel electrode to each other and to improve a yield.

摘要翻译： 根据本发明的第一方面，漏极电极和像素电极在形成于半导体有源层上的保护膜上彼此电连接，从而可以容易地将漏电极和像素电极连接到 并提高产量。

公开(公告)号：US08487308B2

公开(公告)日：2013-07-16

申请号：US12753781

申请日：2010-04-02

申请人： Noriaki Ikeda ,  Kodai Murata ,  Manabu Ito ,  Chihiro Miyazaki

发明人： Noriaki Ikeda ,  Kodai Murata ,  Manabu Ito ,  Chihiro Miyazaki

IPC分类号： H01L23/04 ,  H01L31/036 ,  H01L27/01 ,  H01L27/12 ,  H01L31/0376

CPC分类号： H01L27/1248 ,  H01L27/1255

摘要： One embodiment of the present invention is a thin film transistor having a substrate, a gate electrode formed on the substrate, a gate insulating film, a semiconductor layer formed on the gate insulating film, a protective film formed on the semiconductor layer and the gate insulating film and having first and second opening sections which are separately and directly formed on the semiconductor layer, a source electrode formed on the protective film and electrically connected to the semiconductor layer at the first opening section of the protective film, and a drain electrode formed on the protective film and electrically connected to the semiconductor layer at the second opening section of the protective film.

摘要翻译： 本发明的一个实施例是一种薄膜晶体管，其具有基板，形成在基板上的栅极电极，栅极绝缘膜，形成在栅极绝缘膜上的半导体层，形成在半导体层上的保护膜和栅极绝缘 膜，并且具有分开且直接形成在半导体层上的第一和第二开口部分，形成在保护膜上并与保护膜的第一开口部分处的半导体层电连接的源电极和形成在保护膜上的漏电极 保护膜，并与保护膜的第二开口部电连接到半导体层。