公开(公告)号：US12051574B2

公开(公告)日：2024-07-30

申请号：US16978911

申请日：2019-12-20

Applicant: Hitachi High-Tech Corporation

Inventor： Hiroyuki Kobayashi ,  Atsushi Sekiguchi ,  Tatehito Usui ,  Soichiro Eto ,  Shigeru Nakamoto ,  Kazunori Shinoda ,  Nobuya Miyoshi

IPC: H01J37/32 ,  H01L21/66

CPC classification number: H01J37/32963 ,  H01J37/3244 ,  H01J37/32651 ,  H01L22/26 ,  H01J2237/24507 ,  H01J2237/334

Abstract: This invention provides a wafer processing method comprising a process of irradiating a wafer to be processed placed on the upper surface of a sample table arranged in a processing chamber with light or electromagnetic waves to heat and remove a compound layer of a film layer that is preliminarily formed on the upper surface of the film layer of the upper surface of the wafer, wherein in the process, by receiving the light or electromagnetic waves reflected by the upper surface of the wafer, a signal indicating a temporal change in intensity using the wavelength of the light or electromagnetic waves as a parameter is corrected using information of the intensity of the light or electromagnetic waves detected by receiving the light or electromagnetic waves at a position on the circumferential side of the upper surface of the sample table.

公开(公告)号：US20230085078A1

公开(公告)日：2023-03-16

申请号：US17477144

申请日：2021-09-16

Applicant: Hitachi High-Tech Corporation

Inventor： Nobuya Miyoshi ,  Nick Pica ,  Takahiro Abe

IPC: H01L21/3213 ,  H01J37/32

Abstract: An etching processing method includes: a step of placing a wafer formed with a titanium nitride film on a wafer stage in a processing chamber inside a vacuum vessel and supplying chlorine radicals to the wafer, thereby forming a modified layer on a surface of the titanium nitride film; and a step of heating the wafer, thereby desorbing and removing the modified layer. The titanium nitride film is etched by repeating the step of forming the modified layer and the step of desorbing and removing the modified layer.

公开(公告)号：US20230118576A1

公开(公告)日：2023-04-20

申请号：US16978911

申请日：2019-12-20

Applicant: Hitachi High-Tech Corporation

Inventor： Hiroyuki Kobayashi ,  Atsushi Sekiguchi ,  Tatehito Usui ,  Soichiro Eto ,  Shigeru Nakamoto ,  Kazunori Shinoda ,  Nobuya Miyoshi

IPC: H01J37/32 ,  H01L21/66

Abstract: This invention provides a wafer processing method comprising a process of irradiating a wafer to be processed placed on the upper surface of a sample table arranged in a processing chamber with light or electromagnetic waves to heat and remove a compound layer of a film layer that is preliminarily formed on the upper surface of the film layer of the upper surface of the wafer, wherein in the process, by receiving the light or electromagnetic waves reflected by the upper surface of the wafer, a signal indicating a temporal change in intensity using the wavelength of the light or electromagnetic waves as a parameter is corrected using information of the intensity of the light or electromagnetic waves detected by receiving the light or electromagnetic waves at a position on the circumferential side of the upper surface of the sample table.

公开(公告)号：US11557463B2

公开(公告)日：2023-01-17

申请号：US17160801

申请日：2021-01-28

Applicant: Hitachi High-Tech Corporation

Inventor： Hiroyuki Kobayashi ,  Nobuya Miyoshi ,  Kazunori Shinoda ,  Kenji Maeda ,  Yutaka Kouzuma ,  Satoshi Sakai ,  Masaru Izawa

IPC: H01J37/32 ,  H01L21/67

Abstract: In a vacuum processing apparatus including: a vacuum container including a processing chamber therein; a plasma formation chamber; plate members being arranged between the processing chamber and the plasma formation chamber; and a lamp and a window member being arranged around the plate members, in order that a wafer and the plate members are heated by electromagnetic waves from the lamp, a bottom surface and a side surface of the window member is formed of a member transmitting the electromagnetic waves therethrough.

公开(公告)号：USD901407S1

公开(公告)日：2020-11-10

申请号：US29677764

申请日：2019-01-23

Applicant: Hitachi High-Tech Corporation

Designer： Yutaka Kouzuma ,  Michiaki Kobayashi ,  Kazuyuki Hirozane ,  Nobuya Miyoshi ,  Kohei Kawamura ,  Hiroyuki Kobayashi

公开(公告)号：US11915951B2

公开(公告)日：2024-02-27

申请号：US16913010

申请日：2020-06-26

Applicant: HITACHI HIGH-TECH CORPORATION

Inventor： Hiroyuki Kobayashi ,  Nobuya Miyoshi ,  Kazunori Shinoda ,  Tatehito Usui ,  Naoyuki Kofuji ,  Yutaka Kouzuma ,  Tomoyuki Watanabe ,  Kenetsu Yokogawa ,  Satoshi Sakai ,  Masaru Izawa

IPC: H01L21/67 ,  H01J37/32 ,  C23C16/48 ,  H01L21/66

CPC classification number: H01L21/67248 ,  C23C16/482 ,  H01J37/3299 ,  H01J37/32449 ,  H01J37/32724 ,  H01J37/32917 ,  H01J37/32935 ,  H01J37/32972 ,  H01L21/67069 ,  H01L21/67098 ,  H01L21/67115 ,  H01L21/67207 ,  H01L22/12 ,  H01L22/20 ,  H01J2237/2001 ,  H01J2237/24585 ,  H01J2237/334

Abstract: A plasma processing apparatus includes a stage disposed in a processing chamber for mounting a wafer, a plasma generation chamber disposed above the processing chamber for plasma generation using process gas, a plate member having multiple introduction holes, made of a dielectric material, disposed above the stage and between the processing chamber and the plasma generation chamber, and a lamp disposed around the plate member for heating the wafer. The plasma processing apparatus further includes an external IR light source, an emission fiber arranged in the stage, that outputs IR light from the external IR light source toward a wafer bottom, and a light collection fiber for collecting IR light from the wafer. Data obtained using only IR light from the lamp is subtracted from data obtained also using IR light from the external IR light source during heating of the wafer. Thus, a wafer temperature is determined.

公开(公告)号：US11276579B2

公开(公告)日：2022-03-15

申请号：US16495366

申请日：2018-11-14

Applicant: HITACHI HIGH-TECH CORPORATION

Inventor： Hiroyuki Kobayashi ,  Nobuya Miyoshi ,  Kazunori Shinoda ,  Yutaka Kouzuma ,  Masaru Izawa

IPC: H01L21/311 ,  H01J37/32 ,  H01L21/02

Abstract: A substrate processing method for reducing a surface roughness of a semiconductor wafer by processing a film structure having at least two types of films beforehand disposed on the substrate, including steps of repeating an adsorption step of supplying activated particles into the processing chamber and allowing the particles to be adsorbed to a surface of a desirable film to be etched in the at least two types of films to allow the particles to combine with a material of the desirable film to form a reaction layer, a removal step of using plasma generated by supplying oxygen into the processing chamber to remove a deposit containing particles adhering to a surface of an undesirable film to be etched in the films, and a desorption step of desorbing and removing the reaction layer on the desirable film to be etched by heating the sample.