公开(公告)号：US20220388908A1

公开(公告)日：2022-12-08

申请号：US17885147

申请日：2022-08-10

Applicant: IDEMITSU KOSAN CO., LTD.

Inventor： Kazuyoshi INOUE ,  Masatoshi SHIBATA ,  Emi KAWASHIMA ,  Yuki TSURUMA ,  Shigekazu TOMAI

IPC: C04B35/01 ,  C23C14/34 ,  H01L27/146 ,  H01L29/786

Abstract: A sintered oxide contains In element, Y element, and Ga element at respective atomic ratios as defined in formulae (1) to (3) below, 0.80≤In/(In+Y+Ga)≤0.96  (1), 0.02≤Y/(In+Y+Ga)≤0.10  (2), and 0.02≤Ga/(In+Y+Ga)≤0.10  (3), and Al element at an atomic ratio as defined in a formula (4) below, 0.005≤Al/(In+Y+Ga+Al)≤0.07  (4), where In, Y, Ga, and Al in the formulae represent the number of atoms of the In element, Y element, Ga element, and Al element in the sintered oxide, respectively.

公开(公告)号：US20210343876A1

公开(公告)日：2021-11-04

申请号：US17264650

申请日：2019-08-01

Applicant: IDEMITSU KOSAN CO.,LTD.

Inventor： Kazuyoshi INOUE ,  Masatoshi SHIBATA ,  Emi KAWASHIMA ,  Kenichi SASAKI ,  Atsushi YAO

IPC: H01L29/786 ,  C23C14/34 ,  C01G15/00

Abstract: A crystalline structure compound A is represented by a composition formula (2) and has having diffraction peaks respectively in below-defined ranges (A) to (K) of an incidence angle observed by X-ray diffraction measurement. (InxGayAlz)2O3  (2) In the formula (2), 0.47≤x≤0.53, 0.17≤y≤0.43, 0.07≤z≤0.33, and x+y+z=1.
31° to 34° (A), 36° to 39° (B), 30° to 32° (C), 51° to 53° (D), 53° to 56° (E), 62° to 66° (F), 9° to 11° (G), 19° to 21° (H), 42° to 45° (I), 8° to 10° (J), and 17° to 19° (K).

公开(公告)号：US20190006473A1

公开(公告)日：2019-01-03

申请号：US16064210

申请日：2016-12-21

Applicant: IDEMITSU KOSAN CO., LTD.

Inventor： Yuki TSURUMA ,  Takashi SEKIYA ,  Shigekazu TOMAI ,  Emi KAWASHIMA ,  Yoshihiro UEOKA

IPC: H01L29/24 ,  H01L29/47 ,  H01L29/872 ,  H01L21/02 ,  H01L29/812

CPC classification number: H01L29/247 ,  H01L21/02381 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/45 ,  H01L29/47 ,  H01L29/812 ,  H01L29/872

Abstract: A semiconductor device 1 which comprises a pair of an ohmic electrode 20 and a Schottky electrode 10 separated from each other, and a semiconductor layer 30 in contact with the ohmic electrode 20 and the Schottky electrode 10, and which satisfies the following formula (I): n

公开(公告)号：US20160197202A1

公开(公告)日：2016-07-07

申请号：US14912815

申请日：2014-08-08

Applicant: IDEMITSU KOSAN CO., LTD.

Inventor： Shigekazu TOMAI ,  Masatoshi SHIBATA ,  Emi KAWASHIMA ,  Koki YANO ,  Hiromi HAYASAKA

IPC: H01L29/872 ,  H01L29/04 ,  H01L29/24

CPC classification number: H01L29/872 ,  H01L29/04 ,  H01L29/24 ,  H01L29/247 ,  H01L29/26 ,  H01L29/47 ,  H01L29/66969 ,  H01L29/861

Abstract: A schottky barrier diode element having a silicon (Si) substrate, an oxide semiconductor layer and a schottky electrode layer, wherein the oxide semiconductor layer includes a polycrystalline and/or amorphous oxide semiconductor having a band gap of 3.0 eV or more and 5.6 eV or less.

Abstract translation: 具有硅（Si）衬底，氧化物半导体层和肖特基电极层的肖特基势垒二极管元件，其中所述氧化物半导体层包括具有3.0eV以上至5.6eV带隙的多晶和/或非晶氧化物半导体， 减。

公开(公告)号：US20250015198A1

公开(公告)日：2025-01-09

申请号：US18894269

申请日：2024-09-24

Applicant: Japan Display Inc. ,  IDEMITSU KOSAN CO., LTD.

Inventor： Hajime WATAKABE ,  Masashi TSUBUKU ,  Toshinari SASAKI ,  Takaya TAMARU ,  Emi KAWASHIMA ,  Yuki TSURUMA ,  Daichi SASAKI

IPC: H01L29/786 ,  C01G15/00 ,  C23C14/08 ,  H01L29/66

Abstract: An oxide semiconductor film having crystallinity over a substrate contains indium (In) and a first metal element (M1). The oxide semiconductor film includes a plurality of crystal grains. Each of the plurality of crystal grains includes at least one of a crystal orientation , a crystal orientation , and a crystal orientation obtained by an electron backscatter diffraction (EBSD) method. In occupancy rates of crystal orientations calculated based on measurement points having crystal orientations with a crystal orientation difference greater than or equal to 0 degrees and less than or equal to 15 degrees with respect to a normal direction of a surface of the substrate, an occupancy rate of the crystal orientation is greater than an occupancy rate of the crystal orientation and an occupancy rate of the crystal orientation .

公开(公告)号：US20220199784A1

公开(公告)日：2022-06-23

申请号：US17598817

申请日：2020-03-26

Applicant: IDEMITSU KOSAN CO., LTD.

Inventor： Emi KAWASHIMA ,  Kazuyoshi INOUE ,  Masashi OYAMA ,  Masatoshi SHIBATA

IPC: H01L29/24 ,  H01L29/04 ,  H01L29/786 ,  H01L29/66

Abstract: A crystalline oxide thin film contains an In element, a Ga element and an Ln element, in which the In element is a main component, the Ln element is at least one element selected from the group consisting of La, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu, and an average crystal grain size D1 is in a range from 0.05 μm to 0.5 μm.

公开(公告)号：US20200266304A1

公开(公告)日：2020-08-20

申请号：US16065239

申请日：2016-12-26

Applicant: IDEMITSU KOSAN CO., LTD.

Inventor： Yoshihiro UEOKA ,  Takashi SEKIYA ,  Shigekazu TOMAI ,  Emi KAWASHIMA ,  Yuki TSURUMA ,  Motohiro TAKESHIMA

IPC: H01L29/872 ,  H01L29/04 ,  H01L29/786

Abstract: A laminated body comprising a substrate, one or more layers selected from a contact resistance reducing layer and a reduction suppressing layer, a Schottky electrode layer and a metal oxide semiconductor layer in this order.

公开(公告)号：US20210309535A1

公开(公告)日：2021-10-07

申请号：US17264622

申请日：2019-08-01

Applicant: IDEMITSU KOSAN CO.,LTD.

Inventor： Kenichi SASAKI ,  Emi KAWASHIMA ,  Kazuyoshi INOUE ,  Masatoshi SHIBATA ,  Atsushi YAO

IPC: C01G15/00

Abstract: A compound includes indium element (In), gallium element (Ga), aluminum element (Al) and oxygen element (O), the compound having a triclinic crystal system with lattice constants being a=10.07±0.15 Å, b=10.45±0.15 Å, c=11.01±0.15 Å, α=111.70±0.50°, β=107.70±0.50° and γ=90.00±0.50°.

公开(公告)号：US20190237556A1

公开(公告)日：2019-08-01

申请号：US16341055

申请日：2017-10-11

Applicant: Idemitsu Kosan Co., Ltd.

Inventor： Yuki TSURUMA ,  Emi KAWASHIMA ,  Yoshikazu NAGASAKI ,  Takashi SEKIYA ,  Yoshihiro UEOKA

IPC: H01L29/47 ,  H01L27/146 ,  H01L29/78 ,  H01L29/812 ,  H01L29/872 ,  H01L31/07 ,  H01L31/108

CPC classification number: H01L29/47 ,  H01L27/146 ,  H01L29/78 ,  H01L29/812 ,  H01L29/872 ,  H01L31/07 ,  H01L31/10 ,  H01L31/108 ,  Y02E10/50

Abstract: A structure including a metal oxide semiconductor layer and a noble metal oxide layer, wherein the metal oxide semiconductor layer and the noble metal oxide layer are adjacent to each other, and a film thickness of the noble metal oxide layer is more than 10 nm.

公开(公告)号：US20190013389A1

公开(公告)日：2019-01-10

申请号：US16065943

申请日：2016-12-26

Applicant: IDEMITSU KOSAN CO., LTD.

Inventor： Emi KAWASHIMA ,  Takashi SEKIYA ,  Yuki TSURUMA ,  Yoshihiro UEOKA ,  Shigekazu TOMAI ,  Motohiro TAKESHIMA

IPC: H01L29/47 ,  H01L29/872 ,  H01L29/868

CPC classification number: H01L29/47 ,  H01L21/28 ,  H01L21/44 ,  H01L29/0619 ,  H01L29/0649 ,  H01L29/24 ,  H01L29/247 ,  H01L29/66143 ,  H01L29/868 ,  H01L29/872

Abstract: A laminated body comprising a substrate, an ohmic electrode layer, a metal oxide semiconductor layer, a Schottky electrode layer and a buffer electrode layer in this order, wherein a reduction suppressing layer is provided between the Schottky electrode layer and the buffer electrode layer.