公开(公告)号：US20180327324A1

公开(公告)日：2018-11-15

申请号：US16040785

申请日：2018-07-20

Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

Inventor： Ta-Ching HSIAO ,  Wen-Po TU ,  Chu-Pi JENG ,  Mu-Hsi SUNG

IPC: C04B35/573 ,  C04B35/626 ,  C04B35/628 ,  C01B32/956 ,  C30B35/00 ,  C30B23/00 ,  C30B29/36

CPC classification number: C04B35/573 ,  C01B32/956 ,  C04B35/6267 ,  C04B35/62675 ,  C04B35/6268 ,  C04B35/62839 ,  C04B35/62897 ,  C04B2235/3418 ,  C04B2235/3826 ,  C04B2235/422 ,  C04B2235/424 ,  C04B2235/428 ,  C04B2235/441 ,  C04B2235/48 ,  C04B2235/5427 ,  C04B2235/5436 ,  C04B2235/656 ,  C04B2235/6567 ,  C04B2235/6584 ,  C30B23/00 ,  C30B29/36 ,  C30B35/007

Abstract: A method for manufacturing micropowder is provided, which includes (a) mixing a silicon precursor and a carbon precursor to form a mixture, and heating and keeping the mixture at 1600° C. to 1800° C. under a vacuum and non-oxygen condition for 120 to 180 minutes to form a silicon carbide powder; and (b) heating and keeping the silicon carbide powder at 1900° C. to 2100° C. under non-oxygen condition for 5 to 15 minutes, and then cooling and keeping the silicon carbide powder at 1800° C. to 2000° C. under the non-oxygen condition for 5 to 15 minutes to form micropowder, wherein the micropowder includes a silicon carbide core covered by a carbon film.

公开(公告)号：US20190176085A1

公开(公告)日：2019-06-13

申请号：US15854375

申请日：2017-12-26

Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

Inventor： Ta-Ching HSIAO ,  Chu-Pi JENG ,  Kuo-Lun HUANG ,  Mu-Hsi SUNG ,  Keng-Yang CHEN ,  Li-Duan TSAI

IPC: B01D53/46 ,  C01B35/02 ,  C01B32/984

Abstract: A method for removing boron is provided, which includes (a) mixing a carbon source material and a silicon source material in a chamber to form a solid state mixture, (b) heating the solid state mixture to a temperature of 1000° C. to 1600° C., and adjusting the pressure of the chamber to 1 torr to 100 torr. The method also includes (c) conducting a gas mixture of a first carrier gas and water vapor into the chamber to remove boron from the solid state mixture, and (d) conducting a second carrier gas into the chamber.

公开(公告)号：US20180134625A1

公开(公告)日：2018-05-17

申请号：US15386749

申请日：2016-12-21

Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

Inventor： Ta-Ching HSIAO ,  Wen-Po TU ,  Chu-Pi JENG ,  Mu-Hsi SUNG

IPC: C04B35/573 ,  C04B35/628 ,  C04B35/626

CPC classification number: C04B35/573 ,  C01B31/36 ,  C01B32/956 ,  C04B35/6267 ,  C04B35/62839 ,  C04B2235/5436 ,  C04B2235/656 ,  C04B2235/6567 ,  C04B2235/6584 ,  C30B23/00 ,  C30B29/36 ,  C30B35/007

Abstract: A method for manufacturing micropowder is provided, which includes (a) mixing a silicon precursor and a carbon precursor to form a mixture, and heating and keeping the mixture at 1600° C. to 1800° C. under a vacuum and non-oxygen condition for 120 to 180 minutes to form a silicon carbide powder; and (b) heating and keeping the silicon carbide powder at 1900° C. to 2100° C. under non-oxygen condition for 5 to 15 minutes, and then cooling and keeping the silicon carbide powder at 1800° C. to 2000° C. under the non-oxygen condition for 5 to 15 minutes to form micropowder, wherein the micropowder includes a silicon carbide core covered by a carbon film.

公开(公告)号：US20220094299A1

公开(公告)日：2022-03-24

申请号：US17134807

申请日：2020-12-28

Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

Inventor： Teng-Yu WANG ,  Chih-Lung LIN ,  Mu-Hsi SUNG ,  Neng-Wen HSIEH ,  Chin-Yueh LI

IPC: H02S30/10 ,  H02S99/00

Abstract: The disclosed embodiments relate to a dismantling device configured for a frame of a PV module. The dismantling device includes a connection portion, a first holding portion, and a second holding portion. The first holding portion is connected to the connection portion and configured to press against one of an inner wall and outer wall of the frame. The second holding portion is slidably disposed on the connection portion and movably closer to or away from the first holding portion along a sliding direction. The second holding portion is configured to press against the other one of the inner wall and the outer wall so as to clamp the frame with the first holding portion and to distort the frame.

公开(公告)号：US20210275965A1

公开(公告)日：2021-09-09

申请号：US17327131

申请日：2021-05-21

Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

Inventor： Ta-Ching HSIAO ,  Chu-Pi JENG ,  Kuo-Lun HUANG ,  Mu-Hsi SUNG ,  Keng-Yang CHEN ,  Li-Duan TSAI

IPC: B01D53/46 ,  C01B32/984 ,  C01B35/02 ,  C01B32/97 ,  C01B32/20 ,  B01J3/00 ,  B01J8/02 ,  B01J8/00

Abstract: A method for removing boron is provided, which includes (a) mixing a carbon source material and a silicon source material in a chamber to form a solid state mixture, (b) heating the solid state mixture to a temperature of 1000° C. to 1600° C., and adjusting the pressure of the chamber to 1 torr to 100 torr. The method also includes (c) conducting a gas mixture of a first carrier gas and water vapor into the chamber to remove boron from the solid state mixture, and (d) conducting a second carrier gas into the chamber.

公开(公告)号：US20210139330A1

公开(公告)日：2021-05-13

申请号：US16729065

申请日：2019-12-27

Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

Inventor： Ta-Ching HSIAO ,  Chu-Pi JENG ,  Mu-Hsi SUNG ,  Kuo-Lun HUANG

IPC: C01B32/05 ,  C01B32/963 ,  C01B32/97

Abstract: A method of purifying silicon carbide powder includes: providing a container with a surface coated by a nitrogen-removal metal layer, wherein the nitrogen-removal metal layer is tantalum, niobium, tungsten, or a combination thereof; putting a silicon carbide powder into the container to contact the nitrogen-removal metal layer; and heating the silicon carbide powder under an inert gas at a pressure of 400 torr to 760 torr at 1700° C. to 2300° C. for 2 to 10 hours, thereby reducing the nitrogen content of the silicon carbide powder.